JP4394528B2 - 電子線描画方法、および電子線描画装置 - Google Patents
電子線描画方法、および電子線描画装置 Download PDFInfo
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- JP4394528B2 JP4394528B2 JP2004208692A JP2004208692A JP4394528B2 JP 4394528 B2 JP4394528 B2 JP 4394528B2 JP 2004208692 A JP2004208692 A JP 2004208692A JP 2004208692 A JP2004208692 A JP 2004208692A JP 4394528 B2 JP4394528 B2 JP 4394528B2
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- atmospheric pressure
- electron beam
- pressure fluctuation
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31793—Problems associated with lithography
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
Description
Claims (3)
- 電子ビームにより試料に描画を行う電子線描画方法において、
前回の描画較正時に計測された気圧との気圧差および前回の描画較正時からの経過時間を逐次計測し、
前記経過時間に対する前記気圧差の割合が、気圧変動割合規定値以上のときには、描画精度の較正を実行し、
前記気圧変動割合規定値を複数設け、
前記気圧差の割合を前記複数の気圧変動割合規定値に照らして、計測のために気圧データを取り込む間隔を選択設定することを特徴とする電子線描画方法。 - 電子ビームにより試料に描画を行なう電子線描画方法において、
前回の描画較正時に計測された気圧との気圧差および前回の描画較正時からの経過時間を逐次計測し、
前記経過時間に対する前記気圧差の割合が、気圧変動割合規定値以上のときには、描画精度の較正を実行し、
前記気圧変動割合規定値を複数設け、
前記気圧差の割合を前記複数の気圧変動割合規定値に照らして、描画較正の実行内容を選択することを特徴とする電子線描画方法。 - 電子ビームにより試料に描画を行なう電子線描画方法において、
定期的に描画精度の較正を行う定期描画較正メニューと、
時間に対する気圧変動の割合に応じて描画精度の較正を行う気圧変動描画較正メニューとを有し、
前記定期描画較正メニューと前記気圧変動描画較正メニューの実行時期が重なったときには、前記気圧変動描画較正メニューの実行を優先することを特徴とする電子線描画方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004208692A JP4394528B2 (ja) | 2004-07-15 | 2004-07-15 | 電子線描画方法、および電子線描画装置 |
US11/179,628 US7342241B2 (en) | 2004-07-15 | 2005-07-13 | Method and apparatus for electron-beam lithography |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004208692A JP4394528B2 (ja) | 2004-07-15 | 2004-07-15 | 電子線描画方法、および電子線描画装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006032616A JP2006032616A (ja) | 2006-02-02 |
JP4394528B2 true JP4394528B2 (ja) | 2010-01-06 |
Family
ID=35598074
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004208692A Expired - Fee Related JP4394528B2 (ja) | 2004-07-15 | 2004-07-15 | 電子線描画方法、および電子線描画装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7342241B2 (ja) |
JP (1) | JP4394528B2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4520426B2 (ja) * | 2005-07-04 | 2010-08-04 | 株式会社ニューフレアテクノロジー | 電子ビームのビームドリフト補正方法及び電子ビームの描画方法 |
US7589335B2 (en) * | 2006-07-14 | 2009-09-15 | Nuflare Technology, Inc. | Charged-particle beam pattern writing method and apparatus and software program for use therein |
EP2284864A4 (en) * | 2008-05-09 | 2011-09-21 | Advantest Corp | SYSTEM AND METHOD FOR ELECTRON BEAM LITHOGRAPHY |
JP2011066054A (ja) * | 2009-09-15 | 2011-03-31 | Nuflare Technology Inc | 荷電粒子ビーム描画装置 |
JP7070033B2 (ja) * | 2018-04-25 | 2022-05-18 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07211612A (ja) | 1994-01-14 | 1995-08-11 | Nikon Corp | 投影露光装置 |
JP4666747B2 (ja) * | 2000-11-06 | 2011-04-06 | キヤノン株式会社 | 露光装置およびデバイス製造方法 |
JP2003017394A (ja) | 2001-07-03 | 2003-01-17 | Toshiba Corp | 荷電粒子ビーム描画装置 |
JP2003124096A (ja) * | 2001-10-11 | 2003-04-25 | Advantest Corp | 電子ビーム露光方法及び露光装置 |
-
2004
- 2004-07-15 JP JP2004208692A patent/JP4394528B2/ja not_active Expired - Fee Related
-
2005
- 2005-07-13 US US11/179,628 patent/US7342241B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7342241B2 (en) | 2008-03-11 |
US20060011080A1 (en) | 2006-01-19 |
JP2006032616A (ja) | 2006-02-02 |
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