JP2001118941A5 - - Google Patents
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- Publication number
- JP2001118941A5 JP2001118941A5 JP1999297089A JP29708999A JP2001118941A5 JP 2001118941 A5 JP2001118941 A5 JP 2001118941A5 JP 1999297089 A JP1999297089 A JP 1999297089A JP 29708999 A JP29708999 A JP 29708999A JP 2001118941 A5 JP2001118941 A5 JP 2001118941A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- ferroelectric
- type non
- insulating
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 description 44
- 239000004020 conductor Substances 0.000 description 15
- 239000000758 substrate Substances 0.000 description 12
- 239000010408 film Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000005685 electric field effect Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29708999A JP4459335B2 (ja) | 1999-10-19 | 1999-10-19 | 強誘電体トランジスタ型不揮発性記憶素子とその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29708999A JP4459335B2 (ja) | 1999-10-19 | 1999-10-19 | 強誘電体トランジスタ型不揮発性記憶素子とその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001118941A JP2001118941A (ja) | 2001-04-27 |
| JP2001118941A5 true JP2001118941A5 (https=) | 2006-11-30 |
| JP4459335B2 JP4459335B2 (ja) | 2010-04-28 |
Family
ID=17842071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29708999A Expired - Fee Related JP4459335B2 (ja) | 1999-10-19 | 1999-10-19 | 強誘電体トランジスタ型不揮発性記憶素子とその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4459335B2 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10937887B2 (en) * | 2018-07-06 | 2021-03-02 | Samsung Electronics Co., Ltd. | Semiconductor device |
| CN113871395A (zh) * | 2020-06-30 | 2021-12-31 | 湘潭大学 | 三维铁电场效应晶体管存储单元、存储器及制备方法 |
| US20220102558A1 (en) * | 2020-09-30 | 2022-03-31 | Renesas Electronics Corporation | Semiconductor device |
| JP2023022365A (ja) * | 2021-08-03 | 2023-02-15 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
-
1999
- 1999-10-19 JP JP29708999A patent/JP4459335B2/ja not_active Expired - Fee Related
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