JP4348412B2 - 計測システムクラスター - Google Patents
計測システムクラスター Download PDFInfo
- Publication number
- JP4348412B2 JP4348412B2 JP2002585932A JP2002585932A JP4348412B2 JP 4348412 B2 JP4348412 B2 JP 4348412B2 JP 2002585932 A JP2002585932 A JP 2002585932A JP 2002585932 A JP2002585932 A JP 2002585932A JP 4348412 B2 JP4348412 B2 JP 4348412B2
- Authority
- JP
- Japan
- Prior art keywords
- measurement
- wafer
- measurement system
- information
- cluster
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005259 measurement Methods 0.000 title claims description 193
- 235000012431 wafers Nutrition 0.000 claims description 147
- 238000000034 method Methods 0.000 claims description 130
- 230000008569 process Effects 0.000 claims description 97
- 238000004519 manufacturing process Methods 0.000 claims description 40
- 238000012545 processing Methods 0.000 claims description 30
- 238000012546 transfer Methods 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 23
- 238000012015 optical character recognition Methods 0.000 claims description 13
- 230000007547 defect Effects 0.000 claims description 12
- 238000007689 inspection Methods 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- 238000004364 calculation method Methods 0.000 description 5
- 238000003754 machining Methods 0.000 description 5
- 238000004886 process control Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003466 anti-cipated effect Effects 0.000 description 2
- 238000011143 downstream manufacturing Methods 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 238000000053 physical method Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005314 correlation function Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003909 pattern recognition Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N21/211—Ellipsometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Biochemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Health & Medical Sciences (AREA)
- Automation & Control Theory (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US28648501P | 2001-04-26 | 2001-04-26 | |
| PCT/US2002/013158 WO2002088677A1 (en) | 2001-04-26 | 2002-04-24 | Measurement system cluster |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004535666A JP2004535666A (ja) | 2004-11-25 |
| JP2004535666A5 JP2004535666A5 (enExample) | 2005-12-22 |
| JP4348412B2 true JP4348412B2 (ja) | 2009-10-21 |
Family
ID=23098810
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002585932A Expired - Fee Related JP4348412B2 (ja) | 2001-04-26 | 2002-04-24 | 計測システムクラスター |
Country Status (3)
| Country | Link |
|---|---|
| US (3) | US6999164B2 (enExample) |
| JP (1) | JP4348412B2 (enExample) |
| WO (1) | WO2002088677A1 (enExample) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7541201B2 (en) | 2000-08-30 | 2009-06-02 | Kla-Tencor Technologies Corporation | Apparatus and methods for determining overlay of structures having rotational or mirror symmetry |
| US7317531B2 (en) | 2002-12-05 | 2008-01-08 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
| WO2002088677A1 (en) * | 2001-04-26 | 2002-11-07 | Therma-Wave, Inc. | Measurement system cluster |
| DE10141051A1 (de) * | 2001-08-22 | 2003-03-06 | Leica Microsystems | Anordnung und Verfahren zur Inspektion von unstruktuierten Wafern |
| US6986280B2 (en) * | 2002-01-22 | 2006-01-17 | Fei Company | Integrated measuring instrument |
| US6742168B1 (en) * | 2002-03-19 | 2004-05-25 | Advanced Micro Devices, Inc. | Method and structure for calibrating scatterometry-based metrology tool used to measure dimensions of features on a semiconductor device |
| US6886423B2 (en) * | 2002-03-27 | 2005-05-03 | Rudolph Technologies, Inc. | Scalable, automated metrology system and method of making the system |
| JP2004177377A (ja) | 2002-11-29 | 2004-06-24 | Hitachi Ltd | 検査方法および検査装置 |
| DE10308258A1 (de) * | 2003-02-25 | 2004-09-02 | Leica Microsystems Jena Gmbh | Vorrichtung und Verfahren zur Dünnschichtmetrologie |
| US7085676B2 (en) * | 2003-06-27 | 2006-08-01 | Tokyo Electron Limited | Feed forward critical dimension control |
| US20050052197A1 (en) * | 2003-07-14 | 2005-03-10 | Cory Watkins | Multi-tool manager |
