JP4422700B2 - エッチングテープを利用した液晶表示装置用アレイ基板の製造方法 - Google Patents
エッチングテープを利用した液晶表示装置用アレイ基板の製造方法 Download PDFInfo
- Publication number
- JP4422700B2 JP4422700B2 JP2006164456A JP2006164456A JP4422700B2 JP 4422700 B2 JP4422700 B2 JP 4422700B2 JP 2006164456 A JP2006164456 A JP 2006164456A JP 2006164456 A JP2006164456 A JP 2006164456A JP 4422700 B2 JP4422700 B2 JP 4422700B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- forming
- electrode
- liquid crystal
- crystal display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005530 etching Methods 0.000 title claims description 113
- 238000000034 method Methods 0.000 title claims description 47
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 43
- 239000000758 substrate Substances 0.000 title claims description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 239000010410 layer Substances 0.000 claims description 48
- 239000000463 material Substances 0.000 claims description 34
- 239000003990 capacitor Substances 0.000 claims description 19
- 239000011241 protective layer Substances 0.000 claims description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 4
- 229920000298 Cellophane Polymers 0.000 claims description 3
- 229910017855 NH 4 F Inorganic materials 0.000 claims description 3
- 239000002952 polymeric resin Substances 0.000 claims description 3
- 229920003002 synthetic resin Polymers 0.000 claims description 3
- 229920002799 BoPET Polymers 0.000 claims 1
- 239000010408 film Substances 0.000 description 15
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000007769 metal material Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- -1 Poly Ethylene Terephthalate Polymers 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000282412 Homo Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31786—Of polyester [e.g., alkyd, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31855—Of addition polymer from unsaturated monomers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31855—Of addition polymer from unsaturated monomers
- Y10T428/31935—Ester, halide or nitrile of addition polymer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31855—Of addition polymer from unsaturated monomers
- Y10T428/31938—Polymer of monoethylenically unsaturated hydrocarbon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31971—Of carbohydrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electrodes Of Semiconductors (AREA)
Description
Claims (7)
- 透明絶縁基板上にゲート電極、ストレージキャパシターの第1電極及びゲート配線を形成する段階と、
前記ゲート電極上にゲート絶縁膜、アクティブ層、オーミック接触層、ソース電極及びドレーン電極を形成し、前記ストレージキャパシターの第1電極上に誘電体層及びストレージキャパシターの第2電極を形成し、データ配線を形成する段階と、
前記ドレーン電極及び前記ストレージキャパシターの第2電極上に画素電極を形成し、前記ゲート配線上にゲートパッド電極を形成し、前記データ配線上にデータパッド電極を形成する段階と、
前記画素電極、前記ゲートパッド電極及び前記データパッド電極上に保護層を形成する段階と、
前記ゲートパッド電極上に形成された保護層及び前記データパッド電極上に形成された保護層をエッチングテープを利用してエッチングすることでコンタクトホールを形成する段階とを含み、
前記エッチングテープは、ベースシート及び前記ベースシート上にゲルタイプのエッチング物質が塗布されて形成されたエッチング物質層を含む
ことを特徴とする、エッチングテープを利用した液晶表示装置用アレイ基板の製造方法。 - 前記コンタクトホールを形成する段階において、
前記ベースシートは、セロハンフィルム、高分子樹脂フィルムまたはSUSフィルムのいずれか1つ、又はいずれか2つ以上の混合物であることを特徴とする、請求項1記載のエッチングテープを利用した液晶表示装置用アレイ基板の製造方法。 - 前記保護層を形成する段階において、
前記保護層は、窒化シリコンにより形成され、
前記コンタクトホールを形成する段階において、
前記エッチング物質は、前記窒化シリコンをエッチングすることを特徴とする、請求項1記載のエッチングテープを利用した液晶表示装置用アレイ基板の製造方法。 - 前記コンタクトホールを形成する段階において、
前記エッチング物質は、NH 4 FまたはKOHのいずれか1つ、又は混合物であることを特徴とする、請求項3記載のエッチングテープを利用した液晶表示装置用アレイ基板の製造方法。 - 前記コンタクトホールを形成する段階において、
前記ゲートパッド電極上に形成された保護層の上部及び前記データパッド電極上に形成された保護層の上部に前記エッチングテープを1分から60分までの間位置させて前記コンタクトホールを形成することを特徴とする、請求項1記載のエッチングテープを利用した液晶表示装置用アレイ基板の製造方法。 - 前記コンタクトホールを形成する段階において、
前記エッチングテープは、前記エッチング物質層上に位置する保護シートをさらに含むことを特徴とする、請求項1記載のエッチングテープを利用した液晶表示装置用アレイ基板の製造方法。 - 前記コンタクトホールを形成する段階において、
前記保護シートは、PETフィルム、PVCフィルム、PEフィルムまたはPPフィルムのいずれか1つ、又はいずれか2つ以上の混合物であることを特徴とする、請求項6記載のエッチングテープを利用した液晶表示装置用アレイ基板の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050077742A KR101188425B1 (ko) | 2005-08-24 | 2005-08-24 | 식각 테이프 및 이를 이용한 액정 표시 장치용 어레이기판의 제조 방법 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009230824A Division JP5266181B2 (ja) | 2005-08-24 | 2009-10-02 | 液晶表示装置用アレイ基板製造用のエッチングテープ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007059876A JP2007059876A (ja) | 2007-03-08 |
JP4422700B2 true JP4422700B2 (ja) | 2010-02-24 |
Family
ID=37778413
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006164456A Expired - Fee Related JP4422700B2 (ja) | 2005-08-24 | 2006-06-14 | エッチングテープを利用した液晶表示装置用アレイ基板の製造方法 |
JP2009230824A Expired - Fee Related JP5266181B2 (ja) | 2005-08-24 | 2009-10-02 | 液晶表示装置用アレイ基板製造用のエッチングテープ |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009230824A Expired - Fee Related JP5266181B2 (ja) | 2005-08-24 | 2009-10-02 | 液晶表示装置用アレイ基板製造用のエッチングテープ |
Country Status (5)
Country | Link |
---|---|
US (2) | US7498209B2 (ja) |
JP (2) | JP4422700B2 (ja) |
KR (1) | KR101188425B1 (ja) |
CN (1) | CN1920664B (ja) |
TW (1) | TWI299909B (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101188425B1 (ko) * | 2005-08-24 | 2012-10-05 | 엘지디스플레이 주식회사 | 식각 테이프 및 이를 이용한 액정 표시 장치용 어레이기판의 제조 방법 |
US8258511B2 (en) * | 2008-07-02 | 2012-09-04 | Applied Materials, Inc. | Thin film transistors using multiple active channel layers |
TWI395037B (zh) * | 2008-10-13 | 2013-05-01 | Prime View Int Co Ltd | 主動元件陣列基板及其檢測方法 |
CN102832226B (zh) | 2011-10-06 | 2016-06-01 | 友达光电股份有限公司 | 主动元件阵列基板及其制造方法 |
KR101854698B1 (ko) * | 2011-12-02 | 2018-05-08 | 엘지디스플레이 주식회사 | 어레이 기판 및 이의 제조방법 |
JPWO2013161997A1 (ja) * | 2012-04-26 | 2015-12-24 | 国立大学法人大阪大学 | 透明導電基板の製造方法、透明導電基板及び静電容量式タッチパネル |
CN102832254B (zh) * | 2012-09-10 | 2016-04-06 | 京东方科技集团股份有限公司 | 一种阵列基板及其制造方法、显示面板 |
CN103159409A (zh) * | 2013-03-27 | 2013-06-19 | 城步新鼎盛电子科技有限公司 | 一种用于钢化玻璃盖板蚀刻成型的保护层生成方法 |
CN104513982B (zh) * | 2013-09-27 | 2019-01-22 | 东友精细化工有限公司 | 用于液晶显示器的阵列基板的制造方法 |
JP2022023732A (ja) * | 2020-07-27 | 2022-02-08 | 株式会社Screenホールディングス | 基板処理方法、基板処理装置、および、処理液、 |
JP2022023733A (ja) * | 2020-07-27 | 2022-02-08 | 株式会社Screenホールディングス | 基板処理方法、基板処理装置および処理液 |
KR102625065B1 (ko) | 2021-06-30 | 2024-01-15 | 이성환 | Utg 식각용 고정 테이프 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1470772A (en) * | 1922-08-21 | 1923-10-16 | Henry L Greenbaum | Paste for etching glass |
US2067925A (en) * | 1934-03-07 | 1937-01-19 | Clayton-Kennedy Nance | Composition for etching and etching transfers |
US3664913A (en) * | 1968-05-31 | 1972-05-23 | Ralph A Ratciiff | Indicia applying article and method |
JPS531208B2 (ja) * | 1971-09-28 | 1978-01-17 | ||
GB1572032A (en) * | 1977-01-31 | 1980-07-23 | Hoechst Uk Ltd | Gels comprising silica and an aqueous acid |
JPS56133478A (en) * | 1980-03-25 | 1981-10-19 | Nippon Steel Corp | Descaling method for stainless steel |
US4448637A (en) * | 1981-12-28 | 1984-05-15 | Daicel Chemical Industries, Ltd. | Etching method of conductive film |
JPS60226930A (ja) | 1984-04-21 | 1985-11-12 | 川鉄建材工業株式会社 | 金属面処理用シ−ト |
US4552614A (en) * | 1984-06-18 | 1985-11-12 | Beckett Packaging Limited | Demetallizing method and apparatus |
DE9005027U1 (ja) * | 1990-04-18 | 1990-09-20 | Ristau, Harald, 2000 Hamburg, De | |
EP0539973A3 (en) * | 1991-11-01 | 1995-07-12 | Furukawa Electric Co Ltd | A surface-protection method during etching |
JP3173318B2 (ja) * | 1994-04-28 | 2001-06-04 | キヤノン株式会社 | エッチング方法及び半導体素子の製造方法 |
US5688366A (en) * | 1994-04-28 | 1997-11-18 | Canon Kabushiki Kaisha | Etching method, method of producing a semiconductor device, and etchant therefor |
CN1209421A (zh) * | 1997-08-27 | 1999-03-03 | 薛增喜 | 汽车玻璃防盗标识蚀刻剂 |
CN1277944A (zh) * | 1999-06-22 | 2000-12-27 | 杨全月 | 汽车玻璃刻蚀膏及其应用 |
KR100338011B1 (ko) * | 1999-06-30 | 2002-05-24 | 윤종용 | 액정 표시 장치용 기판의 제조 방법 |
US6379573B1 (en) * | 1999-07-13 | 2002-04-30 | University Of Honolulu | Self-limiting isotropic wet etching process |
EP1276701B1 (de) * | 2000-04-28 | 2012-12-05 | Merck Patent GmbH | Ätzpasten für anorganische oberflächen |
US6300234B1 (en) * | 2000-06-26 | 2001-10-09 | Motorola, Inc. | Process for forming an electrical device |
DE10104726A1 (de) * | 2001-02-02 | 2002-08-08 | Siemens Solar Gmbh | Verfahren zur Strukturierung einer auf einem Trägermaterial aufgebrachten Oxidschicht |
JP4520075B2 (ja) * | 2001-06-25 | 2010-08-04 | 博 三輪 | サンドブラスト加工を施したガラス製品の表面加工法 |
DE10150040A1 (de) * | 2001-10-10 | 2003-04-17 | Merck Patent Gmbh | Kombinierte Ätz- und Dotiermedien |
EP1378947A1 (en) * | 2002-07-01 | 2004-01-07 | Interuniversitair Microelektronica Centrum Vzw | Semiconductor etching paste and the use thereof for localised etching of semiconductor substrates |
DE10241300A1 (de) * | 2002-09-04 | 2004-03-18 | Merck Patent Gmbh | Ätzpasten für Siliziumoberflächen und -schichten |
JP2004143530A (ja) * | 2002-10-24 | 2004-05-20 | Ekusebun:Kk | 金属表面洗浄剤 |
US20060151434A1 (en) * | 2005-01-07 | 2006-07-13 | The Boc Group, Inc. | Selective surface texturing through the use of random application of thixotropic etching agents |
KR101188425B1 (ko) * | 2005-08-24 | 2012-10-05 | 엘지디스플레이 주식회사 | 식각 테이프 및 이를 이용한 액정 표시 장치용 어레이기판의 제조 방법 |
-
2005
- 2005-08-24 KR KR1020050077742A patent/KR101188425B1/ko active IP Right Grant
-
2006
- 2006-06-07 TW TW95120287A patent/TWI299909B/zh not_active IP Right Cessation
- 2006-06-12 CN CN2006100915561A patent/CN1920664B/zh active Active
- 2006-06-14 JP JP2006164456A patent/JP4422700B2/ja not_active Expired - Fee Related
- 2006-06-20 US US11/455,715 patent/US7498209B2/en not_active Expired - Fee Related
-
2009
- 2009-01-16 US US12/320,126 patent/US7923118B2/en not_active Expired - Fee Related
- 2009-10-02 JP JP2009230824A patent/JP5266181B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2007059876A (ja) | 2007-03-08 |
JP2010016401A (ja) | 2010-01-21 |
CN1920664B (zh) | 2012-07-04 |
KR20070023297A (ko) | 2007-02-28 |
KR101188425B1 (ko) | 2012-10-05 |
TW200709425A (en) | 2007-03-01 |
US20070048911A1 (en) | 2007-03-01 |
CN1920664A (zh) | 2007-02-28 |
US7498209B2 (en) | 2009-03-03 |
TWI299909B (en) | 2008-08-11 |
JP5266181B2 (ja) | 2013-08-21 |
US7923118B2 (en) | 2011-04-12 |
US20090136772A1 (en) | 2009-05-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4422700B2 (ja) | エッチングテープを利用した液晶表示装置用アレイ基板の製造方法 | |
US9508747B2 (en) | Thin film transistor array substrate | |
JP5847061B2 (ja) | アレイ基板及びその製造方法 | |
US7714963B2 (en) | Transflective liquid crystal display device and method of fabricating the same | |
JP6223987B2 (ja) | 表示装置、薄膜トランジスター、アレイ基板及びその製造方法 | |
US20070057260A1 (en) | Transflective liquid crystal display device and method of fabricating the same | |
US9142653B2 (en) | Method for manufacturing thin-film transistor array substrate | |
US10784287B2 (en) | TFT substrate and manufacturing method thereof | |
KR20150102133A (ko) | 표시 패널, 이를 포함하는 표시 장치 및 이의 제조 방법 | |
US20150162354A1 (en) | Thin film transistor substrate and method of manufacturing a thin film transistor substrate | |
CN113629085B (zh) | 显示面板及其制备方法 | |
KR100511353B1 (ko) | 액정표시소자의 제조방법 및 이 방법에 의한 액정표시소자 | |
KR101087242B1 (ko) | 액정 표시 장치용 박막 트랜지스터 소자 및 그의 제조 방법 | |
KR101197765B1 (ko) | 박막 트랜지스터 어레이 기판의 제조 방법 | |
KR101057235B1 (ko) | 에천트 및 이를 이용한 박막 트랜지스터의 제조 방법 | |
KR101258256B1 (ko) | 액정 표시 장치용 어레이 기판의 제조 방법 | |
KR101043679B1 (ko) | 평판표시소자의 제조방법 | |
KR20040066268A (ko) | 어레이 기판의 제조방법 | |
KR20070072151A (ko) | 박막 트랜지스터 어레이 기판의 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20090213 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090217 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090512 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20090602 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091002 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20091021 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20091124 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20091204 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121211 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4422700 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131211 Year of fee payment: 4 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |