JP4385504B2 - 窒化物半導体基板及びその製造方法 - Google Patents

窒化物半導体基板及びその製造方法 Download PDF

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Publication number
JP4385504B2
JP4385504B2 JP2000212926A JP2000212926A JP4385504B2 JP 4385504 B2 JP4385504 B2 JP 4385504B2 JP 2000212926 A JP2000212926 A JP 2000212926A JP 2000212926 A JP2000212926 A JP 2000212926A JP 4385504 B2 JP4385504 B2 JP 4385504B2
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Japan
Prior art keywords
nitride semiconductor
protective film
substrate
semiconductor layer
growth
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Expired - Fee Related
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JP2000212926A
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English (en)
Japanese (ja)
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JP2002033282A (ja
JP2002033282A5 (enrdf_load_stackoverflow
Inventor
一幸 蝶々
仁志 前川
章喜 木内
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Nichia Corp
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Nichia Corp
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Priority to JP2000212926A priority Critical patent/JP4385504B2/ja
Publication of JP2002033282A publication Critical patent/JP2002033282A/ja
Publication of JP2002033282A5 publication Critical patent/JP2002033282A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding

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  • Chemical Vapour Deposition (AREA)
  • Led Devices (AREA)
JP2000212926A 2000-07-13 2000-07-13 窒化物半導体基板及びその製造方法 Expired - Fee Related JP4385504B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000212926A JP4385504B2 (ja) 2000-07-13 2000-07-13 窒化物半導体基板及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000212926A JP4385504B2 (ja) 2000-07-13 2000-07-13 窒化物半導体基板及びその製造方法

Publications (3)

Publication Number Publication Date
JP2002033282A JP2002033282A (ja) 2002-01-31
JP2002033282A5 JP2002033282A5 (enrdf_load_stackoverflow) 2007-08-30
JP4385504B2 true JP4385504B2 (ja) 2009-12-16

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JP2000212926A Expired - Fee Related JP4385504B2 (ja) 2000-07-13 2000-07-13 窒化物半導体基板及びその製造方法

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JP (1) JP4385504B2 (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1625612B1 (en) * 2003-05-21 2015-10-21 Saint-Gobain Cristaux & Détecteurs Manufacturing gallium nitride substrates by lateral overgrowth through masks
JP2006005044A (ja) * 2004-06-16 2006-01-05 Rohm Co Ltd 窒化物系半導体発光素子及びその製造方法
CN100444319C (zh) * 2004-09-06 2008-12-17 璨圆光电股份有限公司 氮化物外延层制作方法及其结构
JP4140606B2 (ja) 2005-01-11 2008-08-27 ソニー株式会社 ＧａＮ系半導体発光素子の製造方法
JP4857616B2 (ja) * 2005-06-17 2012-01-18 ソニー株式会社 ＧａＮ系化合物半導体層の形成方法、及び、ＧａＮ系半導体発光素子の製造方法
KR20090008321A (ko) * 2006-04-28 2009-01-21 스미토모덴키고교가부시키가이샤 질화갈륨 결정을 제작하는 방법 및 질화갈륨 웨이퍼
JP4964026B2 (ja) * 2007-05-28 2012-06-27 三洋電機株式会社 窒化物系半導体レーザ素子の作製方法
JP4964027B2 (ja) * 2007-05-28 2012-06-27 三洋電機株式会社 窒化物系半導体レーザ素子の作製方法
CN116344698B (zh) * 2023-05-22 2023-08-29 江西兆驰半导体有限公司 图形化衬底GaN基LED外延片及其制备方法

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JP2002033282A (ja) 2002-01-31

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