CN1920664B - 蚀刻带及使用该蚀刻带制造液晶显示器的阵列基板的方法 - Google Patents

蚀刻带及使用该蚀刻带制造液晶显示器的阵列基板的方法 Download PDF

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CN1920664B
CN1920664B CN2006100915561A CN200610091556A CN1920664B CN 1920664 B CN1920664 B CN 1920664B CN 2006100915561 A CN2006100915561 A CN 2006100915561A CN 200610091556 A CN200610091556 A CN 200610091556A CN 1920664 B CN1920664 B CN 1920664B
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吴载暎
金秀浦
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Abstract

提供了一种蚀刻带和使用该蚀刻带来制造液晶显示器(LCD)阵列基板的方法。该蚀刻带包括：基片；和蚀刻材料层，位于所述基片上并涂覆有凝胶型蚀刻材料。使用该蚀刻带来制造LCD阵列基板的方法包括以下步骤：在透明绝缘基板上形成栅极、存储电容器的第一电极和选通布线；形成栅极绝缘层、有源层、欧姆接触层、源极和漏极，形成电介质层、所述存储电容器的第二电极，以及数据布线；形成像素电极、选通焊盘电极和数据焊盘电极；形成保护层；以及使用蚀刻带对形成在所述选通焊盘电极上的保护层和形成在所述数据焊盘电极上的保护层进行蚀刻以形成接触孔。

Description

蚀刻带及使用该蚀刻带制造液晶显示器的阵列基板的方法
技术领域
本发明涉及蚀刻带和使用该蚀刻带来制造液晶显示器(LCD)的阵列基板的方法，更具体地，涉及一种下述的蚀刻带和一种使用该蚀刻带来制造LCD的阵列基板的方法，该蚀刻带涂覆有凝胶型蚀刻材料从而能够以低成本容易地执行蚀刻工艺。
背景技术
在当今面向信息的社会中，电子显示器所起的作用很重要并且各种电子显示器被广泛用于工业。随着电子显示器的发展，不断开发出具有适应面向信息的社会的各种需求的新功能的电子显示器。通常，电子显示器通过视觉向人类传送各种信息项。即，电子显示器将从各种电子设备输出的电子信息信号改变为可以由人类视觉感知的光信息信号，从而使人类和电子设备彼此关联。
电子显示器在通过发光(emission)来显示光信息信号时被称为发光型显示器，而在通过由反射、散射和干涉进行的光学调制来显示光信息信号时被称为光接收型显示器。被称为有源显示器的发光型显示器包括阴极射线管(CRT)、等离子体显示板(PDP)、有机电致发光显示器(OELD)和发光二极管(LED)。被称为无源显示器的光接收型显示器包括液晶显示器(LCD)和电泳影像显示器(EPID)。
CRT用于电视和计算机监视器的时间最长，其由于经济效率而具有最大的市场份额。然而，CRT存在例如重量大、体积大和功耗大的缺点。
近来，随着半导体技术的快速发展，根据各种电子设备趋于变得更小、更薄且更轻，并且各种电子设备的电压和功耗降低，对作为适合新环境的电子显示器的平板显示器(FPD)的需求迅速增长。因此，开发出了诸如LCD、PDP和OELD的FPD，在这些FPD当中，可以容易地制成较小、轻且薄并且具有低功耗和低驱动电压的LCD成为关注的焦点。
在LCD中，将具有各向异性介电常数的液晶材料注入在其上形成有公共电极、滤色器和黑底的滤色器基板与其上形成有开关器件和像素电极的阵列基板之间，并且向像素电极和公共电极施加不同的电势，以对形成在液晶材料中的电场的强度进行控制从而改变液晶材料的分子的排列，以控制穿过阵列基板的光的量，由此显示所期望的图像。主要使用其中使用薄膜晶体管(TFT)器件作为开关器件的TFT LCD作为LCD。
传统的LCD阵列基板是通过使用四个掩模的四道光刻和蚀刻工艺或者通过使用五个掩模的五道光刻和蚀刻工艺制得的。
由于使用掩模的光刻工艺在制造传统的LCD阵列基板所需的时间和成本方面占去一大部分，因此为了有效地减少制造LCD阵列基板所需的时间和成本，需要一种能够减少使用掩模的光刻工艺的制造LCD阵列基板的方法。
发明内容
因此，本发明的目的是至少解决现有技术的这些问题和缺点。
本发明的一个目的是提供一种蚀刻带，通过该蚀刻带能够以低成本容易地执行蚀刻工艺，通过使用涂覆有凝胶型蚀刻材料的该蚀刻带执行蚀刻工艺，就无需执行使用掩模的光刻工艺。
本发明的另一目的是提供一种使用这种蚀刻带来制造液晶显示器(LCD)的方法。
本发明要实现的目的并不限于上述目的，本领域技术人员通过以下描述将容易理解未提及的其他目的。
为了实现上述目的，根据本发明实施例的蚀刻带包括：基片；以及蚀刻材料层，其位于所述基片上并涂覆有凝胶型蚀刻材料。
根据本发明实施例的蚀刻带优选地还包括位于所述蚀刻材料层上的保护片。
根据本发明实施例的蚀刻带优选地是聚对苯二甲酸乙二醇酯(PET)膜、聚氯乙稀(PVC)膜、聚乙烯(PE)膜或聚丙烯(PP)膜。
在根据本发明实施例的蚀刻带中，所述基片优选地是玻璃纸膜、聚合物树脂膜或不锈钢(steel use stainless，SUS)膜。
另外，在根据本发明实施例的蚀刻带中，所述蚀刻材料优选地蚀刻SiNx。
另外，在根据本发明实施例的蚀刻带中，所述蚀刻材料优选地是NH4HF或KOH。
为了实现本发明的另一目的，使用根据本发明实施例的蚀刻带来制造液晶显示器(LCD)阵列基板的方法包括以下步骤：在透明绝缘基板上形成栅极、存储电容器的第一电极和选通布线；在所述栅极上形成栅极绝缘层、有源层、欧姆接触层、源极和漏极，在所述存储电容器的第一电极上形成电介质层和所述存储电容器的第二电极，并形成数据布线；在所述漏极和所述存储电容器的第二电极上形成像素电极，在所述选通布线上形成选通焊盘电极，并在所述数据布线上形成数据焊盘电极；在所得到的材料上形成保护层；以及使用蚀刻带对形成在所述选通焊盘电极上的保护层和形成在所述数据焊盘电极上的保护层进行蚀刻以形成接触孔。
在使用根据本发明实施例的蚀刻带来制造液晶显示器(LCD)阵列基板的方法中，在形成接触孔的步骤中，所述蚀刻带优选地包括：基片；以及蚀刻材料层，其位于所述基片上并涂覆有凝胶型蚀刻材料。
另外，在使用根据本发明实施例的蚀刻带来制造液晶显示器(LCD)阵列基板的方法中，在形成接触孔的步骤中，所述基片优选地是玻璃纸膜、聚合物树脂膜或不锈钢(SUS)膜。
另外，在使用根据本发明实施例的蚀刻带来制造液晶显示器(LCD)阵列基板的方法中，在形成保护层的步骤中，所述保护层优选地由SiNx形成，并且在形成接触孔的步骤中，所述蚀刻材料优选地蚀刻SiNx。
另外，在使用根据本发明实施例的蚀刻带来制造液晶显示器(LCD)阵列基板的方法中，在形成接触孔的步骤中，所述蚀刻材料优选地是NH4HF或KOH。
另外，在使用根据本发明实施例的蚀刻带来制造液晶显示器(LCD)阵列基板的方法中，在形成接触孔的步骤中，所述蚀刻带优选地设置在形成于所述选通焊盘电极上的保护层上和形成于所述数据焊盘电极上的保护层上1至60分钟，以形成所述接触孔。
另外，在使用根据本发明实施例的蚀刻带来制造液晶显示器(LCD)阵列基板的方法中，在形成接触孔的步骤中，所述蚀刻带优选地还包括位于所述蚀刻材料层上的保护片。
另外，在使用根据本发明实施例的蚀刻带来制造液晶显示器(LCD)阵列基板的方法中，在形成接触孔的步骤中，所述保护片优选地是聚对苯二甲酸乙二醇酯(PET)膜、聚氯乙稀(PVC)膜、聚乙烯(PE)膜或聚丙烯(PP)膜。
在以下对优选实施例的详细描述和附图的简要描述中将对其他实施例进行详细描述。
附图说明
图1是根据本发明实施例的蚀刻带的剖面图。
图2示出了其中使用根据本发明实施例的蚀刻带来执行蚀刻工艺的示例。
图3示出了液晶显示器(LCD)阵列基板的平面结构的示例，用于描述使用根据本发明实施例的蚀刻带来制造LCD阵列基板的方法。
图4A至图4G是表示使用根据本发明实施例的蚀刻带来制造LCD阵列基板的工艺的剖面图。
具体实施方式
下面将参照详细描述的本发明的优选实施例以及附图来详细描述本发明的优点和特征以及实现这些优点和特征的方法。在说明书中，相同的标号表示相同的元件。
下面将参照图1来描述根据本发明实施例的蚀刻带。图1是根据本发明实施例的蚀刻带的剖面图。
如图1所示，根据本发明实施例的蚀刻带100包括基片110、蚀刻材料层120和保护片130。
由于涂覆有凝胶型蚀刻材料的蚀刻材料层120被设置在基片110上，因此基片110可以由化学稳定且可以有效地涂覆凝胶型蚀刻材料的玻璃纸膜、聚合物树脂膜，或者不锈钢(SUS)膜制成。
由于设置在基片110上的蚀刻材料层120涂覆有凝胶型蚀刻材料并被设置在待蚀刻区域上，从而可以对待蚀刻区域进行有效的蚀刻，而凝胶型蚀刻材料不会影响待蚀刻区域之外的区域，因此可以有效地执行蚀刻工艺，而无需使用掩模执行光刻工艺。可以通过蚀刻材料层120在其上执行蚀刻工艺的材料例如是SiNx。因此，可以施加用于蚀刻SiNx的蚀刻材料以形成蚀刻材料层120。这里，可以使用NH4HF或KOH作为用于蚀刻SiNx的蚀刻材料。
保护片130设置在蚀刻材料层120上以防止凝胶型蚀刻材料层120与外部接触(connect)。因此，在执行蚀刻工艺时，去除保护片130以使得蚀刻材料层120直接设置在待蚀刻区域上从而执行蚀刻工艺。保护片130可以由聚对苯二甲酸乙二醇酯(PET)膜、聚氯乙稀(PVC)膜、聚乙烯(PE)膜或聚丙烯(PP)膜制成。
下面将参照图2来描述使用根据本发明实施例的蚀刻带来执行蚀刻工艺的方法。图2示出了使用根据本发明实施例的蚀刻带来执行蚀刻工艺的示例。
如图2所示，首先去除蚀刻带100的保护片130以使蚀刻材料层120直接设置在材料层200上的待蚀刻区域210上。这里，为了对区域210进行充分蚀刻，将蚀刻带100的蚀刻材料层120放置1至60分钟。
接着，去除蚀刻带100并使用去离子水(DI)清洗残留的蚀刻材料。然后，使用气刀来吹干DI。
当使用根据本发明实施例的蚀刻带100来执行蚀刻工艺时，由于蚀刻带100被直接设置在待蚀刻的区域210上来执行蚀刻工艺，从而不必使用附加掩模来执行光刻工艺，因此可以有效地减少蚀刻工艺所需的时间和成本。
下面将参照图3、图4A至图4G详细地描述使用根据本发明实施例的蚀刻带来制造液晶显示器(LCD)阵列基板的方法。图3示出了液晶显示器(LCD)阵列基板的平面结构的示例，用于描述使用根据本发明实施例的蚀刻带来制造LCD阵列基板的方法。图4A至图4G是表示使用根据本发明实施例的蚀刻带来制造LCD阵列基板的工艺的剖面图。
参照图3，在透明绝缘基板300上以矩阵形式设置有选通布线311和数据布线351。在选通布线311的一端上形成有选通焊盘(gate pad)，在数据布线351的一端上形成有数据焊盘。在选通布线311和数据布线351的交叉处形成有包括栅极312、有源层332、源极352和漏极353的薄膜晶体管(TFT)。在选通布线311上形成有包括存储电容器电极354的存储电容器。在使用根据本发明实施例的蚀刻带来制造LCD阵列基板的方法中，可以使用蚀刻带101、102来形成选通焊盘和数据焊盘。
首先，在透明绝缘基板300上淀积包括铝或铜的金属材料，并执行蚀刻工艺和使用第一掩模的光刻工艺，以对金属材料进行构图。结果，如图4A所示，在选通焊盘区域中形成了选通布线311，在TFT区域中形成了栅极312，并在存储电容器区域中形成了存储电容器的第一电极313。
接下来，如图4B所示，在所得到的材料上依次淀积诸如SiNx的绝缘层320、非晶硅层330、掺有杂质的非晶硅层340，以及包括铬或钼的金属材料层350，并且通过使用第二掩模的光刻工艺以及使用光刻胶图案361、362和363的蚀刻工艺来对这些层进行构图。结果，如图4C所示，在数据焊盘区域中形成了绝缘层321、半导体层331和341以及数据布线351，在TFT区域中的栅极312上形成了栅极绝缘层322、有源层332、欧姆接触层342和343、源极352以及漏极353，并且在存储电容器区域中的存储电容器的第一电极313上形成了电介质层323、333和344以及存储电容器的第二电极354。这里，使用衍射(半色调)掩模形成光刻胶图案362，并且可以使用光刻胶图案362同时形成栅极绝缘层322、有源层332、欧姆接触层342和343、源极352以及漏极353。栅极绝缘层322、有源层332、欧姆接触层342和343、源极352以及漏极353不是必须形成的，并且可以在没有使用衍射(半色调)掩模时在多道工艺中形成。
接下来，在所得到的材料上淀积诸如铟锡氧化物(ITO)或铟锌氧化物(IZO)的透明导电材料，并且通过蚀刻工艺以及使用第三掩模的光刻工艺对该透明导电材料进行构图。结果，在数据焊盘区域中的数据布线351上形成了焊盘电极，在选通焊盘区域中的选通布线311上形成了选通焊盘电极372，并且在TFT区域中的漏极353上和存储电容器区域中的存储电容器的第二电极354上形成了像素电极373。
接下来，如图4E所示，在所得到的材料上淀积SiNx以形成保护层380。
接下来，如图4F所示，使用蚀刻带对形成在数据焊盘区域的数据焊盘电极371上的保护层380和形成在选通焊盘区域的选通焊盘电极372上的保护层380进行蚀刻。即，将蚀刻带101和102设置在形成于数据焊盘区域中的数据焊盘电极371上的保护层380和形成于选通焊盘区域中的选通焊盘电极372上的保护层380上1至60分钟。
这里，每个蚀刻带101和102都包括如上所述的基片和蚀刻材料层，所述基片可以由玻璃纸膜、聚合物树脂膜或不锈钢(SUS)膜制成，蚀刻材料层的蚀刻材料蚀刻SiNx，并且具体地可由NH4HF或KOH制成。
接下来，去除蚀刻带101和102并使用去离子水(DI)清洗残留的蚀刻材料。然后，使用气刀来吹干DI。结果，如图4G所示，去除了形成在数据焊盘区域中的数据焊盘电极371上的保护层380和形成在选通焊盘区域中的选通焊盘电极372上的保护层380，从而形成了接触孔381和382。
在使用根据本发明实施例的蚀刻带来制造LCD阵列基板的方法中，由于蚀刻带101和102被直接设置在待蚀刻区域上来执行蚀刻工艺，从而不必使用附加掩模来执行光刻工艺，因此可以有效地减少制造LCD阵列基板所需的时间和成本。
尽管已参照本发明的优选实施例具体示出和描述了本发明，但是本领域技术人员应理解，可以在不脱离由所附权利要求限定的本发明的精神和范围的情况下对本发明进行形式上和细节上的各种改变。
因此，本发明不应被理解为限于此处阐述的实施例，提供这些实施例是为了使得本公开彻底且完全，并且能向本领域技术人员完全传达本发明的概念。
当使用根据本发明实施例的上述蚀刻带来执行蚀刻工艺时，由于蚀刻带被直接设置在待蚀刻区域上来进行蚀刻处理，从而不必使用附加掩模来执行光刻工艺，因此可以有效地减少蚀刻工艺所需的时间和成本。
而且，在使用根据本发明实施例的蚀刻带来制造LCD阵列基板的方法中，使用上述蚀刻带来执行蚀刻工艺，从而可以有效地减少制造LCD阵列基板所需的时间和成本。

Claims (13)

1.一种用于数据焊盘区域或选通焊盘区域的蚀刻带，包括：
基片；和
蚀刻材料层，位于所述基片上并涂覆有凝胶型蚀刻材料。
2.根据权利要求1所述的用于数据焊盘区域或选通焊盘区域的蚀刻带，还包括位于所述蚀刻材料层上的保护片。
3.根据权利要求2所述的用于数据焊盘区域或选通焊盘区域的蚀刻带，其中，所述保护片是聚对苯二甲酸乙二醇酯膜、聚氯乙稀膜、聚乙烯膜或聚丙烯膜。
4.根据权利要求1所述的用于数据焊盘区域或选通焊盘区域的蚀刻带，其中，所述基片是玻璃纸膜、聚合物树脂膜或不锈钢膜。
5.根据权利要求1所述的用于数据焊盘区域或选通焊盘区域的蚀刻带，其中，所述蚀刻材料是蚀刻SiNx的蚀刻材料。
6.根据权利要求5所述的用于数据焊盘区域或选通焊盘区域的蚀刻带，其中，所述蚀刻材料是NH4HF或KOH。
7.一种使用蚀刻带来制造液晶显示器阵列基板的方法，该方法包括以下步骤：
在透明绝缘基板上形成栅极、存储电容器的第一电极，以及选通布线；
在所述栅极上形成栅极绝缘层、有源层、欧姆接触层、源极和漏极，在所述存储电容器的第一电极上形成电介质层和所述存储电容器的第二电极，并形成数据布线；
在所述漏极和所述存储电容器的第二电极上形成像素电极，在所述选通布线上形成选通焊盘电极，并在所述数据布线上形成数据焊盘电极；
在所得到的材料上形成保护层；以及
使用蚀刻带对形成在所述选通焊盘电极上的保护层和形成在所述数据焊盘电极上的保护层进行蚀刻，以形成接触孔，
其中所述蚀刻带包括：基片；和蚀刻材料层，位于所述基片上并涂覆有凝胶型蚀刻材料。
8.根据权利要求7所述的方法，其中，在形成所述接触孔的步骤中，所述基片是玻璃纸膜、聚合物树脂膜或不锈钢膜。
9.根据权利要求7所述的方法，
其中，在形成所述保护层的步骤中，所述保护层由SiNx形成，并且
其中，在形成所述接触孔的步骤中，所述蚀刻材料蚀刻SiNx。
10.根据权利要求9所述的方法，其中，在形成所述接触孔的步骤中，所述蚀刻材料是NH4HF或KOH。
11.根据权利要求7所述的方法，其中，在形成所述接触孔的步骤中，将所述蚀刻带设置在形成于所述选通焊盘电极上的保护层和形成于所述数据焊盘电极上的保护层上1至60分钟，以形成所述接触孔。
12.根据权利要求7所述的方法，其中，在形成所述接触孔的步骤中，所述蚀刻带还包括位于所述蚀刻材料层上的保护片。
13.根据权利要求12所述的方法，其中，在形成所述接触孔的步骤中，所述保护片是聚对苯二甲酸乙二醇酯膜、聚氯乙稀膜、聚乙烯膜或聚丙烯膜。
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KR20070023297A (ko) 2007-02-28
JP2010016401A (ja) 2010-01-21
US20090136772A1 (en) 2009-05-28
US7923118B2 (en) 2011-04-12
JP4422700B2 (ja) 2010-02-24
US7498209B2 (en) 2009-03-03
JP2007059876A (ja) 2007-03-08
TW200709425A (en) 2007-03-01
JP5266181B2 (ja) 2013-08-21
KR101188425B1 (ko) 2012-10-05

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