| US6968252B1 (en) * | 2003-07-15 | 2005-11-22 | Advanced Micro Devices, Inc. | Method and apparatus for dispatching based on metrology tool performance |
| US7106434B1 (en) | 2003-07-28 | 2006-09-12 | Kla-Tencor Technologies, Inc. | Inspection tool |
| US20060058979A1 (en) * | 2004-09-14 | 2006-03-16 | Markle Richard J | Method and system for calibrating integrated metrology systems and stand-alone metrology systems that acquire wafer state data |
| US7076321B2 (en) * | 2004-10-05 | 2006-07-11 | Advanced Micro Devices, Inc. | Method and system for dynamically adjusting metrology sampling based upon available metrology capacity |
| US7397555B2 (en) * | 2004-12-17 | 2008-07-08 | Lam Research Corporation | System, method and apparatus for in-situ substrate inspection |
| US7315765B1 (en) * | 2005-07-29 | 2008-01-01 | Advanced Micro Devices, Inc. | Automated control thread determination based upon post-process consideration |
| JP4720991B2 (ja) * | 2005-08-01 | 2011-07-13 | 株式会社ニコン | 情報表示システム |
| US7561282B1 (en) | 2006-03-27 | 2009-07-14 | Kla-Tencor Technologies Corporation | Techniques for determining overlay and critical dimension using a single metrology tool |
| US7445446B2 (en) * | 2006-09-29 | 2008-11-04 | Tokyo Electron Limited | Method for in-line monitoring and controlling in heat-treating of resist coated wafers |
| US7625680B2 (en) * | 2006-09-29 | 2009-12-01 | Tokyo Electron Limited | Method of real time dynamic CD control |
| DE102006051495B4 (de) * | 2006-10-31 | 2017-11-02 | Globalfoundries Inc. | Verfahren und System zur zufälligen Verteilung von Scheiben in einer komplexen Prozesslinie |
| US8282984B2 (en) * | 2007-12-03 | 2012-10-09 | Tokyo Electron Limited | Processing condition inspection and optimization method of damage recovery process, damage recovering system and storage medium |
| JP5134944B2 (ja) * | 2007-12-27 | 2013-01-30 | 株式会社ニューフレアテクノロジー | 描画装置及び描画方法 |
| TWI483224B (zh) * | 2009-03-03 | 2015-05-01 | Acer Inc | 多功能模式之切換方法及其電子裝置 |
| WO2011086366A2 (en) * | 2010-01-12 | 2011-07-21 | Kromek Limited | Calibration of dataset |
| WO2011104713A1 (en) * | 2010-02-25 | 2011-09-01 | Nova Measuring Instruments Ltd. | Method and system for measurng in patterned structures |
| KR20130019495A (ko) * | 2011-08-17 | 2013-02-27 | 한국표준과학연구원 | 광소자-회전형 타원계측기 및 이를 이용한 시료의 물성 측정 방법 |
| US10330608B2 (en) * | 2012-05-11 | 2019-06-25 | Kla-Tencor Corporation | Systems and methods for wafer surface feature detection, classification and quantification with wafer geometry metrology tools |
| TW201514473A (zh) * | 2013-10-15 | 2015-04-16 | Utechzone Co Ltd | 檢測混合類型物件的方法 |
| KR102254033B1 (ko) * | 2014-06-13 | 2021-05-20 | 삼성전자주식회사 | 광학 측정 방법 및 광학 측정 시스템 |
| US10514614B2 (en) | 2015-02-13 | 2019-12-24 | Asml Netherlands B.V. | Process variability aware adaptive inspection and metrology |
| US10228678B2 (en) * | 2015-07-22 | 2019-03-12 | Tokyo Electron Limited | Tool failure analysis using space-distorted similarity |
| US10451412B2 (en) | 2016-04-22 | 2019-10-22 | Kla-Tencor Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
| KR102426823B1 (ko) | 2016-09-30 | 2022-07-28 | 가부시키가이샤 니콘 | 계측 시스템 및 기판 처리 시스템, 그리고 디바이스 제조 방법 |
| US11662324B1 (en) | 2022-03-18 | 2023-05-30 | Applied Materials Israel Ltd. | Three-dimensional surface metrology of wafers |
Family Cites Families (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR970003907B1 (ko) * | 1988-02-12 | 1997-03-22 | 도오교오 에레구토론 가부시끼 가이샤 | 기판처리 장치 및 기판처리 방법 |
| US5393624A (en) * | 1988-07-29 | 1995-02-28 | Tokyo Electron Limited | Method and apparatus for manufacturing a semiconductor device |
| US5270222A (en) * | 1990-12-31 | 1993-12-14 | Texas Instruments Incorporated | Method and apparatus for semiconductor device fabrication diagnosis and prognosis |
| JP2598353B2 (ja) * | 1991-12-04 | 1997-04-09 | アネルバ株式会社 | 基板処理装置、基板搬送装置及び基板交換方法 |
| US5766360A (en) * | 1992-03-27 | 1998-06-16 | Kabushiki Kaisha Toshiba | Substrate processing apparatus and substrate processing method |
| US5474410A (en) * | 1993-03-14 | 1995-12-12 | Tel-Varian Limited | Multi-chamber system provided with carrier units |
| KR100267617B1 (ko) * | 1993-04-23 | 2000-10-16 | 히가시 데쓰로 | 진공처리장치 및 진공처리방법 |
