JP4409840B2 - 加工対象物切断方法 - Google Patents

加工対象物切断方法 Download PDF

Info

Publication number
JP4409840B2
JP4409840B2 JP2003060324A JP2003060324A JP4409840B2 JP 4409840 B2 JP4409840 B2 JP 4409840B2 JP 2003060324 A JP2003060324 A JP 2003060324A JP 2003060324 A JP2003060324 A JP 2003060324A JP 4409840 B2 JP4409840 B2 JP 4409840B2
Authority
JP
Japan
Prior art keywords
cutting
workpiece
substrate
region
processed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2003060324A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003334675A5 (enExample
JP2003334675A (ja
Inventor
文嗣 福世
憲志 福満
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to JP2003060324A priority Critical patent/JP4409840B2/ja
Publication of JP2003334675A publication Critical patent/JP2003334675A/ja
Publication of JP2003334675A5 publication Critical patent/JP2003334675A5/ja
Application granted granted Critical
Publication of JP4409840B2 publication Critical patent/JP4409840B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Laser Beam Processing (AREA)
JP2003060324A 2002-03-12 2003-03-06 加工対象物切断方法 Expired - Lifetime JP4409840B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003060324A JP4409840B2 (ja) 2002-03-12 2003-03-06 加工対象物切断方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002067372 2002-03-12
JP2002-67372 2002-03-12
JP2003060324A JP4409840B2 (ja) 2002-03-12 2003-03-06 加工対象物切断方法

Publications (3)

Publication Number Publication Date
JP2003334675A JP2003334675A (ja) 2003-11-25
JP2003334675A5 JP2003334675A5 (enExample) 2006-04-20
JP4409840B2 true JP4409840B2 (ja) 2010-02-03

Family

ID=29714042

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003060324A Expired - Lifetime JP4409840B2 (ja) 2002-03-12 2003-03-06 加工対象物切断方法

Country Status (1)

Country Link
JP (1) JP4409840B2 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8870047B2 (en) 2011-02-01 2014-10-28 Samsung Electronics Co., Ltd. Wafer dicing press and method and semiconductor wafer dicing system including the same
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005268752A (ja) 2004-02-19 2005-09-29 Canon Inc レーザ割断方法、被割断部材および半導体素子チップ
JP4515790B2 (ja) 2004-03-08 2010-08-04 株式会社東芝 半導体装置の製造方法及びその製造装置
JP4631044B2 (ja) * 2004-05-26 2011-02-16 国立大学法人北海道大学 レーザ加工方法および装置
CN101434010B (zh) * 2004-08-06 2011-04-13 浜松光子学株式会社 激光加工方法及半导体装置
JP2007141998A (ja) * 2005-11-16 2007-06-07 Denso Corp 半導体チップの製造装置及び半導体チップの製造方法
JP2010239005A (ja) * 2009-03-31 2010-10-21 Kinki Univ 裏面照射型撮像素子の製造方法、その製造方法により製造された裏面照射型撮像素子及びそれを備えた撮像装置
JP5992256B2 (ja) * 2012-08-24 2016-09-14 株式会社ディスコ ウェーハの分割方法
JP6428113B2 (ja) * 2014-09-30 2018-11-28 三星ダイヤモンド工業株式会社 パターニング基板のブレイク方法並びにブレイク装置
JP6428112B2 (ja) * 2014-09-30 2018-11-28 三星ダイヤモンド工業株式会社 パターニング基板のブレイク装置
JP6417828B2 (ja) * 2014-09-30 2018-11-07 三星ダイヤモンド工業株式会社 パターニング基板のブレイク方法並びにブレイク装置
JP2018085368A (ja) * 2016-11-21 2018-05-31 日本特殊陶業株式会社 蓋部材、該蓋部材を用いた発光装置、およびこれらの製造方法
KR101960267B1 (ko) * 2017-05-12 2019-03-21 (주)제이스텍 플렉시블 디스플레이 벤딩을 위한 필름 박리방법
US12202759B2 (en) 2018-02-26 2025-01-21 Corning Incorporated Methods for laser forming transparent articles from a transparent mother sheet and processing the transparent articles in-situ
JP7080555B2 (ja) * 2018-03-16 2022-06-06 株式会社ディスコ ウエーハの加工方法
JP7118804B2 (ja) 2018-08-17 2022-08-16 キオクシア株式会社 半導体装置の製造方法
KR102733241B1 (ko) 2019-05-07 2024-11-22 삼성디스플레이 주식회사 결합 부재, 표시 모듈 및 표시 장치의 제조 방법
JP7656850B2 (ja) * 2020-02-20 2025-04-04 協立化学産業株式会社 加工対象物切断方法及び樹脂塗布装置

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8870047B2 (en) 2011-02-01 2014-10-28 Samsung Electronics Co., Ltd. Wafer dicing press and method and semiconductor wafer dicing system including the same
US9252055B2 (en) 2011-02-01 2016-02-02 Samsung Electronics Co., Ltd. Wafer dicing press and method and semiconductor wafer dicing system including the same
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US11219966B1 (en) 2018-12-29 2022-01-11 Wolfspeed, Inc. Laser-assisted method for parting crystalline material
US11826846B2 (en) 2018-12-29 2023-11-28 Wolfspeed, Inc. Laser-assisted method for parting crystalline material
US11901181B2 (en) 2018-12-29 2024-02-13 Wolfspeed, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US11911842B2 (en) 2018-12-29 2024-02-27 Wolfspeed, Inc. Laser-assisted method for parting crystalline material
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
US11034056B2 (en) 2019-05-17 2021-06-15 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
US11654596B2 (en) 2019-05-17 2023-05-23 Wolfspeed, Inc. Silicon carbide wafers with relaxed positive bow and related methods

Also Published As

Publication number Publication date
JP2003334675A (ja) 2003-11-25

Similar Documents

Publication Publication Date Title
JP4606741B2 (ja) 加工対象物切断方法
JP4409840B2 (ja) 加工対象物切断方法
JP4932955B2 (ja) 切断起点領域形成の制御装置
JP3624909B2 (ja) レーザ加工方法
JP3670267B2 (ja) レーザ加工方法
WO2004080643A1 (ja) レーザ加工方法
JP2003338467A (ja) 半導体基板の切断方法
JP4167094B2 (ja) レーザ加工方法
JP3935189B2 (ja) レーザ加工方法
JP3935186B2 (ja) 半導体基板の切断方法
JP4463796B2 (ja) レーザ加工方法
JP4509719B2 (ja) レーザ加工方法
WO2004080642A1 (ja) レーザ加工方法
JP4527098B2 (ja) レーザ加工方法
JP2006135355A (ja) 半導体基板の切断方法
JP3869850B2 (ja) レーザ加工方法
JP3867100B2 (ja) 半導体基板の切断方法
JP3867104B2 (ja) 半導体基板の切断方法
JP2004268103A (ja) レーザ加工方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060306

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060306

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080724

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080729

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20081216

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090216

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20090216

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090428

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090728

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20090804

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20090728

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20091110

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20091112

R150 Certificate of patent or registration of utility model

Ref document number: 4409840

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121120

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131120

Year of fee payment: 4

EXPY Cancellation because of completion of term