JP4391069B2 - ヘテロバイポーラトランジスタおよびその製造方法 - Google Patents

ヘテロバイポーラトランジスタおよびその製造方法 Download PDF

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Publication number
JP4391069B2
JP4391069B2 JP2002271172A JP2002271172A JP4391069B2 JP 4391069 B2 JP4391069 B2 JP 4391069B2 JP 2002271172 A JP2002271172 A JP 2002271172A JP 2002271172 A JP2002271172 A JP 2002271172A JP 4391069 B2 JP4391069 B2 JP 4391069B2
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Japan
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layer
concentration
emitter
base layer
collector
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JP2002271172A
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Japanese (ja)
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JP2004031884A5 (enExample
JP2004031884A (ja
Inventor
豪一 佐藤
孝江 助川
浩助 鈴木
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Fujitsu Semiconductor Ltd
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Fujitsu Semiconductor Ltd
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Priority to JP2002271172A priority Critical patent/JP4391069B2/ja
Priority to US10/413,394 priority patent/US7119382B2/en
Publication of JP2004031884A publication Critical patent/JP2004031884A/ja
Publication of JP2004031884A5 publication Critical patent/JP2004031884A5/ja
Priority to US11/445,240 priority patent/US7358546B2/en
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Publication of JP4391069B2 publication Critical patent/JP4391069B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/891—Vertical heterojunction BJTs comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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  • Bipolar Transistors (AREA)
JP2002271172A 2002-04-30 2002-09-18 ヘテロバイポーラトランジスタおよびその製造方法 Expired - Fee Related JP4391069B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002271172A JP4391069B2 (ja) 2002-04-30 2002-09-18 ヘテロバイポーラトランジスタおよびその製造方法
US10/413,394 US7119382B2 (en) 2002-04-30 2003-04-15 Heterobipolar transistor and method of fabricating the same
US11/445,240 US7358546B2 (en) 2002-04-30 2006-06-02 Heterobipolar transistor and method of fabricating the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002129062 2002-04-30
JP2002271172A JP4391069B2 (ja) 2002-04-30 2002-09-18 ヘテロバイポーラトランジスタおよびその製造方法

Publications (3)

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JP2004031884A JP2004031884A (ja) 2004-01-29
JP2004031884A5 JP2004031884A5 (enExample) 2005-10-27
JP4391069B2 true JP4391069B2 (ja) 2009-12-24

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JP2002271172A Expired - Fee Related JP4391069B2 (ja) 2002-04-30 2002-09-18 ヘテロバイポーラトランジスタおよびその製造方法

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US (2) US7119382B2 (enExample)
JP (1) JP4391069B2 (enExample)

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US6744079B2 (en) * 2002-03-08 2004-06-01 International Business Machines Corporation Optimized blocking impurity placement for SiGe HBTs
JP2004111852A (ja) * 2002-09-20 2004-04-08 Fujitsu Ltd 半導体装置及びその製造方法
US7517768B2 (en) * 2003-03-31 2009-04-14 Intel Corporation Method for fabricating a heterojunction bipolar transistor
JP4775688B2 (ja) * 2004-07-16 2011-09-21 オンセミコンダクター・トレーディング・リミテッド 半導体装置
US7317215B2 (en) * 2004-09-21 2008-01-08 International Business Machines Corporation SiGe heterojunction bipolar transistor (HBT)
JP4945072B2 (ja) * 2004-11-09 2012-06-06 株式会社東芝 半導体装置及びその製造方法
US7297992B1 (en) * 2004-11-23 2007-11-20 Newport Fab, Llc Method and structure for integration of phosphorous emitter in an NPN device in a BiCMOS process
JP4829566B2 (ja) * 2005-08-30 2011-12-07 株式会社日立製作所 半導体装置及びその製造方法
US7651919B2 (en) * 2005-11-04 2010-01-26 Atmel Corporation Bandgap and recombination engineered emitter layers for SiGe HBT performance optimization
US20070102729A1 (en) * 2005-11-04 2007-05-10 Enicks Darwin G Method and system for providing a heterojunction bipolar transistor having SiGe extensions
US7300849B2 (en) * 2005-11-04 2007-11-27 Atmel Corporation Bandgap engineered mono-crystalline silicon cap layers for SiGe HBT performance enhancement
US7892915B1 (en) * 2006-03-02 2011-02-22 National Semiconductor Corporation High performance SiGe:C HBT with phosphorous atomic layer doping
US7557010B2 (en) * 2007-02-12 2009-07-07 Agere Systems Inc. Method to improve writer leakage in a SiGe bipolar device
US7560354B2 (en) * 2007-08-08 2009-07-14 Freescale Semiconductor, Inc. Process of forming an electronic device including a doped semiconductor layer
WO2009107087A1 (en) * 2008-02-28 2009-09-03 Nxp B.V. Semiconductor device and method of manufacture thereof
US8107197B2 (en) * 2008-12-30 2012-01-31 Hitachi Global Storage Technologies Netherlands B.V. Slider with integrated writer and semiconductor heterostucture read sensor
EP2418681B1 (en) * 2010-08-10 2017-10-11 Nxp B.V. Heterojunction Bipolar Transistor and Manufacturing Method
US20150017788A1 (en) * 2013-07-11 2015-01-15 Bae Systems Information And Electronic Systems Integration Inc. Method for making silicon-germanium absorbers for thermal sensors
US9691898B2 (en) 2013-12-19 2017-06-27 Taiwan Semiconductor Manufacturing Co., Ltd. Germanium profile for channel strain
US9287398B2 (en) 2014-02-14 2016-03-15 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor strain-inducing scheme
US10431654B2 (en) 2015-06-25 2019-10-01 International Business Machines Corporation Extrinsic base doping for bipolar junction transistors
US20170062522A1 (en) * 2015-08-27 2017-03-02 Intermolecular, Inc. Combining Materials in Different Components of Selector Elements of Integrated Circuits
US11791159B2 (en) 2019-01-17 2023-10-17 Ramesh kumar Harjivan Kakkad Method of fabricating thin, crystalline silicon film and thin film transistors
CN113937090B (zh) * 2020-06-29 2025-11-18 中国科学院微电子研究所 堆叠式电容器、半导体存储器件及制备方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04106980A (ja) 1990-08-24 1992-04-08 Fujitsu Ltd 半導体装置及びその製造方法
DE4203799C2 (de) * 1992-02-10 1995-11-16 Grapha Holding Ag Anlage zum Verteilen von Stückgütern
US6750484B2 (en) * 1996-12-09 2004-06-15 Nokia Corporation Silicon germanium hetero bipolar transistor
JP3549408B2 (ja) 1998-09-03 2004-08-04 松下電器産業株式会社 バイポーラトランジスタ
EP1065728B1 (en) * 1999-06-22 2009-04-22 Panasonic Corporation Heterojunction bipolar transistors and corresponding fabrication methods
JP2001189321A (ja) 1999-10-21 2001-07-10 Matsushita Electric Ind Co Ltd 横型ヘテロバイポーラトランジスタ及びその製造方法
JP4702977B2 (ja) * 2000-04-28 2011-06-15 富士通株式会社 受光装置
JP3528756B2 (ja) 2000-05-12 2004-05-24 松下電器産業株式会社 半導体装置
JP2001319936A (ja) 2000-05-12 2001-11-16 Matsushita Electric Ind Co Ltd バイポーラトランジスタ及びその製造方法
JP2001332563A (ja) * 2000-05-23 2001-11-30 Matsushita Electric Ind Co Ltd バイポーラトランジスタ及びその製造方法
US6410975B1 (en) * 2000-09-01 2002-06-25 Newport Fab, Llc Bipolar transistor with reduced base resistance
JP3415608B2 (ja) 2000-09-11 2003-06-09 松下電器産業株式会社 ヘテロバイポーラトランジスタ
US20020163013A1 (en) * 2000-09-11 2002-11-07 Kenji Toyoda Heterojunction bipolar transistor
US6750119B2 (en) * 2001-04-20 2004-06-15 International Business Machines Corporation Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD
EP1265294A3 (en) * 2001-06-07 2004-04-07 Matsushita Electric Industrial Co., Ltd. Heterojunction bipolar transistor
US6670654B2 (en) * 2002-01-09 2003-12-30 International Business Machines Corporation Silicon germanium heterojunction bipolar transistor with carbon incorporation
JP3600591B2 (ja) 2002-03-28 2004-12-15 沖電気工業株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
US20030201461A1 (en) 2003-10-30
US7358546B2 (en) 2008-04-15
US20070181910A1 (en) 2007-08-09
JP2004031884A (ja) 2004-01-29
US7119382B2 (en) 2006-10-10

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