JP4393859B2 - 記録媒体の作製方法 - Google Patents
記録媒体の作製方法 Download PDFInfo
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- JP4393859B2 JP4393859B2 JP2003426321A JP2003426321A JP4393859B2 JP 4393859 B2 JP4393859 B2 JP 4393859B2 JP 2003426321 A JP2003426321 A JP 2003426321A JP 2003426321 A JP2003426321 A JP 2003426321A JP 4393859 B2 JP4393859 B2 JP 4393859B2
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- film
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- integrated circuit
- display device
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- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000010408 film Substances 0.000 claims description 244
- 239000000758 substrate Substances 0.000 claims description 163
- 239000004065 semiconductor Substances 0.000 claims description 83
- 239000010409 thin film Substances 0.000 claims description 70
- 238000000034 method Methods 0.000 claims description 43
- 229920005989 resin Polymers 0.000 claims description 36
- 239000011347 resin Substances 0.000 claims description 36
- 229910044991 metal oxide Inorganic materials 0.000 claims description 32
- 150000004706 metal oxides Chemical class 0.000 claims description 32
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- 239000004033 plastic Substances 0.000 claims description 31
- 229920003023 plastic Polymers 0.000 claims description 31
- 239000000853 adhesive Substances 0.000 claims description 29
- 230000001070 adhesive effect Effects 0.000 claims description 27
- 238000010438 heat treatment Methods 0.000 claims description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 238000005259 measurement Methods 0.000 description 36
- 239000010410 layer Substances 0.000 description 29
- 239000000463 material Substances 0.000 description 28
- 239000004973 liquid crystal related substance Substances 0.000 description 27
- 239000011229 interlayer Substances 0.000 description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 229910052710 silicon Inorganic materials 0.000 description 22
- 239000010703 silicon Substances 0.000 description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 16
- 239000001301 oxygen Substances 0.000 description 16
- 229910052760 oxygen Inorganic materials 0.000 description 16
- 229910052581 Si3N4 Inorganic materials 0.000 description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 15
- 239000011241 protective layer Substances 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 238000007789 sealing Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- 230000006870 function Effects 0.000 description 8
- 239000004417 polycarbonate Substances 0.000 description 8
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 6
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- 238000012545 processing Methods 0.000 description 6
- 239000003566 sealing material Substances 0.000 description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000005499 laser crystallization Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
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- 125000006850 spacer group Chemical group 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
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- 230000001815 facial effect Effects 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
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- -1 polyethylene terephthalate Polymers 0.000 description 3
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- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000004697 Polyetherimide Substances 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
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- 238000000227 grinding Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920002492 poly(sulfone) Polymers 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
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- 238000007639 printing Methods 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004990 Smectic liquid crystal Substances 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 description 1
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011111 cardboard Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000004815 dispersion polymer Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Credit Cards Or The Like (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003426321A JP4393859B2 (ja) | 2002-12-27 | 2003-12-24 | 記録媒体の作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002378853 | 2002-12-27 | ||
| JP2003426321A JP4393859B2 (ja) | 2002-12-27 | 2003-12-24 | 記録媒体の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007000971A Division JP4646925B2 (ja) | 2002-12-27 | 2007-01-09 | Ｉｃカードの作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004220591A JP2004220591A (ja) | 2004-08-05 |
| JP2004220591A5 JP2004220591A5 (enExample) | 2007-02-15 |
| JP4393859B2 true JP4393859B2 (ja) | 2010-01-06 |
Family
ID=32911217
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003426321A Expired - Fee Related JP4393859B2 (ja) | 2002-12-27 | 2003-12-24 | 記録媒体の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4393859B2 (enExample) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005100380A (ja) * | 2003-08-29 | 2005-04-14 | Semiconductor Energy Lab Co Ltd | Ｉｃカード |
| US7566001B2 (en) | 2003-08-29 | 2009-07-28 | Semiconductor Energy Laboratory Co., Ltd. | IC card |
| JP4912641B2 (ja) * | 2004-08-23 | 2012-04-11 | 株式会社半導体エネルギー研究所 | 無線チップの作製方法 |
| KR101233421B1 (ko) | 2004-09-09 | 2013-02-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP2006108654A (ja) * | 2004-09-09 | 2006-04-20 | Semiconductor Energy Lab Co Ltd | 無線チップ |
| JP4845461B2 (ja) * | 2004-09-14 | 2011-12-28 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
| US8698262B2 (en) | 2004-09-14 | 2014-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Wireless chip and manufacturing method of the same |
| KR20140015128A (ko) | 2004-10-18 | 2014-02-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US7793848B2 (en) * | 2004-11-30 | 2010-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP4712545B2 (ja) * | 2004-11-30 | 2011-06-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2006059554A1 (en) | 2004-12-03 | 2006-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP4954537B2 (ja) * | 2004-12-03 | 2012-06-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2006078065A1 (en) | 2005-01-21 | 2006-07-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN101111938B (zh) | 2005-01-28 | 2010-08-11 | 株式会社半导体能源研究所 | 半导体器件和制造它的方法 |
| JP5100012B2 (ja) * | 2005-01-28 | 2012-12-19 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
| WO2006080550A1 (en) | 2005-01-31 | 2006-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
| JP2006237593A (ja) * | 2005-01-31 | 2006-09-07 | Semiconductor Energy Lab Co Ltd | 記憶装置および半導体装置 |
| WO2006085633A1 (en) | 2005-02-10 | 2006-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Memory element and semiconductor device |
| JP5046524B2 (ja) * | 2005-02-10 | 2012-10-10 | 株式会社半導体エネルギー研究所 | 記憶素子、記憶装置、及び電子機器 |
| EP1696368B1 (en) | 2005-02-28 | 2011-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| JP4900659B2 (ja) * | 2005-02-28 | 2012-03-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP5025141B2 (ja) * | 2005-02-28 | 2012-09-12 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
| US20060202269A1 (en) | 2005-03-08 | 2006-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Wireless chip and electronic appliance having the same |
| JP4974541B2 (ja) * | 2005-03-08 | 2012-07-11 | 株式会社半導体エネルギー研究所 | 無線チップの作製方法 |
| US7651932B2 (en) | 2005-05-31 | 2010-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing antenna and method for manufacturing semiconductor device |
| US7485511B2 (en) | 2005-06-01 | 2009-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Integrated circuit device and method for manufacturing integrated circuit device |
| JP5210501B2 (ja) * | 2005-06-01 | 2013-06-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR20080036168A (ko) * | 2005-06-24 | 2008-04-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 및 무선 통신 시스템 |
| JP2007036216A (ja) * | 2005-06-24 | 2007-02-08 | Semiconductor Energy Lab Co Ltd | 半導体装置及び無線通信システム |
| JP4916680B2 (ja) * | 2005-06-30 | 2012-04-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、剥離方法 |
| WO2007077850A1 (en) * | 2005-12-27 | 2007-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| ES2491515T3 (es) * | 2007-03-19 | 2014-09-08 | Nagravision S.A. | Tarjeta que incorpora una visualización electrónica |
| JP2009086067A (ja) * | 2007-09-28 | 2009-04-23 | Dainippon Printing Co Ltd | 表示付きｉｃカードおよびディスプレイモジュール、ディスプレイモジュールの製造方法 |
-
2003
- 2003-12-24 JP JP2003426321A patent/JP4393859B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004220591A (ja) | 2004-08-05 |
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