JP2006506811A - 汎用金属送出源(gmds)を提供し、汎用金属送出源を原子層堆積(ald)と一体化する方法および装置 - Google Patents
汎用金属送出源(gmds)を提供し、汎用金属送出源を原子層堆積(ald)と一体化する方法および装置 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
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Abstract
Description
Claims (21)
- 揮発性金属化合物をガスの形態で処理装置に送出する汎用金属送出源であって、
固体金属原料物質を保持し、処理装置に接続され、揮発性金属化合物を前記処理装置に送出する出口を有する反応室と、
前記固体金属原料物質を加熱する、反応室内の原料加熱器と、
反応性ガスを供給するガス源と、
ガス種を反応室に送出する、ガス源から反応室へのガス送出導管と、
ガス送出導管に接続する解離装置とを備え、
解離装置は、反応性ガス分子を解離し、反応室に少なくとも1つの単原子反応種を供給し、単原子反応種は、加熱された固体金属原料物質からの金属と化合し、揮発性金属化合物を形成する汎用金属送出源。 - ガス送出導管および反応室は、共通の石英配管を備える請求項1に記載の汎用金属送出源。
- ガス源は、反応性ガスの高速パルスが反応室に供給されるように弁で調節され、それによって、反応室出口において揮発性金属化合物の高速パルスを供給する請求項1に記載の汎用金属送出源。
- 解離装置はプラズマ発生器を備える請求項1に記載の汎用金属送出源。
- プラズマ発生装置はヘリカル共振器を備える請求項1に記載の汎用金属送出源。
- 固体金属原料物質はタンタルであり、反応性ガスは塩素である請求項1に記載の汎用金属送出源。
- 反応室の出口に揮発性金属化合物を供給する方法であって、
(a)ガス源からの反応性ガスを、固体金属原料を保持する加熱された反応室に接続されるガス送出導管内に流す工程と、
(b)流れる反応性ガス内でプラズマを衝突させ、それによって、反応性ガスの少なくとも1つの単原子種を形成する工程と、
(c)加熱された金属原料と少なくとも1つの単原子反応性ガスとの間の化学反応を通して、反応室内に揮発性金属化合物を形成する工程と、
(d)反応室の出口で揮発性金属化合物を送出する工程とを含む方法。 - 反応室およびガス送出導管は、共通の石英配管を備える請求項7に記載の方法。
- ガス源は、反応性ガスの高速パルスが反応室に供給されるように弁で調節され、それによって、反応室出口において揮発性金属化合物の高速パルスを供給する請求項7に記載の方法。
- プラズマ発生装置はヘリカル共振器を備える請求項7に記載の方法。
- 固体金属原料物質はタンタルであり、反応性ガスは塩素である請求項7に記載の方法。
- 処理システムであって、
プロセス堆積室内で基板を支持する加熱された火床と、
後続の処理のために、基板を交換する装置と、
コーティング室へ前駆体として揮発性金属化合物を送出する入口ポートと、
入口ポートに接続される汎用金属送出源とを備え、汎用金属送出源は、
固体金属原料物質を保持し、前記コーティング室に揮発性金属化合物を送出する出口を有する反応室と、
前記固体金属原料物質を加熱する、反応室内の加熱器と、
反応性ガスを供給するガス源と、
ガス種を反応室に送出する、ガス源から反応室へのガス送出導管と、
ガス送出導管に接続されるプラズマ発生装置とを備え、
プラズマ発生装置は、反応性ガス分子を解離し、反応室に少なくとも1つの単原子反応種を供給し、単原子反応種は、加熱された固体金属原料物質からの金属と化合し、コーティング室に送出される揮発性金属化合物を形成する処理システム。 - ガス送出導管および反応室は、共通の石英配管を備える請求項12に記載の処理システム。
- ガス源は、反応性ガスの高速パルスが反応室に供給されるように弁で調節され、それによって、反応室出口において揮発性金属化合物の高速パルスを供給する請求項12に記載の処理システム。
- プラズマ発生装置はヘリカル共振器を備える請求項12に記載の処理システム。
- 固体金属原料物質はタンタルであり、反応性ガスは塩素である請求項12に記載の処理システム。
- 化学気相堆積用に構成され、かつ、化学気相堆積に専用である請求項12に記載の処理システム。
- 原子層堆積用に構成され、かつ、原子層堆積に専用である請求項12に記載の処理システム。
- 化学気相堆積(CVD)システムであって、
CVD処理のための前駆体として揮発性金属化合物を送出する入口ポートと、
入口ポートに接続される汎用金属送出源とを備え、汎用金属送出源は、固体金属原料物質を保持し、前記コーティング室に揮発性金属化合物を送出する出口を有する反応室と、前記固体金属原料物質を加熱する、反応室内の加熱器と、反応性ガスを供給するガス源と、ガス種を反応室に送出する、ガス源から反応室へのガス送出導管と、ガス送出導管に接続する解離装置とを備え、
プラズマ発生装置は、反応性ガス分子を解離し、反応室に少なくとも1つの単原子反応種を供給し、単原子反応種は、加熱された固体金属原料物質からの金属と化合し、入口ポートに送出される揮発性金属化合物を形成する化学気相堆積システム。 - 原子層堆積(ALD)システムであって、
ALD処理のための前駆体として揮発性金属化合物を繰り返し送出する入口ポートと、
入口ポートに接続される汎用金属送出源とを備え、汎用金属送出源は、固体金属原料物質を保持し、前記コーティング室に揮発性金属化合物を送出する出口を有する反応室と、前記固体金属原料物質を加熱する、反応室内の加熱器と、反応性ガスを供給するガス源と、ガス種を反応室に送出する、ガス源から反応室へのガス送出導管と、ガス送出導管に接続する解離装置とを備え、
