JP4354539B2 - Ｍｏｓトランジスタのボディ効果の制御 - Google Patents

Ｍｏｓトランジスタのボディ効果の制御 Download PDF

Info

Publication number
JP4354539B2
JP4354539B2 JP34220596A JP34220596A JP4354539B2 JP 4354539 B2 JP4354539 B2 JP 4354539B2 JP 34220596 A JP34220596 A JP 34220596A JP 34220596 A JP34220596 A JP 34220596A JP 4354539 B2 JP4354539 B2 JP 4354539B2
Authority
JP
Japan
Prior art keywords
transistor
voltage
source
gate
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP34220596A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10233675A (ja
JPH10233675A5 (enExample
Inventor
イー．テッガツ ロス
Original Assignee
テキサス インスツルメンツ インコーポレイテツド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by テキサス インスツルメンツ インコーポレイテツド filed Critical テキサス インスツルメンツ インコーポレイテツド
Publication of JPH10233675A publication Critical patent/JPH10233675A/ja
Publication of JPH10233675A5 publication Critical patent/JPH10233675A5/ja
Application granted granted Critical
Publication of JP4354539B2 publication Critical patent/JP4354539B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Landscapes

  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP34220596A 1995-12-20 1996-12-20 Ｍｏｓトランジスタのボディ効果の制御 Expired - Lifetime JP4354539B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US893195A 1995-12-20 1995-12-20
US008931 1995-12-20

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007010207A Division JP4398983B2 (ja) 1995-12-20 2007-01-19 Ｍｏｓトランジスタのボディ効果の制御

Publications (3)

Publication Number Publication Date
JPH10233675A JPH10233675A (ja) 1998-09-02
JPH10233675A5 JPH10233675A5 (enExample) 2004-11-25
JP4354539B2 true JP4354539B2 (ja) 2009-10-28

Family

ID=21734552

Family Applications (2)

Application Number Title Priority Date Filing Date
JP34220596A Expired - Lifetime JP4354539B2 (ja) 1995-12-20 1996-12-20 Ｍｏｓトランジスタのボディ効果の制御
JP2007010207A Expired - Lifetime JP4398983B2 (ja) 1995-12-20 2007-01-19 Ｍｏｓトランジスタのボディ効果の制御

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2007010207A Expired - Lifetime JP4398983B2 (ja) 1995-12-20 2007-01-19 Ｍｏｓトランジスタのボディ効果の制御

Country Status (1)

Country Link
JP (2) JP4354539B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001156619A (ja) * 1999-11-25 2001-06-08 Texas Instr Japan Ltd 半導体回路
JP4863844B2 (ja) 2006-11-08 2012-01-25 セイコーインスツル株式会社 電圧切替回路
JP5211355B2 (ja) * 2007-11-01 2013-06-12 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 電源回路及び携帯機器
US8494173B2 (en) * 2011-10-28 2013-07-23 Gn Resound A/S Integrated circuit with configurable output cell
JP5765212B2 (ja) * 2011-12-13 2015-08-19 富士通株式会社 電力供給装置、及び、電子装置

Also Published As

Publication number Publication date
JPH10233675A (ja) 1998-09-02
JP4398983B2 (ja) 2010-01-13
JP2007116744A (ja) 2007-05-10

Similar Documents

Publication Publication Date Title
USRE42494E1 (en) Preventing drain to body forward bias in a MOS transistor
KR930003557B1 (ko) 전송게이트
US8188540B2 (en) High breakdown voltage double-gate semiconductor device
KR920006014B1 (ko) 입력버퍼 및 임계전압 증가방법
US8022477B2 (en) Semiconductor apparatus having lateral type MIS transistor
WO1995008868A1 (en) Field effect transistor with switchable body to source connection
EP0167076A2 (en) Digital circuit using mesfets
JP4398983B2 (ja) Ｍｏｓトランジスタのボディ効果の制御
JPS62120121A (ja) Ｃｍｏｓ出力ドライブ回路
JP4149129B2 (ja) 電子アナログ・スイッチ
KR101222758B1 (ko) 높은 항복 전압 이중 게이트 반도체 디바이스
US5914515A (en) Semiconductor device
JPH0231506B2 (enExample)
US6750698B1 (en) Cascade circuits utilizing normally-off junction field effect transistors for low on-resistance and low voltage applications
US6037830A (en) Tailored field in multigate FETS
CN87102623A (zh) 半导体器件
JP2715951B2 (ja) 論理回路
EP0108603B1 (en) Field effect transistor gate circuit for switching analog signals
EP0260061A2 (en) MOS-gated transistor
JPH0555491A (ja) 半導体装置
JPH07106581A (ja) 半導体装置
EP0023210B1 (en) Tri-state logic buffer circuit
JPH11150449A (ja) ヒステリシス入力回路
JPH0555486A (ja) 半導体装置
JPS6341451B2 (enExample)

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060110

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060124

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20060424

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20060427

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20060922

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070119

A911 Transfer of reconsideration by examiner before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20070130

A912 Removal of reconsideration by examiner before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20070406

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20081117

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20081126

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20081215

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20081222

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090420

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090730

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120807

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130807

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term