JP4434757B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP4434757B2 JP4434757B2 JP2004012822A JP2004012822A JP4434757B2 JP 4434757 B2 JP4434757 B2 JP 4434757B2 JP 2004012822 A JP2004012822 A JP 2004012822A JP 2004012822 A JP2004012822 A JP 2004012822A JP 4434757 B2 JP4434757 B2 JP 4434757B2
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- organic
- sealing member
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- semiconductor device
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- -1 aluminum quinolinol Chemical compound 0.000 description 4
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
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- 239000011368 organic material Substances 0.000 description 2
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- 239000011787 zinc oxide Substances 0.000 description 2
- UHXOHPVVEHBKKT-UHFFFAOYSA-N 1-(2,2-diphenylethenyl)-4-[4-(2,2-diphenylethenyl)phenyl]benzene Chemical compound C=1C=C(C=2C=CC(C=C(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)C=CC=1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 UHXOHPVVEHBKKT-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- NZZFYRREKKOMAT-UHFFFAOYSA-N diiodomethane Chemical compound ICI NZZFYRREKKOMAT-UHFFFAOYSA-N 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
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- 238000007733 ion plating Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
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- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical class C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
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- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 150000003577 thiophenes Chemical class 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical class C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Description
図3は、本発明に係る第1の実施例の有機ELパネル(半導体装置)1の断面を概略的に示す図である。この有機ELパネル1は、絶縁基板10と、この絶縁基板10上に形成される、第1電極層11、有機機能層12および第2電極層13からなる有機EL素子(半導体素子)15とを備えている。前記絶縁基板10は、可視光に対して透明性或いは半透明性を有し、可撓性を持つ厚みを有する。たとえば、絶縁基板10として、ポリカーボネートなどを基材とした可撓性のプラスチック基板を用いればよい。また、有機EL素子15が酸素や水分などの外気に曝されるのを防止し、外部からの衝撃から有機EL素子15を守るべく、有機EL素子15の全体を被覆し封止するように、外気を遮断するための封止部材14が絶縁基板10に接合されている。
図6は、本発明に係る第2の実施例の有機ELパネル(半導体装置)2の断面を概略的に示す図である。なお、図6中、図3に示した符号と同一符号の構成要素は、上記第1の実施例の構成要素と同一の構成および同一の機能を有するものとしてその詳細な説明を省略する。
10 絶縁基板
11 第1電極層
12 有機機能層
13 第2電極層
14,14A,14B 封止部材
14a,14b 接合面
14c 封止部材の内面
15 有機EL素子(半導体素子)
30 被覆層
31 剥離防止層
32,33 水分吸収剤(乾燥剤)
Claims (4)
- 基板と、前記基板上に層状に形成された半導体素子を封止する封止部材とを有する半導体装置であって、前記封止部材の内面の水に対する接触角が、前記封止部材と対面する前記半導体素子の外面の水に対する接触角よりも大きいこと、並びに、前記封止部材は、当該封止部材の外面を形成する被覆層と、当該封止部材の内面を形成する剥離防止層とからなること、前記剥離防止層が多孔性を有し、前記被覆層と前記剥離防止層との間に水分吸収材が設けられていること、前記剥離防止層が多孔性のメッシュ構造を有することを特徴とする半導体装置。
- 請求項1に記載の半導体装置であって、前記基板は可撓性を有することを特徴とする半導体装置。
- 請求項1または請求項2項に記載の半導体装置であって、前記封止部材は可撓性を有することを特徴とする半導体装置。
- 請求項1から請求項3のうちのいずれか1項に記載の半導体装置であって、前記半導体素子がエレクトロルミネッセント素子であることを特徴とする半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004012822A JP4434757B2 (ja) | 2004-01-21 | 2004-01-21 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004012822A JP4434757B2 (ja) | 2004-01-21 | 2004-01-21 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005209430A JP2005209430A (ja) | 2005-08-04 |
JP4434757B2 true JP4434757B2 (ja) | 2010-03-17 |
Family
ID=34899086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004012822A Expired - Fee Related JP4434757B2 (ja) | 2004-01-21 | 2004-01-21 | 半導体装置 |
Country Status (1)
Country | Link |
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JP (1) | JP4434757B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007073504A (ja) * | 2005-08-12 | 2007-03-22 | Pioneer Electronic Corp | 素子体 |
WO2014185025A1 (ja) * | 2013-05-13 | 2014-11-20 | パナソニックIpマネジメント株式会社 | 有機エレクトロルミネッセンス素子 |
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2004
- 2004-01-21 JP JP2004012822A patent/JP4434757B2/ja not_active Expired - Fee Related
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Publication number | Publication date |
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JP2005209430A (ja) | 2005-08-04 |
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