JP4356943B2 - 基板処理装置及び半導体装置の製造方法 - Google Patents

基板処理装置及び半導体装置の製造方法 Download PDF

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Publication number
JP4356943B2
JP4356943B2 JP2005513684A JP2005513684A JP4356943B2 JP 4356943 B2 JP4356943 B2 JP 4356943B2 JP 2005513684 A JP2005513684 A JP 2005513684A JP 2005513684 A JP2005513684 A JP 2005513684A JP 4356943 B2 JP4356943 B2 JP 4356943B2
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Japan
Prior art keywords
valve
gas supply
source gas
supply line
substrate processing
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Expired - Fee Related
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JP2005513684A
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Japanese (ja)
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JPWO2005024926A1 (ja
Inventor
優幸 浅井
貞義 堀井
秀治 板谷
敦 佐野
英博 野内
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Hitachi Kokusai Electric Inc
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Hitachi Kokusai Electric Inc
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Publication of JPWO2005024926A1 publication Critical patent/JPWO2005024926A1/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512—Premixing before introduction in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
JP2005513684A 2003-09-05 2004-09-03 基板処理装置及び半導体装置の製造方法 Expired - Fee Related JP4356943B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003313879 2003-09-05
JP2003313879 2003-09-05
PCT/JP2004/012855 WO2005024926A1 (fr) 2003-09-05 2004-09-03 Dispositif de traitement de substrat et procede pour la production de dispositifs a semi-conducteur

Publications (2)

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JPWO2005024926A1 JPWO2005024926A1 (ja) 2007-11-08
JP4356943B2 true JP4356943B2 (ja) 2009-11-04

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Family Applications (1)

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JP2005513684A Expired - Fee Related JP4356943B2 (ja) 2003-09-05 2004-09-03 基板処理装置及び半導体装置の製造方法

Country Status (2)

Country Link
JP (1) JP4356943B2 (fr)
WO (1) WO2005024926A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103928284A (zh) * 2013-01-15 2014-07-16 中微半导体设备(上海)有限公司 气体传输装置及其气体分流装置的测试方法
KR101552532B1 (ko) 2014-03-18 2015-09-11 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체
KR20210124173A (ko) * 2020-04-03 2021-10-14 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007113041A (ja) * 2005-10-19 2007-05-10 Hitachi Kokusai Electric Inc 基板処理装置
JP5219562B2 (ja) * 2007-04-02 2013-06-26 株式会社日立国際電気 基板処理装置、基板処理方法及び半導体装置の製造方法
US8235001B2 (en) 2007-04-02 2012-08-07 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method for manufacturing semiconductor device
JP5748523B2 (ja) * 2011-03-30 2015-07-15 エドワーズ株式会社 除害装置
JP5885870B2 (ja) * 2015-04-06 2016-03-16 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体
JP6902991B2 (ja) 2017-12-19 2021-07-14 株式会社日立ハイテク プラズマ処理装置
JP7407521B2 (ja) * 2019-04-26 2024-01-04 東京エレクトロン株式会社 成膜方法及び成膜装置
WO2022244041A1 (fr) * 2021-05-17 2022-11-24 株式会社日立ハイテク Dispositif de traitement au plasma

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02284638A (ja) * 1989-04-26 1990-11-22 Tadahiro Omi 高性能プロセスガス供給装置
JPH09148257A (ja) * 1995-11-29 1997-06-06 Sumitomo Electric Ind Ltd 原料供給装置
JP2002339071A (ja) * 2001-05-18 2002-11-27 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude Ａｌｃｖｄシステムにおける処理ガス供給機構

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103928284A (zh) * 2013-01-15 2014-07-16 中微半导体设备(上海)有限公司 气体传输装置及其气体分流装置的测试方法
CN103928284B (zh) * 2013-01-15 2016-04-06 中微半导体设备(上海)有限公司 气体传输装置及其气体分流装置的测试方法
KR101552532B1 (ko) 2014-03-18 2015-09-11 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체
KR20210124173A (ko) * 2020-04-03 2021-10-14 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
KR102560323B1 (ko) 2020-04-03 2023-07-28 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법

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Publication number Publication date
WO2005024926A1 (fr) 2005-03-17
JPWO2005024926A1 (ja) 2007-11-08

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