WO2005024926A1 - Dispositif de traitement de substrat et procede pour la production de dispositifs a semi-conducteur - Google Patents

Dispositif de traitement de substrat et procede pour la production de dispositifs a semi-conducteur

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Publication number
WO2005024926A1
WO2005024926A1 PCT/JP2004/012855 JP2004012855W WO2005024926A1 WO 2005024926 A1 WO2005024926 A1 WO 2005024926A1 JP 2004012855 W JP2004012855 W JP 2004012855W WO 2005024926 A1 WO2005024926 A1 WO 2005024926A1
Authority
WO
WIPO (PCT)
Prior art keywords
valve
source gas
gas supply
inert gas
supply line
Prior art date
Application number
PCT/JP2004/012855
Other languages
English (en)
Japanese (ja)
Inventor
Masayuki Asai
Sadayoshi Horii
Hideharu Itatani
Atsushi Sano
Hidehiro Yanai
Original Assignee
Hitachi Kokusai Electric Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc. filed Critical Hitachi Kokusai Electric Inc.
Priority to JP2005513684A priority Critical patent/JP4356943B2/ja
Publication of WO2005024926A1 publication Critical patent/WO2005024926A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512—Premixing before introduction in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles

Definitions

  • the present invention relates to a substrate processing apparatus for processing a substrate such as a semiconductor wafer and a method for manufacturing a semiconductor device (semiconductor device).
  • One of semiconductor manufacturing processes includes a CVD (Chemical Vapor D mark osition) process of performing a predetermined film forming process on the surface of a substrate.
  • the substrate refers to a substrate on which a fine electric circuit pattern based on a silicon wafer, glass, or the like is formed.
  • a substrate is loaded into an airtight reaction chamber, the substrate is heated by a heating means provided in the chamber, and a chemical reaction occurs while introducing a reaction gas onto the substrate, thereby forming a fine electric circuit pattern on the substrate. It forms a thin film uniformly.
  • the reaction gas is supplied through a film forming gas supply pipe 8 connected to the shower plate 2, and is introduced onto the substrate 3 via a shower hole 6 provided in the shower plate 2.
  • a part of the film-forming gas introduced onto the substrate 3 is used for depositing a predetermined CVD thin film by causing a decomposition reaction, an adsorption reaction, or a bonding reaction by thermal energy from the substrate.
  • residual gas and by-products of the film forming gas are exhausted through the exhaust pipe 7.
  • the substrate 3 is heated by the heater 5 provided below the susceptor 4.
  • HfO hafnium oxide film
  • HfSif hafnium silicate film
  • Traxie hafnium abbreviated as Hf_ ⁇ tBu
  • Hf [ ⁇ C (CH) CH ⁇ CH] tetrakis (1_methoxy
  • Hf-MMP 2-methyl-2-propoxy hafnium
  • Hf [ ⁇ -Si- (CH 2)] HfCl etc.
  • Si-MMP Methoxy-1-methyl-2-propoxy
  • Si ( ⁇ C H) abbreviation TEOS
  • Organic Si metal raw materials such as are used. This organic Si metal raw material is used by being mixed with the above organic Hf metal material.
  • organometallic materials are liquid or solid at normal temperature and normal pressure in order to ensure easy transportation and supply. For this reason, most raw materials are heated and raised in vapor pressure to be converted into gas for use.
  • FIG. 12 is a configuration diagram of a typical conventional MOCVD apparatus.
  • the liquid raw material 9 filled in the film forming raw material container 10 is pushed by an inert gas under pressure from an inert gas inlet 11 and guided to a vaporizer 13 via a liquid supply pipe 12.
  • the liquid raw material is heated by a heater disposed inside the vaporizer 13 and is converted from liquid to gas. In this way, the liquid source 9 becomes a film forming gas, and is guided to the gas supply control pipe 15 through the vaporized gas supply pipe 14.
  • the film formation gas is guided to the film formation gas supply pipe 8.
  • the film formation gas is led to the bypass pipe 16. Regardless of which route the film forming gas passes through, the film forming gas is guided to the exhaust treatment device 17 via the exhaust pipe 7 and is subjected to the exhaust treatment.
  • the gas supply control pipe 15 includes a valve 31, a valve 32, and a dilution gas supply pipe 19, as shown in FIG.
  • the valve 31 is provided in a bypass pipe 16 branched from the vaporized gas supply pipe 14.
  • the valve 32 is provided on the film forming gas supply pipe 8 communicating with the vaporized gas supply pipe 14.
  • the dilution gas supply pipe 19 is provided in the film formation gas supply pipe 8 downstream of the valve 32.
  • the gas control pipe 15 controls the opening / closing of the valves 31 and 32 to control whether or not to form a film.
  • the diluent gas is introduced from the diluent gas inlet 20 regardless of whether or not to form a film, and is always supplied to the reaction chamber via the diluent gas supply pipe 19. By constantly supplying a diluting gas to the reaction chamber, pressure fluctuations in the reaction chamber due to opening and closing of the valves 31 and 32 are suppressed, and the deposition gas is diluted to reduce the deposition rate of the thin film Or control the degree.
  • FIG. 9 shows a state in which the film forming gas is flown into the bypass pipe 16 by using the conventional gas supply control pipe 15, that is, a state in which the film formation is stopped.
  • the valve 31 is open and the valve 32 is closed.
  • the piping in which the film forming gas exists is indicated by a thick line.
  • the pipes indicated by thick lines also indicate that a film forming gas is present.
  • FIG. 10 shows a state in which the film formation is stopped, the state in which the film formation gas is supplied to the film formation gas supply pipe 8 by using the gas supply control pipe 15, that is, the state in which the film formation is started, is shifted. expressed.
  • the valve 31 is closed and the valve 32 is open, and a film forming gas is introduced into the reaction chamber, and a film is formed.
  • FIG. 11 shows a state in which the state is shifted from this state to the state at the moment when the film formation is stopped.
  • the valve 31 is open and the valve 32 is closed.
  • the dead space 18 refers to a portion between the valve 32 in the film forming gas supply pipe 8 and the dilution gas supply point. Therefore, in the gas supply control pipe 15 having the conventional structure, the state of stopping the film formation becomes ambiguous, and it is difficult to stop the film formation immediately and completely. For this reason, conventionally, the deposited film thickness of the thin film fluctuates, and it is difficult to obtain uniformity of the film thickness in the substrate surface.
