JP4397942B2 - 半導体集積回路装置の製造方法 - Google Patents

半導体集積回路装置の製造方法 Download PDF

Info

Publication number
JP4397942B2
JP4397942B2 JP2007196840A JP2007196840A JP4397942B2 JP 4397942 B2 JP4397942 B2 JP 4397942B2 JP 2007196840 A JP2007196840 A JP 2007196840A JP 2007196840 A JP2007196840 A JP 2007196840A JP 4397942 B2 JP4397942 B2 JP 4397942B2
Authority
JP
Japan
Prior art keywords
mold
film
cavity
resin
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007196840A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007329493A (ja
JP2007329493A5 (https=
Inventor
文司 倉冨
洋一 河田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2007196840A priority Critical patent/JP4397942B2/ja
Publication of JP2007329493A publication Critical patent/JP2007329493A/ja
Publication of JP2007329493A5 publication Critical patent/JP2007329493A5/ja
Application granted granted Critical
Publication of JP4397942B2 publication Critical patent/JP4397942B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/014Manufacture or treatment using batch processing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/016Manufacture or treatment using moulds
    • H10W74/017Auxiliary layers for moulds, e.g. release layers or layers preventing residue
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/0198Manufacture or treatment batch processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Moulds For Moulding Plastics Or The Like (AREA)
  • Injection Moulding Of Plastics Or The Like (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
JP2007196840A 2007-07-30 2007-07-30 半導体集積回路装置の製造方法 Expired - Fee Related JP4397942B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007196840A JP4397942B2 (ja) 2007-07-30 2007-07-30 半導体集積回路装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007196840A JP4397942B2 (ja) 2007-07-30 2007-07-30 半導体集積回路装置の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2005116766A Division JP4012210B2 (ja) 2005-04-14 2005-04-14 半導体集積回路装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009199137A Division JP5119221B2 (ja) 2009-08-31 2009-08-31 半導体集積回路装置の製造方法

Publications (3)

Publication Number Publication Date
JP2007329493A JP2007329493A (ja) 2007-12-20
JP2007329493A5 JP2007329493A5 (https=) 2009-03-19
JP4397942B2 true JP4397942B2 (ja) 2010-01-13

Family

ID=38929709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007196840A Expired - Fee Related JP4397942B2 (ja) 2007-07-30 2007-07-30 半導体集積回路装置の製造方法

Country Status (1)

Country Link
JP (1) JP4397942B2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009283981A (ja) * 2009-08-31 2009-12-03 Renesas Technology Corp 半導体集積回路装置の製造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5235506B2 (ja) * 2008-06-02 2013-07-10 キヤノン株式会社 パターン転写装置及びデバイス製造方法
JP5148376B2 (ja) * 2008-06-11 2013-02-20 日本写真印刷株式会社 射出成形用金型及びこれを用いた樹脂成形品の製造方法
JP6603678B2 (ja) * 2016-02-26 2019-11-06 キヤノン株式会社 インプリント装置およびその動作方法ならびに物品製造方法
WO2017145924A1 (ja) * 2016-02-26 2017-08-31 キヤノン株式会社 インプリント装置およびその動作方法ならびに物品製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009283981A (ja) * 2009-08-31 2009-12-03 Renesas Technology Corp 半導体集積回路装置の製造方法

Also Published As

Publication number Publication date
JP2007329493A (ja) 2007-12-20

Similar Documents

Publication Publication Date Title
JP3970464B2 (ja) 半導体集積回路装置の製造方法
TW511260B (en) Semiconductor device and its manufacture method
CN101405854B (zh) 树脂封固成形装置
CN103545224B (zh) 树脂模塑装置和树脂模塑方法
CN100469550C (zh) 电子元器件的树脂密封方法以及用于该方法的模具
TW200524062A (en) Semiconductor device and manufacturing method thereof
JP4397942B2 (ja) 半導体集積回路装置の製造方法
JP3450223B2 (ja) 半導体装置封入用金型、及び、半導体装置封入方法
JP2002036270A (ja) 樹脂封止方法及び樹脂封止装置
JP3658258B2 (ja) 半導体装置の製造方法
JP2004193582A (ja) 樹脂封止装置
JP4012210B2 (ja) 半導体集積回路装置の製造方法
JP5634467B2 (ja) 半導体集積回路装置の製造方法
JP4778494B2 (ja) 半導体装置の製造方法
CN107146763A (zh) 指纹辨识芯片封装结构的制作方法及制作设备
JP5119221B2 (ja) 半導体集積回路装置の製造方法
WO2014006956A1 (ja) フィルム状樹脂積層装置
JP3139981B2 (ja) チップサイズパッケージの樹脂封止方法及び樹脂封止装置
JP2005136440A (ja) 半導体装置の製造方法
JP2005085832A (ja) 樹脂モールド装置
TW202210267A (zh) 樹脂洩漏防止用部件、樹脂洩漏防止用部件供給機構、樹脂成型裝置及樹脂成型品的製造方法
TWI870883B (zh) 樹脂密封裝置及樹脂密封方法
JP3793679B2 (ja) 電子部品の製造方法及び製造装置
JP2007287944A (ja) Pop用の半導体装置の製造方法
JP4326788B2 (ja) 半導体製造装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090130

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20090130

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20090212

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090618

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090630

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090831

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090924

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20091021

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121030

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121030

Year of fee payment: 3

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121030

Year of fee payment: 3

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121030

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131030

Year of fee payment: 4

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees