JP4385016B2 - 光のテレセントリック性を歪めることなく照明フィールド内の光の強度の変動を修正する装置 - Google Patents

光のテレセントリック性を歪めることなく照明フィールド内の光の強度の変動を修正する装置 Download PDF

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Publication number
JP4385016B2
JP4385016B2 JP2005299354A JP2005299354A JP4385016B2 JP 4385016 B2 JP4385016 B2 JP 4385016B2 JP 2005299354 A JP2005299354 A JP 2005299354A JP 2005299354 A JP2005299354 A JP 2005299354A JP 4385016 B2 JP4385016 B2 JP 4385016B2
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JP
Japan
Prior art keywords
blade structure
light
illumination field
illumination
actuator
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2005299354A
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English (en)
Japanese (ja)
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JP2006140460A (ja
JP2006140460A5 (enExample
Inventor
ルー スティーヴン
ロープストラ エリク
エル ネルソン マイケル
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ASML Holding NV
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ASML Holding NV
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Publication of JP2006140460A5 publication Critical patent/JP2006140460A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2005299354A 2004-10-13 2005-10-13 光のテレセントリック性を歪めることなく照明フィールド内の光の強度の変動を修正する装置 Expired - Fee Related JP4385016B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/962,550 US7119883B2 (en) 2004-10-13 2004-10-13 Correcting variations in the intensity of light within an illumination field without distorting the telecentricity of the light

Publications (3)

Publication Number Publication Date
JP2006140460A JP2006140460A (ja) 2006-06-01
JP2006140460A5 JP2006140460A5 (enExample) 2006-09-14
JP4385016B2 true JP4385016B2 (ja) 2009-12-16

Family

ID=36144874

Family Applications (1)

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JP2005299354A Expired - Fee Related JP4385016B2 (ja) 2004-10-13 2005-10-13 光のテレセントリック性を歪めることなく照明フィールド内の光の強度の変動を修正する装置

Country Status (2)

Country Link
US (2) US7119883B2 (enExample)
JP (1) JP4385016B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7119883B2 (en) * 2004-10-13 2006-10-10 Asml Holding N.V. Correcting variations in the intensity of light within an illumination field without distorting the telecentricity of the light
US7173688B2 (en) * 2004-12-28 2007-02-06 Asml Holding N.V. Method for calculating an intensity integral for use in lithography systems
JP5902884B2 (ja) * 2007-10-26 2016-04-13 カール・ツァイス・エスエムティー・ゲーエムベーハー 結像光学系及びこの種の結像光学系を含むマイクロリソグラフィ用の投影露光装置
JP2009164355A (ja) * 2008-01-07 2009-07-23 Canon Inc 走査露光装置およびデバイス製造方法
JPWO2011010560A1 (ja) * 2009-07-24 2012-12-27 株式会社ニコン 照明光学系、露光装置、およびデバイス製造方法
US10866519B1 (en) * 2019-10-01 2020-12-15 Taiwan Semiconductor Manufacturing Company Ltd. Reticle-masking structure, extreme ultraviolet apparatus, and method of forming the same

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115725U (ja) * 1982-02-01 1983-08-08 株式会社ニコン 光制御装置用遮光羽根
US5315629A (en) 1990-10-10 1994-05-24 At&T Bell Laboratories Ringfield lithography
US5361292A (en) 1993-05-11 1994-11-01 The United States Of America As Represented By The Department Of Energy Condenser for illuminating a ring field
US5631721A (en) 1995-05-24 1997-05-20 Svg Lithography Systems, Inc. Hybrid illumination system for use in photolithography
JP3711586B2 (ja) * 1995-06-02 2005-11-02 株式会社ニコン 走査露光装置
JPH10106942A (ja) 1996-10-02 1998-04-24 Canon Inc 走査型露光装置及びそれを用いた半導体デバイスの製造方法
US6013401A (en) * 1997-03-31 2000-01-11 Svg Lithography Systems, Inc. Method of controlling illumination field to reduce line width variation
US6014252A (en) 1998-02-20 2000-01-11 The Regents Of The University Of California Reflective optical imaging system
US6186632B1 (en) 1998-12-31 2001-02-13 The Regents Of The University Of California Condenser for ring-field deep-ultraviolet and extreme-ultraviolet lithography
US6195201B1 (en) 1999-01-27 2001-02-27 Svg Lithography Systems, Inc. Reflective fly's eye condenser for EUV lithography
US6476905B1 (en) * 2000-01-20 2002-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Step and scan exposure system equipped with a plurality of attenuator blades for exposure control
TWI283798B (en) 2000-01-20 2007-07-11 Asml Netherlands Bv A microlithography projection apparatus
US6307682B1 (en) 2000-02-16 2001-10-23 Silicon Valley Group, Inc. Zoom illumination system for use in photolithography
JP2001244183A (ja) 2000-02-29 2001-09-07 Canon Inc 投影露光装置
JP3599629B2 (ja) 2000-03-06 2004-12-08 キヤノン株式会社 照明光学系及び前記照明光学系を用いた露光装置
JP2002184676A (ja) 2000-12-18 2002-06-28 Nikon Corp 照明光学装置および該照明光学装置を備えた露光装置
US6741329B2 (en) * 2001-09-07 2004-05-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4923370B2 (ja) 2001-09-18 2012-04-25 株式会社ニコン 照明光学系、露光装置、及びマイクロデバイスの製造方法
US6563907B1 (en) 2001-12-07 2003-05-13 Euv Llc Radiation source with shaped emission
TWI251116B (en) * 2002-12-19 2006-03-11 Asml Netherlands Bv Device manufacturing method, computer-readable medium and lithographic apparatus
US6853493B2 (en) 2003-01-07 2005-02-08 3M Innovative Properties Company Folded, telecentric projection lenses for use with pixelized panels
US7119883B2 (en) 2004-10-13 2006-10-10 Asml Holding N.V. Correcting variations in the intensity of light within an illumination field without distorting the telecentricity of the light

Also Published As

Publication number Publication date
JP2006140460A (ja) 2006-06-01
US7633599B2 (en) 2009-12-15
US20070013891A1 (en) 2007-01-18
US20060077372A1 (en) 2006-04-13
US7119883B2 (en) 2006-10-10

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