  • the present invention solves the conventional problem that it is difficult to purge a deposition gas staying in a dead space, and improves the reproducibility, in-plane uniformity, and composition uniformity of a thin film formed on a substrate.
  • An object of the present invention is to provide a substrate processing apparatus and a semiconductor device manufacturing method which can be improved. It has been the target.
  • the first invention is directed to a reaction chamber for processing at least a substrate, a source gas supply unit for supplying a source gas into the reaction chamber, and a source connecting the reaction chamber and the source gas supply unit.
  • a substrate processing apparatus comprising: a first inert gas supply line that supplies an inert gas into a raw gas supply line between a first valve and the second valve.
  • a film forming gas supply line near the first valve ( A dead space) and a film forming gas that is retained in a film forming gas supply line (dead space) near the second vanoleb can be flushed with an inert gas. Therefore, it is possible to effectively purge the deposition gas staying in the dead space.
  • the first valve when processing the substrate in the reaction chamber, the first valve is opened, the second valve is opened, and the third valve is closed. After that, close the first valve, open the second valve, open the third valve, and then open the first valve, close the second valve, open the third valve.
  • a substrate processing apparatus characterized by having control means for controlling the substrate processing.
  • a source gas is supplied into the reaction chamber to form a film.
  • the first valve is closed, the second valve is opened, and the third valve is opened, the source gas is exhausted from the bypass line so as to bypass the reaction chamber, and the film formation is stopped.
  • the deposition gas staying in the dead space near the second valve is flushed into the reaction chamber.
  • the first valve is opened, the second valve is closed, and the third valve is opened, the deposition gas staying in the dead space near the first valve is exhausted from the bypass line. Therefore, stop film formation The later ambiguous state is eliminated, and the film formation can be stopped immediately.
  • a third aspect based on the second aspect, after the substrate processing, the first valve is closed, the second valve is opened, and the third valve is opened.
  • An operation of opening, closing the second valve, and opening the third valve is a substrate processing apparatus having control means for controlling the operation to be repeated a plurality of times.
  • the first valve is closed, the second valve is opened, and the third valve is opened.
  • the first valve is opened, the second valve is closed, and the third valve is opened. Is repeated several times, the purging effect is enhanced, and even when the source gas remains in the film forming gas supply line, the degree of dilution of the source gas is increased to increase the concentration of the source gas.
  • the force S can be reduced.
  • the source gas supply unit is configured to always supply a constant flow rate of the source gas to the source gas supply line at least during and after the substrate processing.
  • the substrate processing apparatus is characterized in that:
  • the source gas can be supplied stably.
  • the first inert gas supply line is configured to always supply a constant flow rate of the inert gas at least during the substrate processing and after the substrate processing.
  • the substrate processing apparatus is characterized in that:
  • a sixth invention is characterized in that, in the first invention, a second inert gas supply line for supplying an inert gas into a source gas supply line downstream of the second valve is provided. Is a substrate processing apparatus.
  • the pressure in the reaction chamber is adjusted by adjusting the flow rate of the second inert gas. Variations can be suppressed.
  • the supply flow rate of the source gas supplied from the source gas supply unit and the supply flow rate of the inert gas supplied from the first inert gas supply line are different from each other.
  • a substrate processing apparatus characterized in that the supply flow rate of the inert gas supplied to the second inert gas supply line is made variable while being constant.
  • the supply flow rate of the source gas supplied from the source gas supply unit and the supply flow rate of the inert gas supplied from the first inert gas supply line are fixed, and the inert flow supplied from the second inert gas supply line is maintained.
  • the gas supply flow variable it is possible to adjust the total gas flow introduced into the reaction chamber (total flow of the raw material gas and the inert gas) to be always constant, and to suppress pressure fluctuations in the reaction chamber be able to.
  • the total flow rate of the source gas and the inert gas supplied into the reaction chamber is constant before, during, and after the substrate processing.
  • a substrate processing apparatus comprising a control unit for adjusting a supply flow rate of an inert gas flowing from a second inert gas supply line.
  • the first valve before processing the substrate in the reaction chamber, the first valve is opened, the second valve is closed, the third valve is opened, and the substrate is removed.
  • the first valve is opened, the second valve is opened, and the third valve is closed.
  • the first valve is closed, the second valve is opened, and the third valve is opened.
  • a substrate processing apparatus characterized by having control means for controlling a valve to be opened, a first valve to be opened, a second valve to be closed, and a third valve to be opened thereafter.
  • each valve By controlling each valve as in the present invention, it is possible to remove the film-forming gas staying in the dead space near the first valve and near the second valve, and before, during, and after the substrate processing. After that, pressure fluctuation in the reaction chamber can be suppressed.
  • the present invention is particularly concerned with the fact that the lighter the source material, the more the source material adheres to the center of the substrate, the more likely it is for the phenomenon to occur. According to the method, any type of residual gas remaining in the dead space can be effectively purged, so that such a phenomenon can be effectively prevented, and the composition uniformity in the substrate surface can be improved.
  • a step of processing the substrate a step of exhausting the source gas from the bypass line provided to branch off from the source gas supply line before or after the substrate processing so as to bypass the reaction chamber, and a step of processing the substrate.
  • Discharging the source gas from the bypass line after the substrate processing wherein the step of discharging the source gas from the bypass line after the substrate processing is performed on a downstream side of a branch point of the source gas supply line with the bypass line.
  • the first valve is closed, the second valve provided downstream of the first valve of the source gas supply line is opened, and the third valve provided in the bypass line is opened. And in a state, a method of manufacturing a semiconductor device comprising a call including a first valve and a step of supplying a raw material gas supply line in the inert gas between the second valve.
  • the first valve is closed, the second valve is opened, and the third valve is opened. Since the inert gas is supplied into the source gas supply line between the second valve and the source valve, the source gas is exhausted from the bypass line and the source gas remaining in the source gas supply line downstream of the second valve is purged. be able to.
  • the step of exhausting the source gas from the bypass line after the substrate processing further comprises opening the first valve, closing the second valve, and closing the third valve.
  • the first valve In the step of exhausting the source gas from the bypass line after the substrate processing, the first valve is opened, the second valve is closed, and the third valve is opened. Since the inert gas is supplied into the source gas supply line between the first valve and the inert gas supply point, the source gas is exhausted from the bypass line and stays in the source gas supply line between the first valve and the inert gas supply point. Source gas can be purged.