| KR100390293B1 (ko) * | 1993-09-21 | 2003-09-02 | 가부시끼가이샤 도시바 | 폴리싱장치 |
| US5461559A (en) * | 1993-10-04 | 1995-10-24 | The United States Of America As Represented By The Secretary Of The Air Force | Hierarchical control system for molecular beam epitaxy |
| US5492594A (en) * | 1994-09-26 | 1996-02-20 | International Business Machines Corp. | Chemical-mechanical polishing tool with end point measurement station |
| US5646870A (en) * | 1995-02-13 | 1997-07-08 | Advanced Micro Devices, Inc. | Method for setting and adjusting process parameters to maintain acceptable critical dimensions across each die of mass-produced semiconductor wafers |
| TW315504B (enExample) * | 1995-03-20 | 1997-09-11 | Tokyo Electron Co Ltd | |
| IL113829A (en) * | 1995-05-23 | 2000-12-06 | Nova Measuring Instr Ltd | Apparatus for optical inspection of wafers during polishing |
| US5719796A (en) * | 1995-12-04 | 1998-02-17 | Advanced Micro Devices, Inc. | System for monitoring and analyzing manufacturing processes using statistical simulation with single step feedback |
| US5695601A (en) * | 1995-12-27 | 1997-12-09 | Kabushiki Kaisha Toshiba | Method for planarizing a semiconductor body by CMP method and an apparatus for manufacturing a semiconductor device using the method |
| US6021380A (en) * | 1996-07-09 | 2000-02-01 | Scanis, Inc. | Automatic semiconductor wafer sorter/prober with extended optical inspection |
| US5948203A (en) * | 1996-07-29 | 1999-09-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Optical dielectric thickness monitor for chemical-mechanical polishing process monitoring |
| US6028664A (en) * | 1997-01-29 | 2000-02-22 | Inspex, Inc. | Method and system for establishing a common reference point on a semiconductor wafer inspected by two or more scanning mechanisms |
| JP4527205B2 (ja) * | 1997-03-31 | 2010-08-18 | リアル・タイム・メトロジー,インコーポレーテッド | 光学検査モジュール、及び統合プロセス工具内で基板上の粒子及び欠陥を検出するための方法 |
| US5996415A (en) * | 1997-04-30 | 1999-12-07 | Sensys Instruments Corporation | Apparatus and method for characterizing semiconductor wafers during processing |
| JP3936030B2 (ja) * | 1997-06-23 | 2007-06-27 | 東京エレクトロン株式会社 | 被処理体の回収方法 |
| US6019000A (en) * | 1997-11-20 | 2000-02-01 | Sensys Instruments Corporation | In-situ measurement of deposition on reactor chamber members |
| JPH11220004A (ja) * | 1997-11-26 | 1999-08-10 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
| US6157450A (en) * | 1998-03-09 | 2000-12-05 | Chapman Instruments | Automated optical surface profile measurement system |
| IL125337A0 (en) * | 1998-07-14 | 1999-03-12 | Nova Measuring Instr Ltd | Method and apparatus for lithography monitoring and process control |
| US6177287B1 (en) * | 1998-09-28 | 2001-01-23 | Advanced Micro Devices, Inc. | Simplified inter database communication system |
| AU5703100A (en) * | 1999-07-13 | 2001-01-30 | Mv Research Limited | A circuit production method |
| US7069101B1 (en) * | 1999-07-29 | 2006-06-27 | Applied Materials, Inc. | Computer integrated manufacturing techniques |
| IL132639A (en) * | 1999-10-28 | 2003-11-23 | Nova Measuring Instr Ltd | Optical measurements of patterned structures |
| US6640151B1 (en) * | 1999-12-22 | 2003-10-28 | Applied Materials, Inc. | Multi-tool control system, method and medium |
| US6684122B1 (en) * | 2000-01-03 | 2004-01-27 | Advanced Micro Devices, Inc. | Control mechanism for matching process parameters in a multi-chamber process tool |
| US6362116B1 (en) * | 2000-02-09 | 2002-03-26 | Advanced Micro Devices, Inc. | Method for controlling photoresist baking processes |
| AU2001249724A1 (en) * | 2000-04-03 | 2001-10-15 | Speed-Fam-Ipec Corporation | System and method for predicting software models using material-centric process instrumentation |
| US7139083B2 (en) * | 2000-09-20 | 2006-11-21 | Kla-Tencor Technologies Corp. | Methods and systems for determining a composition and a thickness of a specimen |
| US6673637B2 (en) * | 2000-09-20 | 2004-01-06 | Kla-Tencor Technologies | Methods and systems for determining a presence of macro defects and overlay of a specimen |
| US6701259B2 (en) * | 2000-10-02 | 2004-03-02 | Applied Materials, Inc. | Defect source identifier |
