JP4329312B2 - 薄膜半導体装置、その製造方法及び画像表示装置 - Google Patents

薄膜半導体装置、その製造方法及び画像表示装置 Download PDF

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JP4329312B2
JP4329312B2 JP2002192852A JP2002192852A JP4329312B2 JP 4329312 B2 JP4329312 B2 JP 4329312B2 JP 2002192852 A JP2002192852 A JP 2002192852A JP 2002192852 A JP2002192852 A JP 2002192852A JP 4329312 B2 JP4329312 B2 JP 4329312B2
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thin film
single crystal
film
forming
manufacturing
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JP2004039765A (ja
JP2004039765A5 (https=
Inventor
成基 朴
伸也 山口
睦子 波多野
健夫 芝
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Hitachi Ltd
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Hitachi Ltd
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Priority to JP2002192852A priority Critical patent/JP4329312B2/ja
Priority to TW092103932A priority patent/TWI266371B/zh
Priority to US10/372,809 priority patent/US6847069B2/en
Priority to KR1020030012276A priority patent/KR100998148B1/ko
Priority to CNB031199097A priority patent/CN100456497C/zh
Publication of JP2004039765A publication Critical patent/JP2004039765A/ja
Priority to US11/004,858 priority patent/US7084020B2/en
Publication of JP2004039765A5 publication Critical patent/JP2004039765A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6744—Monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0227—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using structural arrangements to control crystal growth, e.g. placement of grain filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3456—Polycrystalline
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3466—Crystal orientation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/382—Scanning of a beam

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  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP2002192852A 2002-07-02 2002-07-02 薄膜半導体装置、その製造方法及び画像表示装置 Expired - Fee Related JP4329312B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002192852A JP4329312B2 (ja) 2002-07-02 2002-07-02 薄膜半導体装置、その製造方法及び画像表示装置
TW092103932A TWI266371B (en) 2002-07-02 2003-02-25 Thin-film semiconductor device, manufacturing method of the same and image display apparatus
US10/372,809 US6847069B2 (en) 2002-07-02 2003-02-26 Thin-film semiconductor device, manufacturing method of the same and image display apparatus
KR1020030012276A KR100998148B1 (ko) 2002-07-02 2003-02-27 박막 반도체 장치 및 그 제조 방법과 화상 표시 장치
CNB031199097A CN100456497C (zh) 2002-07-02 2003-02-28 薄膜半导体器件
US11/004,858 US7084020B2 (en) 2002-07-02 2004-12-07 Manufacturing method of a thin-film semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002192852A JP4329312B2 (ja) 2002-07-02 2002-07-02 薄膜半導体装置、その製造方法及び画像表示装置

Publications (3)

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JP2004039765A JP2004039765A (ja) 2004-02-05
JP2004039765A5 JP2004039765A5 (https=) 2005-10-20
JP4329312B2 true JP4329312B2 (ja) 2009-09-09

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JP2002192852A Expired - Fee Related JP4329312B2 (ja) 2002-07-02 2002-07-02 薄膜半導体装置、その製造方法及び画像表示装置

Country Status (5)

Country Link
US (2) US6847069B2 (https=)
JP (1) JP4329312B2 (https=)
KR (1) KR100998148B1 (https=)
CN (1) CN100456497C (https=)
TW (1) TWI266371B (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7732334B2 (en) * 2004-08-23 2010-06-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101219749B1 (ko) * 2004-10-22 2013-01-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
JP2006128233A (ja) 2004-10-27 2006-05-18 Hitachi Ltd 半導体材料および電界効果トランジスタとそれらの製造方法
KR100570219B1 (ko) * 2004-12-23 2006-04-12 주식회사 하이닉스반도체 반도체 소자의 체인 게이트 라인 및 그 제조 방법
JP2006261188A (ja) * 2005-03-15 2006-09-28 Seiko Epson Corp 半導体装置の製造方法及び半導体装置
KR101127132B1 (ko) * 2005-05-13 2012-03-21 삼성전자주식회사 실리콘 나노와이어 기판 및 그 제조방법, 그리고 이를이용한 박막 트랜지스터의 제조방법
US8022408B2 (en) 2005-05-13 2011-09-20 Samsung Electronics Co., Ltd. Crystalline nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the same
JP4850452B2 (ja) * 2005-08-08 2012-01-11 株式会社 日立ディスプレイズ 画像表示装置
CN100536117C (zh) * 2006-12-07 2009-09-02 广富群光电股份有限公司 薄膜晶体管面板的制造方法
US20090250700A1 (en) * 2008-04-08 2009-10-08 Themistokles Afentakis Crystalline Semiconductor Stripe Transistor
US20090250791A1 (en) * 2008-04-08 2009-10-08 Themistokles Afentakis Crystalline Semiconductor Stripes
JP5669439B2 (ja) * 2010-05-21 2015-02-12 株式会社半導体エネルギー研究所 半導体基板の作製方法
CN102280474B (zh) * 2010-06-09 2014-02-19 尹海洲 一种igbt器件及其制造方法
GB201310854D0 (en) 2013-06-18 2013-07-31 Isis Innovation Photoactive layer production process
JP6857517B2 (ja) * 2016-06-16 2021-04-14 ディフテック レーザーズ インコーポレイテッド 基板上に結晶アイランドを製造する方法

Family Cites Families (13)

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JP3213338B2 (ja) * 1991-05-15 2001-10-02 株式会社リコー 薄膜半導体装置の製法
TW226478B (en) * 1992-12-04 1994-07-11 Semiconductor Energy Res Co Ltd Semiconductor device and method for manufacturing the same
JP3450376B2 (ja) * 1993-06-12 2003-09-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH08316485A (ja) * 1995-05-12 1996-11-29 Fuji Xerox Co Ltd 半導体結晶の形成方法及びこれを用いた半導体装置の製造方法
JP3550805B2 (ja) * 1995-06-09 2004-08-04 ソニー株式会社 薄膜半導体装置の製造方法
JPH10289876A (ja) * 1997-04-16 1998-10-27 Hitachi Ltd レーザ結晶化方法及びそれを用いた半導体装置並びに応用機器
JPH11121753A (ja) 1997-10-14 1999-04-30 Hitachi Ltd 半導体装置及びその製造方法
JP2000243970A (ja) 1999-02-24 2000-09-08 Matsushita Electric Ind Co Ltd 薄膜トランジスタとその製造方法及びそれを用いた液晶表示装置とその製造方法
US6271101B1 (en) * 1998-07-29 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Process for production of SOI substrate and process for production of semiconductor device
TW517260B (en) * 1999-05-15 2003-01-11 Semiconductor Energy Lab Semiconductor device and method for its fabrication
JP2001345451A (ja) * 2000-05-30 2001-12-14 Hitachi Ltd 薄膜半導体集積回路装置、それを用いた画像表示装置、及びその製造方法
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US6692999B2 (en) * 2001-06-26 2004-02-17 Fujitsu Limited Polysilicon film forming method

Also Published As

Publication number Publication date
KR20040004039A (ko) 2004-01-13
JP2004039765A (ja) 2004-02-05
US20050095822A1 (en) 2005-05-05
CN100456497C (zh) 2009-01-28
US6847069B2 (en) 2005-01-25
TWI266371B (en) 2006-11-11
CN1467859A (zh) 2004-01-14
TW200401366A (en) 2004-01-16
KR100998148B1 (ko) 2010-12-02
US20040005747A1 (en) 2004-01-08
US7084020B2 (en) 2006-08-01

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