  • the step of exhausting the source gas from the bypass line after the substrate processing is performed by closing the first valve, opening the second valve, and removing the third valve.
  • the step of supplying an inert gas into the source gas supply line between the first valve and the second valve while the third valve is open is repeated a plurality of times. This is a method of manufacturing a semiconductor device.
  • the first valve is closed, the second valve is opened, and the third valve is opened.
  • the first valve is opened, the second valve is closed, and the third valve is opened. Is repeated several times, the purging effect is enhanced, and even when the source gas remains in the film forming gas supply line, the degree of dilution of the source gas is increased to increase the concentration of the source gas.
  • the force S can be reduced.
  • the step of exhausting the source gas from the bypass line after the substrate processing includes closing the first valve, opening the second valve, and removing the third valve.
  • the source gas retained in the source gas supply line downstream of the second valve can be purged. Further, in the step of causing the inert gas to flow toward the first valve, the source gas remaining in the source gas supply line between the first valve and the inert gas supply point is purged. it can. Therefore, the source gas retained in the source gas supply line is effectively purged.
  • At least the step of processing the substrate and the step of exhausting the source gas from the bypass line before or after the substrate processing are always performed at a constant flow rate from the source gas supply unit.
  • a method for manufacturing a semiconductor device comprising continuously supplying a source gas to a source gas supply line.
  • the source gas can be supplied stably.
  • At least the step of processing the substrate and the step of exhausting the source gas from the bypass line before or after the substrate processing are performed by the first valve and the second valve.
  • a method for manufacturing a semiconductor device characterized in that a constant flow of an inert gas is continuously supplied into a source gas supply line between the semiconductor device and the valve.
  • a method of manufacturing a semiconductor device comprising: a step of supplying an inert gas into a source gas supply line between a first valve and a second valve while the valve is open. Even before the substrate processing, the first valve is opened, the second valve is closed, and the third valve is opened in the step of exhausting the source gas from the no-pass line.
  • the source gas between the first valve and the inert gas supply point is discharged while exhausting the source gas from the nozzle line.
  • the source gas retained in the gas supply line can be purged.
  • the supply flow rate of the source gas supplied from the source gas supply unit, the first valve and the The supply flow rate of the inert gas supplied into the source gas supply line between the second valve and the second valve is always kept constant, and the total flow rate of the source gas and the inert gas supplied into the reaction chamber is always kept constant.
  • the raw material gas supplied into the reaction chamber via the raw material gas supply line includes at least two types of raw material gas or a mixed gas of at least two types of raw material gas.
  • a method for manufacturing a semiconductor device comprising:
  • the present invention is particularly concerned with the fact that the lighter the source material, the more the source material adheres to the center of the substrate, the more likely it is for the phenomenon to occur. According to the method, any type of residual gas remaining in the dead space can be effectively purged, so that such a phenomenon can be effectively prevented, and the composition uniformity in the substrate surface can be improved. .
  • the present invention it is possible to effectively purge a film formation gas staying in a dead space by flushing it with an inert gas. For this reason, the variation in the deposited film thickness of the thin film can be suppressed, and the reproducibility of the thin film formed on the substrate and the uniformity of the film thickness and composition in the substrate surface can be improved. Since there is no dead space where the deposition gas stays, it is possible to suppress the generation of particles due to the self-decomposition of the deposition gas.
  • the HfO film which is particularly an amorphous HfO film, is formed by using the CVD method, more specifically, the MOCVD method.
  • FIG. 1 is a schematic diagram showing an example of a single-wafer MOCVD apparatus in which a remote plasma unit as a substrate processing apparatus according to an embodiment is incorporated.
  • Single wafer MOCVD equipment is configured to process at least one substrate.
  • a hollow heater unit 180 is provided in the reaction chamber 100.
  • the heater unit 180 has an upper opening covered by a susceptor 200 as a substrate holding means. .
  • a heater 300 power S is provided inside the heater unit 180 as a calorie heating means.
  • the substrate 400 mounted on the susceptor 200 can be heated by the heater 300.
  • the heater 300 is controlled by the temperature control means 51 so that the temperature of the substrate 400 becomes a predetermined temperature.
  • the substrate 400 mounted on the susceptor 200 is, for example, a semiconductor silicon wafer, a glass substrate, or the like.
  • a substrate rotation unit 120 as a rotation unit is provided outside the reaction chamber 100.
  • the heater unit 180 in the reaction chamber 100 is rotated by the substrate rotating unit 120 so that the substrate 400 on the susceptor 200 can be rotated.
  • the reason why the substrate 400 is rotated is that processing on the substrate in a film forming step and a reforming step, which will be described later, is quickly and uniformly performed on the substrate surface.
  • the substrate rotation unit 120 is controlled by the drive control means 54.
  • a shower head 600 having a large number of holes 800 is provided above the susceptor 200 in the reaction chamber 100.
  • a raw material supply pipe 500 for supplying a film forming gas and a radical supply pipe 130 for supplying radicals are commonly connected to the shower head 600, so that the film forming gas or radicals are supplied to the shower head 600 in a shower-like reaction chamber. It can squirt into 100.
  • the shower head 600 constitutes the same supply port for supplying a film formation gas supplied to the substrate 400 in the film formation step and a radical supplied to the substrate 400 in the modification step.
  • a raw material supply unit 900 for supplying an organic liquid raw material as a film forming raw material to the outside of the reaction chamber 100, a liquid flow control device 280 as flow control means for controlling a liquid supply flow rate of the film forming raw material, A vaporizer 290 for vaporizing the film raw material is provided.
  • an inert gas supply unit 10a for supplying an inert gas as a diluting gas, mass flow controllers 460a and 460b as flow control means for controlling a supply flow rate of the inert gas, and a force S are provided.
  • the mass flow controllers 460a and 460b are provided in the first inert gas supply pipe 23 and the second inert gas supply pipe 24 connected to the inert gas supply unit 10a, respectively.
  • Hf— (MMP) or the like is used as the organic liquid raw material.
  • Ar Ar
  • the raw material gas supply pipe 5b provided in the raw material supply unit 900, the first inert gas supply pipe 23 provided in the inert gas supply unit 10a, and the second inert gas supply pipe 24 are provided.
  • a single raw material supply pipe 500 connected to the shower head 600 is provided.
  • the raw material supply pipe 500 is formed in the shower head 600 in a film forming process for forming an Hf ⁇ film on the substrate 400.
  • a mixed gas of a film gas and an inert gas is supplied.
  • the source gas supply pipe 5b and the inert gas supply pipes 23 and 24 are both connected to a gas supply control pipe 36.
  • the gas supply control pipe 36 has a function of controlling whether or not to form a film, and will be described in detail later.
  • the supply of the mixed gas of the film forming gas and the inert gas can be controlled by the gas supply control pipe 36.
  • the source gas supply line is composed of the source gas supply pipe 5b and the source gas supply pipe 500 described above. Further, the first inert gas supply line 23 and the second inert gas supply line 24 constitute a first inert gas supply line and a second inert gas supply line, respectively.
  • a reactant activating unit (remote plasma unit) 110 serving as a plasma source for activating a gas by plasma to form radicals as a reactant is provided outside the reaction chamber 100.
  • Radicals used in the reforming step described below are used as raw materials such as Hf— (MMP).
  • an oxygen radical is preferable. This is because oxygen radicals can efficiently remove impurities such as C and H immediately after HfO film formation.
  • the radical used in the self-cleaning step described later is preferably a C1F radical.
  • oxygen-containing gas O, N ⁇ , NO, etc.
  • RPO remote plasma oxidation
  • a gas supply pipe 370 is provided upstream of the reactant activation unit 110.
  • the gas supply pipe 370 has an oxygen supply unit 470 for supplying oxygen (O 2), and a plasma is generated.
  • Ar supply unit 480 for supplying gaseous argon (Ar) and chlorine fluoride (C1F)
  • Supply C1F supply units 490 are connected via supply pipes 520, 530, and 540, respectively.
  • Supply pipes 520, 530, 540 connected to oxygen supply unit 470, Ar supply unit 480, and C1F supply unit 490
  • Supply pipes 520, 530, and 540 are provided with vanolebs 580, 590, and 600, respectively, and by opening and closing these vanolebs 580, 590, and 600, O
  • a radial supply pipe 130 connected to the shower head 600 is provided downstream of the reactant activation unit 110, and oxygen (O 2) is supplied to the shower head 600 in the reforming step or the self-cleaning step.
  • oxygen (O 2) is supplied to the shower head 600 in the reforming step or the self-cleaning step.
  • a valve 240 is provided in the radical supply pipe 130, and the supply of radicals can be controlled by opening and closing the valve 240.
  • An exhaust port 7a is provided in the reaction chamber 100, and an exhaust pipe 700 is connected to the exhaust port 7a.
  • the exhaust pipe 700 is provided with a pressure regulator 61 for controlling the pressure in the reaction chamber 100 and a material recovery trap 160 for recovering a film forming material. This raw material recovery trap 160 is used commonly for the film forming step, the reforming step, and the self-cleaning step.
  • the exhaust pipe 700 is further provided with a vacuum pump 62 and an abatement device 63 as an exhaust device.
  • the exhaust port 7a and the exhaust pipe 700 constitute an exhaust line.
  • a source gas bypass pipe 14 a and a radical bypass pipe 14 b connected to a source recovery trap 160 provided in the exhaust pipe 700 are respectively branched and connected to the source gas supply pipe 5 b and the radical supply pipe 130.
  • the valve 33 described above is provided on the raw material gas bypass pipe 14a, and the valve 230 is provided on the radical bypass pipe 14b.
  • the radicals used in the reforming step are supplied to the reaction chamber 100 without stopping the supply.
  • the gas is exhausted through the radial bypass pipe 14b and the raw material recovery trap 160 so as to bypass the air.
  • the source gas bypass pipe 14a and the source recovery trajectory are used to bypass the reaction chamber 100 without stopping the supply of the film forming gas used in the film forming step. Exhaust through top 160.
  • bypass line is connected to the above-described raw material gas bypass pipe 14a and the radical bypass pipe 14b. Is configured.
  • the single-wafer MOCVD apparatus is provided with a control device 250.
  • the control device 250 includes a film forming step for forming an Hf ⁇ film on the substrate 400 in the reaction chamber 100, and removing impurities such as C and H which are specific elements in the Hf ⁇ film formed in the film forming step.
  • the reforming step of removing by plasma treatment using the reactant activation unit 110 is controlled so as to be continuously repeated a plurality of times. This control controls the opening and closing of the valves 33, 34, 35 provided in the gas supply control pipe 36, the valve 230 provided in the radial bypass pipe 14b, and the valve 240 provided in the radical supply pipe 130. It is done by doing.
  • the temperature control means 51 for controlling the heater 300 the liquid flow control device 280, the flow control means 52 for controlling the mass flow controllers 460a, 460b, 550, 560 and 570, and the control of the pressure regulator 61
  • a drive control unit 54 for controlling the substrate rotation unit 120 In the control device 250, the temperature control means 51 for controlling the heater 300, the liquid flow control device 280, the flow control means 52 for controlling the mass flow controllers 460a, 460b, 550, 560 and 570, and the control of the pressure regulator 61 And a drive control unit 54 for controlling the substrate rotation unit 120.
  • This procedure includes a temperature raising step, a film forming step, a purging step, and a reforming step.
  • At least one substrate 400 is carried into the reaction chamber 100 shown in FIG. 1, and the substrate 400 is placed on the susceptor 200 in the reaction chamber 100. While rotating the substrate 400 by the substrate rotation unit 120, power is supplied to the heater 300 to raise the temperature of the substrate 400 to 350-500. Heat uniformly to C (heating step).
  • the substrate temperature varies depending on the reactivity of the organic material used. For Hf- (MMP), the temperature is preferably in the range of 390-450 ° C.
  • an inert gas such as Ar, He, or N is constantly flowed into the reaction chamber 100 from the inert gas supply pipes 23 and 24, particles and metal contamination may occur. An object can be prevented from adhering to the substrate 400.
  • a film forming step is started.
  • the flow rate of the organic liquid raw material, for example, Hf- (MMP) supplied from the raw material supply unit 900 is controlled by the liquid flow controller 280.
  • the inert gas supply unit 10a connects the inert gas An inert gas (such as N) is always flowed into the reaction chamber 100 to agitate the deposition gas.
  • the film forming gas is diluted with an inert gas, stirring becomes easier.
  • the film forming gas supplied from the source gas supply pipe 5b and the inert gas supplied from the inert gas supply pipes 23 and 24 are mixed by the gas supply control pipe 36, and the mixed gas is showered from the source supply pipe 500 through the gas supply control pipe 36. It is guided to the head 600 and supplied through a large number of holes 800 onto the substrate 400 on the susceptor 200 in the form of a shower. At this time, gas containing oxygen atoms such as O is not supplied, and only Hf— (MMP) gas is supplied as the reactive gas.
  • MMP Hf—
  • an interface layer with the substrate is formed on the substrate 400.
  • a 0.5 A 30 A, for example, 15 A, HfO film is formed as the (first insulating layer).
  • the substrate 400 is kept at a predetermined temperature (film formation temperature) by the heater 300 while rotating, so that a uniform film can be formed in the surface of the substrate.
  • the supply of the source gas to the substrate 400 is stopped by closing the valve 34 or the valve 35 provided on the source gas supply pipe 5b.
  • the valve 33 provided in the source gas bypass pipe 14a is opened, and the supply of the deposition gas is exhausted by bypassing the reaction chamber 100 by the source gas bypass pipe 14a, and the deposition gas supplied from the source supply unit 900 is discharged. Do not stop the supply of water.
  • the film forming gas can be supplied to the substrate 400 immediately by simply switching the flow.
  • a purging step is started.
  • the inside of the reaction chamber 100 is purged with an inert gas to remove residual gas.
  • the inert gas N or the like
  • the valve 34 or 35 is closed to supply the source gas to the substrate 400. Is stopped and purge is performed at the same time.
  • the reforming step is started.
  • the reforming process is performed by RPO (remote plasma oxidation) treatment.
  • the RPO treatment is a remote plasma oxidation treatment that oxidizes the film using oxygen radicals as reactants generated by activating the oxygen-containing gas ( ⁇ , N ⁇ , NO, etc.) with plasma. It is.
  • the reforming process open the vanoleb 590 provided in the supply pipe 530, and supply the Ar supply unit 480 with Ar, which also supplied 480 power, to the mass flow controller 560. Then, the flow rate is controlled to supply the reactant activation unit 110 to generate Ar plasma.
  • the valve 580 provided in the supply pipe 520 is opened, and the amount supplied from the oxygen supply unit 470 is controlled by the mass flow controller 550 to the reactant activation unit 110 which is generating the Ar plasma. Supply and activate o. This produces oxygen radicals.
  • the valve 240 provided on the radical supply pipe 130 is opened, and a gas containing oxygen radicals is supplied from the reactant activation unit 110 onto the substrate 400 via the shower head 600. During this time, the substrate 400 is kept at a predetermined temperature (the same temperature as the film formation temperature) by the heater 300 while rotating, so that the C, H And other impurities can be quickly and uniformly removed.
  • the valve 240 provided on the radical supply pipe 130 is closed to stop the supply of oxygen radicals to the substrate 400.
  • the valve 230 provided in the radical bypass pipe 14b the supply of gas containing oxygen radicals is exhausted by bypassing the reaction chamber 100 by the radical bypass pipe 14b, and the supply of oxygen radicals is not stopped.
  • Oxygen radicals require a certain amount of time S from generation to stable supply, so if the oxygen radicals are not stopped and flowed so as to bypass the reaction chamber 100, the flow will be reduced in the next reforming step. By simply switching, radicals can be supplied to the substrate 400 immediately.
  • the purge step is started again.
  • the inside of the reaction chamber 100 is purged with an inert gas to remove residual gas.
  • the inert gas N or the like
  • the film forming step is started again, the valve 33 provided in the source gas bypass pipe 14a is closed, and the valves 34 and 35 provided in the source gas supply pipe 5b are opened, thereby forming the film forming gas. Is supplied onto the substrate 400 via the shower head 600, and a 15A Hf 15 film is deposited on the thin film formed in the previous film forming step.
  • the cycle process of repeating the film formation process ⁇ the purge process ⁇ the reforming process ⁇ the purge process a plurality of times enables the formation of a thin film having a predetermined film thickness with extremely little CH and ⁇ H contamination. it can.
  • the processed substrate 400 is carried out of the reaction chamber 100.
  • preferable film forming conditions when Hf— (MMP) is used are as follows.
  • temperature The range is 400-450 ° C, and the pressure range is less than about 100Pa.
  • the temperature when the temperature is lower than 400 ° C., the amount of impurities (C, H) taken into the film increases rapidly. At 400 ° C. or higher, impurities are easily released, and the amount of impurities taken into the film decreases.
  • the temperature is higher than 450 ° C, the step coverage becomes worse. When the temperature is 450 ° C or less, good step coverage can be obtained and the amorphous state can be maintained.
  • the pressure When the pressure is set to a high pressure of, for example, 1 Torr (133 Pa) or more, the gas becomes a viscous flow, so that the gas does not enter the depth of the pattern groove.
  • a high pressure for example, 1 Torr (133 Pa) or more
  • the pressure by setting the pressure to less than about lOOPa, a molecular flow without flow can be obtained, and the gas reaches the depth of the pattern groove.
  • Preferred conditions for the remote plasma oxidation treatment are a temperature range of about 390-450 ° C (approximately the same as the film formation temperature), and a pressure range of about 100-100OOOPa.
  • the O flow rate for radicals is 100 sccm, and the inert gas Ar flow rate is lslm.
  • the film forming step and the reforming step are performed at substantially the same temperature. That is, it is preferable that the set temperature of the heater be kept constant without being changed. This is because, by not causing temperature fluctuations, particles are generated due to thermal expansion of peripheral members such as the shower head and the susceptor, and it is possible to suppress the projection of metal from metal parts (metal contamination). is there.
  • the reactant activation unit 110 converts the cleaning gas (C1 or C1F) into a radical to form the reaction chamber 100
  • the valve 590 provided on the supply pipe 530 is opened, and the Ar supply unit 480 supplies the supplied Ar to the reactant activation unit 110 by controlling the flow rate by the mass flow controller 560 to generate Ar plasma.
  • the Ar supply unit 480 supplies the supplied Ar to the reactant activation unit 110 by controlling the flow rate by the mass flow controller 560 to generate Ar plasma.
  • the vanoleb 600 provided in the supply pipe 540 After generating the Ar plasma, open the vanoleb 600 provided in the supply pipe 540, and use the 490 C1F supply unit to supply the supplied C1F to the mass flow controller.
  • the flow rate is controlled by the roller 570 and supplied to the reactant activation unit 110 which generates Ar plasma to activate C1F. This produces C1F radicals. Radical supply
  • the cleaning gas reacts with the accumulated film in the reaction chamber 100, and the accumulated film is converted into a metal chloride or the like and volatilized, and the gas is exhausted. Thereby, the accumulated film in the reaction chamber is removed.
  • a film formation gas is introduced into the reaction chamber 100 to form a film.
  • the film formation gas remaining in the dead space of the source gas supply pipe 5b is sufficiently purged. What has to be done is as described above.
  • the film formation gas staying in the dead space is effectively purged by controlling the gas supply control pipe 36.
  • the configuration and operation of the gas supply control pipe 36 in the present embodiment will be described in detail.
  • the features of the gas supply control pipe 36 of the present invention are as follows. That is, first, one dilution gas supply pipe and one valve are added to the conventional gas supply control pipe 15. That is, the number of connecting points of the dilution gas pipe and the valve connected to the vaporized gas supply pipe is arranged in two or more straight lines on one supply path to the shower plate.
  • the gas supply control pipe 36 has a vaporized gas supply pipe 14, a film formation gas supply pipe 8, and a bypass pipe 16.
  • the vaporized gas supply pipe 14 and the film forming gas supply pipe 8 which are connected in an inverted L-shape correspond to the source gas supply pipe 5b shown in FIG. 1, and supply the source gas into the reaction chamber 100.
  • the bypass pipe 16 corresponds to the source gas bypass pipe 14a shown in FIG. 1 and is provided so as to branch off from a connection point between the vaporized gas supply pipe 14 and the film formation gas supply pipe 8, so that the raw material bypasses the reaction chamber 100. Construct a bypass line to exhaust gas.
  • a first valve 34 is provided downstream of the branch point of the film forming gas supply pipe 8 from the bypass pipe 16, and is provided downstream of the film forming gas supply pipe 8 downstream of the first valve 34. Is provided with a second valve 35 force S.
  • a third valve 33 is provided in the bypass pipe 16. Each of these valves 33-35 uses a two-way valve.
  • the first dilution gas supply line for supplying the first dilution gas is connected to the film formation gas supply line 8.
  • a pipe 27 and a second dilution gas supply pipe 28 for supplying a second dilution gas are provided.
  • the first dilution gas supply pipe 27 corresponds to the first inert gas supply pipe 23 shown in FIG. 1, and the first dilution gas supply pipe 27 is provided in the source gas supply line between the first valve 34 and the second valve 35.
  • a first inert gas supply line for supplying the inert gas is constituted.
  • the second dilution gas supply pipe 28 corresponds to the second inert gas supply pipe 24 shown in FIG. 1, and supplies the second inert gas into the source gas supply line downstream of the second valve 35.
  • a second inert gas supply line is provided.
  • the first dilution gas supply pipe 27 and the second dilution gas supply pipe 28 have a first dilution gas inlet 25 for introducing a dilution gas as an inert gas and a second dilution gas introduction 26, respectively. Provided.
  • the role of the first and second inert gas supply lines is as follows.
  • the first inert gas supply line 27 has a role of purging a first dead space 21 of a film formation gas supply line 8 described later (film formation stopped state). Further, it has a role of purging a second dead space 21 of a film formation gas supply line 8 described later (film formation stop transition state).
  • the flow rate of the second inert gas is adjusted so that the total flow rate of the gas introduced into the reaction chamber (total flow rate of the source gas and the dilution gas) is always constant. It has a role in suppressing pressure fluctuations.
  • the gas supply control pipe 36 is in a state where film formation is stopped ⁇ a state during film formation ⁇ a state where film formation is stopped ⁇ a state where film formation is stopped ⁇ a state during film formation ⁇ a state where film formation is stopped. ⁇ ⁇ Change.
  • the operation of the gas supply control pipe 36 for each of the above-described states will be described after the substrate 400 has been installed and heated in the reaction chamber 100 in advance.
  • the vaporizer 290 is always supplied with the film forming gas, and the first diluent gas inlet 25 and the second diluent gas inlet 2
  • the diluent gas Ar, N, ⁇ , etc., gas that does not have a film forming function alone
  • the flow rates of the film forming gas and the dilution gas may be controlled by a flow control device or the like.
  • the reason why the film formation gas is always supplied from the vaporizer 290 is as follows. If the raw material is vaporized in the vaporizer, not vaporized, or if the vaporization is stopped, the heat of vaporization May or may not be taken away, and the temperature of the vaporizer may become unstable. Then, it takes time from the start of raw material vaporization to the stable supply of raw material gas. Therefore, in order to constantly stabilize the temperature of the vaporizer and stably supply the raw material gas, the vaporizer power and the raw material gas are continuously supplied without stopping the vaporization.
  • the reason why the diluent gas is always supplied to the diluent gas supply line is as follows. When the supply of the diluent gas from the diluent gas supply line is stopped, it is conceivable that the source gas and the like will flow back to the diluent gas supply line. To prevent this, the dilution gas is always supplied to the dilution line.
  • Fig. 3 shows the state in which film formation is stopped.
  • both the valve 33 and the valve 34 are opened and the valve 35 is closed.
  • 3 indicates that the film forming gas supplied from the vaporizer 290 flows in the bold line pipes, that is, in the vaporized gas supply pipe 14 and the bypass pipe 16.
  • the first diluent gas passes through the first dead space 21, the valve 34, the valve 33, and the bypass pipe 16 in the film forming gas supply pipe 8 and is combined with the film forming gas as indicated by an arrow.
  • the first dead space 21 refers to a portion between the first valve 34 in the film forming gas supply pipe 8 and the first dilution gas supply point.
  • a second dead space 22, which will be described later refers to a portion between the second valve 35 in the film forming gas supply pipe 8 and a second dilution gas supply point.
  • the film forming gas staying in the first dead space 21 and the valve 34 can be purged by flushing with the diluent gas.
  • the backflow of the dilution gas occurs between the first dilution gas supply point in the film formation gas supply pipe 8 and the connection point between the vaporization gas supply pipe 14 and the film formation gas supply pipe 8.
  • the bypass pipe 16 is directly connected to the vacuum pump 62, simply switching the valves 33, 34, and 35 allows the first dilution gas supply point in the deposition gas supply pipe 8, the vaporized gas supply pipe 14, and the A backflow due to the dilution gas can be quickly generated between the gas supply pipe 8 and the connection point.
  • the state in which the film formation is stopped is a state before the start of film formation on the substrate 400, and is a process necessary for stabilizing the flow rate of the film formation gas.
  • the state shifts from this state to the state at the time of film formation. (State at the time of film formation)
  • Figure 4 shows the state during film formation.
  • the valve 33 is closed, and both the valve 34 and the valve 35 are open.
  • the bold gas pipes that is, the vaporized gas supply pipe 14 and the film formation gas supply pipe 8 indicate that the film formation gas is flowing. Therefore, a film forming gas is introduced into the reaction chamber 100, and a film forming process is performed on the substrate 400.
  • the first and second dilution gases are also supplied into the film forming gas supply pipe 8. After maintaining this state for a predetermined time, the state shifts to the next film formation stop transition state.
  • Fig. 5 shows the state of the film formation stop transition. In this state, both the valve 33 and the valve 35 are opened and the valve 34 is closed. Similarly to the above, it is shown that the film forming gas flows in the thick line pipe, that is, the vaporized gas supply pipe 14 and the bypass pipe 16, but in the first dead space 21 in the film formation gas supply pipe 8, This indicates that the membrane gas has accumulated. In this state, the film formation gas staying in the first dead space 21 is supplied to the reaction chamber 100 by a diffusion phenomenon, so that the film formation on the substrate 400 is not completely stopped.
  • the film forming gas existing in the second dead space 22 is swept away by the first diluent gas and the force S capable of purging, and the film forming gas existing in the first dead space 21 is swept away.
  • the film formation gas in the first dead space 21 can be pushed into the bypass pipe 16 with the first dilution gas. it can.
  • the raw material gas flow rate A supplied from the vaporizer to the vaporized gas supply pipe 14 is always constant.
  • the first dilution gas flow rate B supplied from the first dilution gas supply pipe 27 is also constant.
  • the second dilution gas flow rate C supplied from the second dilution gas supply pipe 28 is adjusted so that the total gas flow rate D introduced into the reaction chamber 100 through the film formation gas supply pipe 8 is always constant. Pressure inside reaction chamber 100 This is to prevent force fluctuation.
  • A 0.5 slm
  • B 0.5 slm
  • D l. 5 slm
  • the film forming gas staying in the dead space which has been a conventional problem, is purged by flushing with the diluent gas.
  • the film forming gas can be easily removed. Therefore, fluctuations in the deposited film thickness of the thin film can be suppressed, and uniformity of the film thickness and composition on the substrate surface can be easily obtained.
  • the first valve 34 when processing the substrate 400 in the reaction chamber 100, the first valve 34 is opened, the second valve 35 is opened, and the third valve 33 is closed.
  • the first valve 34 is closed, the second valve 35 is opened, the third knob 33 is opened, and then the first valve 34 is opened and the second valve 35 is closed.
  • the control device 250 controls the valves 33-35 so as to open the third valve 33, thereby purging the deposition gas remaining in the dead space.
  • the control device 250 controls the first valve 34, the second vane valve 35, and the third valve 33 to close the first valve 34 and open the second valve 35 after the substrate processing.
  • opening the third valve 33 and the operation of opening the first valve 34, closing the second valve 35, and opening the third valve 33 may be controlled a plurality of times. . According to this, the “film formation stop state” in FIG. 3 and the “film formation stop transition state” in FIG. 5 are repeated a plurality of times.
  • the merits of repeating the “film formation stop transition state” ⁇ “film formation stop state” are as follows.
  • the flow of the diluent gas is formed from the first diluent gas supply point to the bypass pipe 16 side, and the raw material gas remaining in the first dead space 21 is pushed into the bypass pipe 16.
  • the raw material gas that has stayed in the first dead space 21 due to diffusion may be supplied from the first dilution gas supply point to the reaction chamber side, that is, the first dilution gas supply point and the second dilution gas supply point.
  • the source gas remains in the film forming gas supply pipe 8.
  • FIG. 6 shows a gas supply control pipe 36 using such a three-way valve.
  • the film forming gas supply pipe 8 constituting the gas supply control pipe 36 and the first dilution gas supply pipe 27 are connected by a first three-way valve 40. That is, the film forming gas supply pipe 8 is connected to the first and second ports of the first three-way valve 40, and the first dilution gas supply pipe 27 is connected to the third port. Further, the film forming gas supply pipe 8 and the second dilution gas supply pipe 28 are connected by a second three-way valve 41.
  • the deposition gas supply pipe 8 is connected to the first and second ports of the second three-way valve 41, and the second dilution gas supply pipe 28 is connected to the third port.
  • a three-way valve can be used as the first valve and the second valve of the gas supply control pipe 36.
  • one source element supply unit 900 for supplying one type of organic Hf metal source is connected to the source gas supply line to form an Hf 1 film by a one-element CVD thin film.
  • a source gas supply line must have at least two sources that supply at least two types of sources.
  • the present invention can also be applied to a multi-element CVD thin film forming apparatus to which a material supply unit is connected or at least one material supply unit for supplying a mixed material in which at least two kinds of materials are mixed in a liquid state is connected.
  • the HfSi ⁇ film forming apparatus includes, for example, the following two types of apparatuses.
  • One is a type in which two types of raw materials are mixed in a liquid state in a raw material tank, and the other is a type in which a raw material tank and a vaporizer are separately provided for each raw material.
  • the type in which two types of raw materials are mixed in the raw material tank is the same as the configuration shown in FIG. 1, and the Hf raw material and the Si raw material are mixed in the raw material supply unit 900.
  • the type in which a raw material tank and a vaporizer are separately provided for each raw material is configured as shown in FIG.
  • the configuration of the substrate processing apparatus shown in FIG. 15 is basically the same as the configuration shown in FIG.
  • One of the Hf source supply systems includes a source supply unit 900a for supplying the Hf source, a liquid flow controller 28 Oa for controlling the liquid supply flow rate of the deposition source, and a vaporizer 290a for vaporizing the deposition source.
  • the other Si source supply system is composed of a source supply unit 900b for supplying an S source material, a liquid flow controller 280b for controlling the liquid supply flow rate of the film forming material, and a vaporizer 290b for vaporizing the film forming material. You.
  • the output ports of these vaporizers 290a and 290b are unified and connected to the source gas supply pipe 5b.
  • the respective gases sent from the respective film forming source supply systems are mixed in a source gas supply pipe 5b and supplied to the reaction chamber via a gas supply control pipe 36.
  • the present invention is particularly effective when forming such a multi-element thin film.
  • a plurality of types of elements have different diffusing powers depending on their masses. The lighter the element, the greater the diffusing power. That is, of the plurality of elements staying in the dead space, the one with the smaller mass is diffused first and supplied to the reaction chamber.
  • HfSiO film which is a two-element system CVD thin film
  • an Hf raw material and an S source material are used. Due to the difference, the timing of supply into the reaction chamber is shifted. Then, first The supplied material adheres more to the center of the substrate, which affects the composition uniformity within the substrate surface.
  • the present invention is particularly effective when forming a multi-element CVD thin film. It is needless to say that the present invention is also effective when a multi-element thin film is formed by ALD.
  • FIG. 1 is a schematic sectional view showing a substrate processing apparatus according to an embodiment of the present invention.
  • FIG. 2 is a diagram showing a gas supply control pipe according to the first embodiment.
  • FIG. 3 is an explanatory diagram of a gas supply control pipe according to the first embodiment.
  • FIG. 4 is an explanatory diagram of a gas supply control pipe according to the first embodiment.
  • FIG. 5 is an explanatory diagram of a gas supply control pipe according to the first embodiment.
  • FIG. 6 is a view showing a gas supply control pipe according to a second embodiment.
  • FIG. 7 is an explanatory view of a three-way valve according to a second embodiment.
  • FIG. 8 is a view showing a conventional gas supply control pipe.
  • FIG. 9 is an explanatory view showing a problem of a conventional gas supply control pipe.
  • FIG. 10 is an explanatory diagram showing a problem of a conventional gas supply control pipe.
  • FIG. 11 is an explanatory diagram showing a problem of a conventional gas supply control pipe.
  • FIG. 12 is a schematic configuration diagram of a conventional CVD apparatus.
  • FIG. 13 is a structural view of a conventional reaction chamber.
  • FIG. 14 is an explanatory diagram showing a method for controlling a flow rate of a dilution gas according to an embodiment.
  • FIG. 15 is a schematic sectional view showing another substrate processing apparatus according to the embodiment.
  • Raw material supply pipe raw gas supply line
  • Raw material supply unit Raw material supply unit

Abstract

l'invention concerne un dispositif de traitement de substrat pouvant améliorer la reproductibilité, l'uniformité au plan et l'uniformité de composition d'une couche mince formée sur un substrat. Des soupapes (34) et (35) sont disposées dans un tube (5b) d'alimentation en gaz de départ, alimentant une chambre de réaction (100) en gaz de départ, et une soupape (33) est disposée dans un tube de dérivation (14a) branché à partir du tube d'alimentation en gaz de départ (5b). Un tube d'alimentation en gaz inerte (23) est installé entre les soupapes (34) et (35). Un dispositif de commande (250) règle les soupapes comme suit : Pour la transition entre formation d'une couche et l'arrêt de formation d'une couche, la soupape (34) est fermée et les deux soupapes (33) et (35) sont ouvertes pour dériver le gaz de départ par le tube de dérivation (14a) et pour alimenter le gaz inerte par le tube d'alimentation en gaz inerte (23) afin de rejeter le gaz résiduel de la chambre de réaction dans un espace mort en aval de la soupape (35) dans le tube (5b) d'alimentation en gaz de départ. Une fois que la formation d'une couche est arrêtée, la soupape (35) est fermée et les deux soupapes (34) et (33) sont ouvertes pour alimenter le gaz inerte par le tube d'alimentation en gaz inerte (23) de façon à rejeter le gaz résiduel conjointement avec le gaz de départ dans un espace mort en amont d'une partie de gaz inerte dans le tube (5b) d'alimentation en gaz de départ par le tube de dérivation (14a).
PCT/JP2004/012855 2003-09-05 2004-09-03 Dispositif de traitement de substrat et procede pour la production de dispositifs a semi-conducteur WO2005024926A1 (fr)

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JP2008277762A (ja) * 2007-04-02 2008-11-13 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
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CN111850512A (zh) * 2019-04-26 2020-10-30 东京毅力科创株式会社 成膜方法和成膜装置
WO2021199420A1 (fr) * 2020-04-03 2021-10-07 株式会社日立ハイテク Dispositif et procédé de traitement au plasma
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JP2007113041A (ja) * 2005-10-19 2007-05-10 Hitachi Kokusai Electric Inc 基板処理装置
JP2008277762A (ja) * 2007-04-02 2008-11-13 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
US8235001B2 (en) 2007-04-02 2012-08-07 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method for manufacturing semiconductor device
US8367566B2 (en) 2007-04-02 2013-02-05 Hitachi Kokusai Electric Inc. Method for manufacturing semiconductor device and method for processing substrate
JP2012207888A (ja) * 2011-03-30 2012-10-25 Edwards Kk 除害装置
CN104934313A (zh) * 2014-03-18 2015-09-23 株式会社日立国际电气 衬底处理装置及半导体器件的制造方法
JP2015178644A (ja) * 2014-03-18 2015-10-08 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体
US9340879B2 (en) 2014-03-18 2016-05-17 Hitachi Kokusai Electric Inc. Substrate processing apparatus, method for manufacturing semiconductor device and computer-readable recording medium
JP2015178678A (ja) * 2015-04-06 2015-10-08 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体
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KR102560323B1 (ko) * 2020-04-03 2023-07-28 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
US11776792B2 (en) 2020-04-03 2023-10-03 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method
CN113767453B (zh) * 2020-04-03 2023-12-12 株式会社日立高新技术 等离子处理装置以及等离子处理方法
JPWO2021199420A1 (fr) * 2020-04-03 2021-10-07
TWI806606B (zh) * 2021-05-17 2023-06-21 日商日立全球先端科技股份有限公司 電漿處理裝置

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