| IL140179A (en) * | 2000-12-07 | 2004-09-27 | Nova Measuring Instr Ltd | Method and system for measuring in patterned structures |
| WO2002088677A1 (en) * | 2001-04-26 | 2002-11-07 | Therma-Wave, Inc. | Measurement system cluster |
| US7089075B2 (en) * | 2001-05-04 | 2006-08-08 | Tokyo Electron Limited | Systems and methods for metrology recipe and model generation |
-
2002
- 2002-04-24 WO PCT/US2002/013158 patent/WO2002088677A1/en not_active Ceased
- 2002-04-24 US US10/132,538 patent/US6999164B2/en not_active Expired - Fee Related
- 2002-04-24 JP JP2002585932A patent/JP4348412B2/ja not_active Expired - Fee Related
-
2004
- 2004-12-15 US US11/012,940 patent/US7106433B2/en not_active Expired - Fee Related
-
2006
- 2006-07-28 US US11/494,924 patent/US7283226B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20050094138A1 (en) | 2005-05-05 |
| WO2002088677A1 (en) | 2002-11-07 |
| US20060274306A1 (en) | 2006-12-07 |
| US7283226B2 (en) | 2007-10-16 |
| JP2004535666A (ja) | 2004-11-25 |
| US20020176074A1 (en) | 2002-11-28 |
| US6999164B2 (en) | 2006-02-14 |
| US7106433B2 (en) | 2006-09-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4348412B2 (ja) | 計測システムクラスター | |
| US7089075B2 (en) | Systems and methods for metrology recipe and model generation | |
| US6774998B1 (en) | Method and apparatus for identifying misregistration in a complimentary phase shift mask process | |
| US9715181B2 (en) | Method of calibrating a lithographic apparatus, device manufacturing method and associated data processing apparatus and computer program product | |
| US10816907B2 (en) | Method for determining an optimized set of measurement locations for measurement of a parameter of a lithographic process, metrology system and computer program products for implementing such methods | |
| JP5266352B2 (ja) | リソグラフィ装置及びデバイス製造方法 | |
| JP6025489B2 (ja) | 検査装置および検査装置システム | |
| WO2013173468A2 (en) | Method and device for using substrate geometry to determine substrate analysis sampling | |
| KR20130034631A (ko) | 기판에 패턴을 적용하는 방법, 디바이스 제조 방법, 및 이러한 방법들에 이용하기 위한 리소그래피 장치 | |
| CN108713166A (zh) | 计算用于控制制造工艺的校正的方法、计量设备、器件制造方法和建模方法 | |
| US10365225B1 (en) | Multi-location metrology | |
| NL2013923A (en) | Apparatus operable to perform a measurement operation on a substrate, lithographic apparatus, and method of performing a measurement operation on a substrate. | |
| KR102217214B1 (ko) | 성능 파라미터의 핑거프린트를 결정하는 장치 및 방법 | |
| US7243331B2 (en) | Method and system for controlling the quality of a reticle | |
| JP5128065B2 (ja) | 情報処理装置、デバイス製造処理システム、デバイス製造処理方法、プログラム | |
| US8090875B2 (en) | Device and method for connecting device manufacturing processing apparatuses, program, device manufacturing processing system, exposure apparatus and method, and measurement and inspection apparatus and method | |
| US10831111B2 (en) | Metrology method and lithographic method, lithographic cell and computer program | |
| CN111480119B (zh) | 用于控制制造设备的方法以及相关联的设备 | |
| TW202318098A (zh) | 監測微影程序之方法及其相關設備 | |
| TW202347042A (zh) | 度量衡方法及其相關聯裝置 | |
| KR102209725B1 (ko) | 메트롤로지 시스템의 성능을 예측하는 장치 및 방법 | |
| JP2025049967A (ja) | 決定方法、情報処理装置及びプログラム | |
| Cain et al. | Automated creation of production metrology recipes based on design information | |
| KR20240112897A (ko) | 계측 교정 방법 | |
| EP3683626A1 (en) | Methods for sample scheme generation and optimization |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050412 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050412 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20081209 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090304 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20090331 |
|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20090501 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20090501 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20090501 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090626 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20090626 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120731 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150731 Year of fee payment: 6 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |