JP3867104B2 - 半導体基板の切断方法 - Google Patents
半導体基板の切断方法 Download PDFInfo
- Publication number
- JP3867104B2 JP3867104B2 JP2006016261A JP2006016261A JP3867104B2 JP 3867104 B2 JP3867104 B2 JP 3867104B2 JP 2006016261 A JP2006016261 A JP 2006016261A JP 2006016261 A JP2006016261 A JP 2006016261A JP 3867104 B2 JP3867104 B2 JP 3867104B2
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- JP
- Japan
- Prior art keywords
- semiconductor substrate
- silicon wafer
- cutting
- cut
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
Description
(A)半導体基板:シリコンウェハ(厚さ350μm、外径4インチ)
(B)レーザ
光源:半導体レーザ励起Nd:YAGレーザ
波長:1064nm
レーザ光スポット断面積:3.14×10-8cm2
発振形態:Qスイッチパルス
繰り返し周波数:100kHz
パルス幅:30ns
出力:20μJ/パルス
レーザ光品質:TEM00
偏光特性:直線偏光
(C)集光用レンズ
倍率:50倍
N.A.:0.55
レーザ光波長に対する透過率:60パーセント
(D)半導体基板が載置される載置台の移動速度:100mm/秒
Claims (2)
- 表面に機能素子が形成された半導体基板の切断方法であって、前記半導体基板の内部に、切断予定ラインに沿ってレーザ光を照射することにより、前記半導体基板の内部に一旦溶融後再固化した領域である溶融処理領域を形成し、この溶融処理領域でもって切断予定部を形成すること、及び前記溶融処理領域から前記半導体基板の表面に割れを到達させることを含む工程と、
次いで前記半導体基板を前記切断予定部に沿って半導体チップに切断する工程とを有する半導体基板の切断方法。 - マトリックス状に配置された複数の機能素子が表面に形成された半導体基板の内部に、隣合う前記機能素子間にレーザ光を照射することにより、前記半導体基板の内部に前記機能素子間を通る格子状の一旦溶融後再固化した領域である溶融処理領域を形成し、この溶融処理領域でもって切断予定部を形成すること、及び前記溶融処理領域から前記半導体基板の表面に割れを到達させることを含む工程と、
次いで前記半導体基板を前記切断予定部に沿って、前記機能素子をそれぞれ有する半導体チップに切断する工程とを有する半導体基板の切断方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006016261A JP3867104B2 (ja) | 2002-03-12 | 2006-01-25 | 半導体基板の切断方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002067348 | 2002-03-12 | ||
JP2002067372 | 2002-03-12 | ||
JP2006016261A JP3867104B2 (ja) | 2002-03-12 | 2006-01-25 | 半導体基板の切断方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2002351600A Division JP4358502B2 (ja) | 2002-03-12 | 2002-12-03 | 半導体基板の切断方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006114937A JP2006114937A (ja) | 2006-04-27 |
JP3867104B2 true JP3867104B2 (ja) | 2007-01-10 |
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Application Number | Title | Priority Date | Filing Date |
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JP2006016261A Expired - Lifetime JP3867104B2 (ja) | 2002-03-12 | 2006-01-25 | 半導体基板の切断方法 |
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JP (1) | JP3867104B2 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
-
2006
- 2006-01-25 JP JP2006016261A patent/JP3867104B2/ja not_active Expired - Lifetime
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
US11219966B1 (en) | 2018-12-29 | 2022-01-11 | Wolfspeed, Inc. | Laser-assisted method for parting crystalline material |
US11826846B2 (en) | 2018-12-29 | 2023-11-28 | Wolfspeed, Inc. | Laser-assisted method for parting crystalline material |
US11901181B2 (en) | 2018-12-29 | 2024-02-13 | Wolfspeed, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
US11911842B2 (en) | 2018-12-29 | 2024-02-27 | Wolfspeed, Inc. | Laser-assisted method for parting crystalline material |
US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
US11034056B2 (en) | 2019-05-17 | 2021-06-15 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
US11654596B2 (en) | 2019-05-17 | 2023-05-23 | Wolfspeed, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
Also Published As
Publication number | Publication date |
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JP2006114937A (ja) | 2006-04-27 |
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