JP2000089250A5 - - Google Patents

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Publication number
JP2000089250A5
JP2000089250A5 JP1998256376A JP25637698A JP2000089250A5 JP 2000089250 A5 JP2000089250 A5 JP 2000089250A5 JP 1998256376 A JP1998256376 A JP 1998256376A JP 25637698 A JP25637698 A JP 25637698A JP 2000089250 A5 JP2000089250 A5 JP 2000089250A5
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JP
Japan
Prior art keywords
substrate
forming
single crystal
gate type
electro
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JP1998256376A
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English (en)
Japanese (ja)
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JP2000089250A (ja
JP4366731B2 (ja
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Priority to JP25637698A priority Critical patent/JP4366731B2/ja
Priority claimed from JP25637698A external-priority patent/JP4366731B2/ja
Publication of JP2000089250A publication Critical patent/JP2000089250A/ja
Publication of JP2000089250A5 publication Critical patent/JP2000089250A5/ja
Application granted granted Critical
Publication of JP4366731B2 publication Critical patent/JP4366731B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP25637698A 1998-09-10 1998-09-10 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法 Expired - Fee Related JP4366731B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25637698A JP4366731B2 (ja) 1998-09-10 1998-09-10 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25637698A JP4366731B2 (ja) 1998-09-10 1998-09-10 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法

Publications (3)

Publication Number Publication Date
JP2000089250A JP2000089250A (ja) 2000-03-31
JP2000089250A5 true JP2000089250A5 (enExample) 2005-10-27
JP4366731B2 JP4366731B2 (ja) 2009-11-18

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ID=17291834

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25637698A Expired - Fee Related JP4366731B2 (ja) 1998-09-10 1998-09-10 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法

Country Status (1)

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JP (1) JP4366731B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002203972A (ja) * 2001-01-05 2002-07-19 Matsushita Electric Ind Co Ltd 薄膜トランジスタアレイとそれを用いた液晶表示装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710224A (en) * 1980-06-23 1982-01-19 Nec Corp Forming method for silicone single crystalline film
JPS5868923A (ja) * 1981-10-19 1983-04-25 Nippon Telegr & Teleph Corp <Ntt> 結晶薄膜の製造方法
JPH02106034A (ja) * 1988-10-14 1990-04-18 Sanyo Electric Co Ltd Ｓｏｉ構造の形成方法
JPH0760807B2 (ja) * 1990-03-29 1995-06-28 株式会社ジーティシー 半導体薄膜の製造方法
JP2967126B2 (ja) * 1990-09-05 1999-10-25 セイコーインスツルメンツ株式会社 平板型光弁基板用半導体集積回路装置
JP3120879B2 (ja) * 1991-11-08 2000-12-25 キヤノン株式会社 アクティブマトリクス型液晶表示素子の駆動用半導体装置の製造方法
JP3276168B2 (ja) * 1992-05-21 2002-04-22 ローム株式会社 薄膜ｓｏｉ基板の製法
JPH07235488A (ja) * 1994-02-24 1995-09-05 Toshiba Corp 半導体層の形成方法

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