プラズマ発生装置は、反応性ガス分子を解離し、反応室に少なくとも1つの単原子反応種を供給し、単原子反応種は、加熱された固体金属原料物質からの金属と化合し、入口ポートに送出される揮発性金属化合物を形成する原子層堆積システム。 - 反応室の出口に揮発性金属化合物を供給する装置であって、
ガス源からの反応性ガスを、固体金属材料を保持する加熱された反応室に接続されるガス送出導管内に流す手段と、
流れる反応性ガス内でプラズマを衝突させる手段であって、それによって、反応性ガスの少なくとも1つの単原子種を形成する、衝突させる手段と、
加熱された金属材料と少なくとも1つの単原子反応性ガスとの間の化学反応を通して、反応室内に揮発性金属化合物を形成する手段と、
反応室の出口で揮発性金属化合物を送出する手段とを含む装置。
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US10/295,614 US6863021B2 (en) | 2002-11-14 | 2002-11-14 | Method and apparatus for providing and integrating a general metal delivery source (GMDS) with atomic layer deposition (ALD) |
PCT/US2003/035768 WO2004044957A2 (en) | 2002-11-14 | 2003-11-10 | Method and apparatus for providing and integrating a general metal delivery source (gmds) with atomic layer deposition (ald) |
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JP2006506811A true JP2006506811A (ja) | 2006-02-23 |
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JP2004551983A Pending JP2006506811A (ja) | 2002-11-14 | 2003-11-10 | 汎用金属送出源(gmds)を提供し、汎用金属送出源を原子層堆積(ald)と一体化する方法および装置 |
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US (2) | US6863021B2 (ja) |
EP (1) | EP1560945A2 (ja) |
JP (1) | JP2006506811A (ja) |
KR (1) | KR20050063807A (ja) |
AU (1) | AU2003290694A1 (ja) |
WO (1) | WO2004044957A2 (ja) |
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WO2007058120A1 (ja) * | 2005-11-18 | 2007-05-24 | Hitachi Kokusai Electric Inc. | 半導体装置の製造方法および基板処理装置 |
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KR20210135341A (ko) | 2012-05-31 | 2021-11-12 | 엔테그리스, 아이엔씨. | 배취식 침착을 위한 고 물질 플럭스를 갖는 유체의 소스 시약-기반 수송 |
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- 2003-11-10 WO PCT/US2003/035768 patent/WO2004044957A2/en not_active Application Discontinuation
- 2003-11-10 AU AU2003290694A patent/AU2003290694A1/en not_active Abandoned
- 2003-11-10 EP EP03783276A patent/EP1560945A2/en not_active Withdrawn
- 2003-11-10 KR KR1020057008594A patent/KR20050063807A/ko not_active Application Discontinuation
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WO2007058120A1 (ja) * | 2005-11-18 | 2007-05-24 | Hitachi Kokusai Electric Inc. | 半導体装置の製造方法および基板処理装置 |
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AU2003290694A8 (en) | 2004-06-03 |
US20040094093A1 (en) | 2004-05-20 |
KR20050063807A (ko) | 2005-06-28 |
US6863021B2 (en) | 2005-03-08 |
US20050103269A1 (en) | 2005-05-19 |
WO2004044957A3 (en) | 2004-10-07 |
AU2003290694A1 (en) | 2004-06-03 |
WO2004044957A2 (en) | 2004-05-27 |
EP1560945A2 (en) | 2005-08-10 |
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