JP4457697B2 - 有機el素子の製造方法 - Google Patents
有機el素子の製造方法 Download PDFInfo
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- JP4457697B2 JP4457697B2 JP2004058518A JP2004058518A JP4457697B2 JP 4457697 B2 JP4457697 B2 JP 4457697B2 JP 2004058518 A JP2004058518 A JP 2004058518A JP 2004058518 A JP2004058518 A JP 2004058518A JP 4457697 B2 JP4457697 B2 JP 4457697B2
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- HEAUFJZALFKPBA-JPQUDPSNSA-N (3s)-3-[[(2s,3r)-2-[[(2s)-6-amino-2-[[(2s)-2-amino-3-(1h-imidazol-5-yl)propanoyl]amino]hexanoyl]amino]-3-hydroxybutanoyl]amino]-4-[[(2s)-1-[[(2s)-1-[[(2s)-1-[[2-[[(2s)-1-[[(2s)-1-amino-4-methylsulfanyl-1-oxobutan-2-yl]amino]-4-methyl-1-oxopentan-2-yl]amin Chemical compound C([C@@H](C(=O)N[C@H](C(=O)NCC(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CCSC)C(N)=O)C(C)C)NC(=O)[C@H](CO)NC(=O)[C@H](CC(O)=O)NC(=O)[C@@H](NC(=O)[C@H](CCCCN)NC(=O)[C@@H](N)CC=1NC=NC=1)[C@@H](C)O)C1=CC=CC=C1 HEAUFJZALFKPBA-JPQUDPSNSA-N 0.000 description 6
- 101800000399 Neurokinin A Proteins 0.000 description 6
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- 229910010272 inorganic material Inorganic materials 0.000 description 6
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- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 239000007850 fluorescent dye Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 229920000620 organic polymer Polymers 0.000 description 3
- 239000002861 polymer material Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- MXVLMYZRJAHEIS-UHFFFAOYSA-N 1-(2-phenylphenyl)naphthalene Chemical compound C1=CC=CC=C1C1=CC=CC=C1C1=CC=CC2=CC=CC=C12 MXVLMYZRJAHEIS-UHFFFAOYSA-N 0.000 description 2
- 229910004541 SiN Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 2
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- 235000010599 Verbascum thapsus Nutrition 0.000 description 1
- 244000178289 Verbascum thapsus Species 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- -1 aluminum quinolinol Chemical compound 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
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- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- 229920003986 novolac Polymers 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
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- Electroluminescent Light Sources (AREA)
Description
ところで、有機EL素子S1において、有機膜30は蒸着法により成膜するものであるが、この蒸着装置の構成として、図6には、2源の蒸発源200を備えたもの、図7には、線状の蒸発源210を備えたもの、図8には、面状の蒸発源を備えたものを模式的に示す。
なお、上記実施形態においては、下部電極が陽極であり、上部電極が陰極であったが、これとは逆に、下部電極が陰極で上部電極が陽極となるような有機EL素子の構成においても、本発明は適用が可能である。
32…正孔輸送層、33…発光層、34…電子輸送層、35…電子注入層、
40…上部電極としての陰極、50…画素、60…絶縁膜、
61…絶縁膜におけるエッジ先端部、100…マスク、101…マスクの開口部、
200…蒸発源、210…線状の蒸発源、
θ…絶縁膜におけるエッジ先端部のテーパ角度。
Claims (3)
- 基板(10)上に、下部電極(20)、発光層(33)を含む有機膜(30)、上部電極(40)が積層されてなる複数個の画素(50)を有するとともに、前記基板(10)上にて各々の前記画素(50)の間に配置された絶縁膜(60)を有する有機EL素子を製造する製造方法において、
前記絶縁膜(60)を、少なくとも1種類以上の無機元素を含む絶縁材料より形成するものであり、
前記下部電極(20)の上に、断面形状が逆テーパ形状をなす開口部(101)を有するレジスト材料からなるマスク(100)を形成し、その上から前記絶縁膜(60)となる絶縁材料を成膜した後、前記開口部(101)に成膜された前記絶縁材料を残して前記マスク(100)を取り去ることにより、前記絶縁膜(60)を形成するものであり、
前記基板(10)上に、前記絶縁膜(60)を形成した後、その表面を研磨することを特徴とする有機EL素子の製造方法。 - 前記有機膜(30)を蒸着法により成膜するものであり、
前記有機膜(30)の成膜は、前記基板(10)が回転する装置を用いて行うことを特徴とする請求項1に記載の有機EL素子の製造方法。 - 前記有機膜(30)の成膜は、前記基板(10)が回転するとともに複数点の蒸着源(200、210)が存在する装置を用いて行うことを特徴とする請求項2に記載の有機EL素子の製造方法。
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JP2004058518A JP4457697B2 (ja) | 2004-03-03 | 2004-03-03 | 有機el素子の製造方法 |
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JP2004058518A JP4457697B2 (ja) | 2004-03-03 | 2004-03-03 | 有機el素子の製造方法 |
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JP2005251497A JP2005251497A (ja) | 2005-09-15 |
JP4457697B2 true JP4457697B2 (ja) | 2010-04-28 |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4480517B2 (ja) * | 2004-08-23 | 2010-06-16 | シャープ株式会社 | 薄膜パターン形成用基板、薄膜パターン形成基板の製造方法及び薄膜パターン形成基板 |
US7719001B2 (en) * | 2006-06-28 | 2010-05-18 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device with metal oxides and an organic compound |
JP6032635B2 (ja) * | 2012-04-25 | 2016-11-30 | タカノ株式会社 | 有機el照明パネルの検査装置 |
JP6076683B2 (ja) * | 2012-10-17 | 2017-02-08 | 株式会社半導体エネルギー研究所 | 発光装置 |
JP6204012B2 (ja) | 2012-10-17 | 2017-09-27 | 株式会社半導体エネルギー研究所 | 発光装置 |
JP5954185B2 (ja) * | 2012-12-04 | 2016-07-20 | 日亜化学工業株式会社 | 半導体素子の製造方法 |
KR101984641B1 (ko) * | 2013-03-29 | 2019-05-31 | 어플라이드 머티어리얼스, 인코포레이티드 | 격리된 디바이스 영역들을 형성하기 위해 패턴으로 임프린팅되는 기판 |
KR20160047673A (ko) | 2014-10-22 | 2016-05-03 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치와, 이의 제조 방법 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3707290B2 (ja) * | 1999-04-06 | 2005-10-19 | 富士電機ホールディングス株式会社 | 有機エレクトロルミネッセンスディスプレイパネルおよびその製造方法 |
JP4470241B2 (ja) * | 1999-08-25 | 2010-06-02 | ソニー株式会社 | 有機elディスプレイ及びその製造方法 |
JP2001351787A (ja) * | 2000-06-07 | 2001-12-21 | Sharp Corp | 有機led素子とその製造方法および有機ledディスプレイ |
JP2002006129A (ja) * | 2000-06-19 | 2002-01-09 | Canon Inc | 光学素子とその製造方法、液晶素子 |
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