JP4366731B2 - 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法 - Google Patents

電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法 Download PDF

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Publication number
JP4366731B2
JP4366731B2 JP25637698A JP25637698A JP4366731B2 JP 4366731 B2 JP4366731 B2 JP 4366731B2 JP 25637698 A JP25637698 A JP 25637698A JP 25637698 A JP25637698 A JP 25637698A JP 4366731 B2 JP4366731 B2 JP 4366731B2
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Japan
Prior art keywords
substrate
single crystal
tft
gate
crystal silicon
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Expired - Fee Related
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JP25637698A
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Japanese (ja)
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JP2000089250A5 (enExample
JP2000089250A (ja
Inventor
英雄 山中
久良 矢元
勇一 佐藤
肇 矢木
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Sony Corp
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Sony Corp
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Priority to JP25637698A priority Critical patent/JP4366731B2/ja
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  • Liquid Crystal (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
JP25637698A 1998-09-10 1998-09-10 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法 Expired - Fee Related JP4366731B2 (ja)

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JP25637698A JP4366731B2 (ja) 1998-09-10 1998-09-10 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法

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JP25637698A JP4366731B2 (ja) 1998-09-10 1998-09-10 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法

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JP2000089250A JP2000089250A (ja) 2000-03-31
JP2000089250A5 JP2000089250A5 (enExample) 2005-10-27
JP4366731B2 true JP4366731B2 (ja) 2009-11-18

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JP25637698A Expired - Fee Related JP4366731B2 (ja) 1998-09-10 1998-09-10 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002203972A (ja) * 2001-01-05 2002-07-19 Matsushita Electric Ind Co Ltd 薄膜トランジスタアレイとそれを用いた液晶表示装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710224A (en) * 1980-06-23 1982-01-19 Nec Corp Forming method for silicone single crystalline film
JPS5868923A (ja) * 1981-10-19 1983-04-25 Nippon Telegr & Teleph Corp <Ntt> 結晶薄膜の製造方法
JPH02106034A (ja) * 1988-10-14 1990-04-18 Sanyo Electric Co Ltd Ｓｏｉ構造の形成方法
JPH0760807B2 (ja) * 1990-03-29 1995-06-28 株式会社ジーティシー 半導体薄膜の製造方法
JP2967126B2 (ja) * 1990-09-05 1999-10-25 セイコーインスツルメンツ株式会社 平板型光弁基板用半導体集積回路装置
JP3120879B2 (ja) * 1991-11-08 2000-12-25 キヤノン株式会社 アクティブマトリクス型液晶表示素子の駆動用半導体装置の製造方法
JP3276168B2 (ja) * 1992-05-21 2002-04-22 ローム株式会社 薄膜ｓｏｉ基板の製法
JPH07235488A (ja) * 1994-02-24 1995-09-05 Toshiba Corp 半導体層の形成方法

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