JP4322846B2 - サセプタ - Google Patents

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Publication number
JP4322846B2
JP4322846B2 JP2005190841A JP2005190841A JP4322846B2 JP 4322846 B2 JP4322846 B2 JP 4322846B2 JP 2005190841 A JP2005190841 A JP 2005190841A JP 2005190841 A JP2005190841 A JP 2005190841A JP 4322846 B2 JP4322846 B2 JP 4322846B2
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JP
Japan
Prior art keywords
susceptor
wafer
mounting member
sic
wafer mounting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2005190841A
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English (en)
Japanese (ja)
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JP2006060195A5 (enExample
JP2006060195A (ja
Inventor
一郎 藤田
広和 藤原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Tanso Co Ltd
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Toyo Tanso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Priority to JP2005190841A priority Critical patent/JP4322846B2/ja
Publication of JP2006060195A publication Critical patent/JP2006060195A/ja
Publication of JP2006060195A5 publication Critical patent/JP2006060195A5/ja
Application granted granted Critical
Publication of JP4322846B2 publication Critical patent/JP4322846B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP2005190841A 2004-07-22 2005-06-30 サセプタ Expired - Lifetime JP4322846B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005190841A JP4322846B2 (ja) 2004-07-22 2005-06-30 サセプタ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004213845 2004-07-22
JP2005190841A JP4322846B2 (ja) 2004-07-22 2005-06-30 サセプタ

Publications (3)

Publication Number Publication Date
JP2006060195A JP2006060195A (ja) 2006-03-02
JP2006060195A5 JP2006060195A5 (enExample) 2007-12-20
JP4322846B2 true JP4322846B2 (ja) 2009-09-02

Family

ID=36107376

Family Applications (1)

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JP2005190841A Expired - Lifetime JP4322846B2 (ja) 2004-07-22 2005-06-30 サセプタ

Country Status (1)

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JP (1) JP4322846B2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4252944B2 (ja) * 2004-07-29 2009-04-08 新電元工業株式会社 サセプタおよび化学気相成長方法
JP4998307B2 (ja) * 2008-02-13 2012-08-15 住友電気工業株式会社 ＳｉＣ基板の気相成長方法
JP2010272550A (ja) * 2009-05-19 2010-12-02 Sumitomo Electric Ind Ltd サセプタ
JP5336307B2 (ja) * 2009-09-04 2013-11-06 株式会社ブリヂストン 炭化珪素単結晶の製造方法
JP5880297B2 (ja) * 2012-06-07 2016-03-08 三菱電機株式会社 基板支持体、半導体製造装置
US9764992B2 (en) 2013-02-06 2017-09-19 Toyo Tanso Co., Ltd. Silicon carbide-tantalum carbide composite and susceptor
JP2015146416A (ja) * 2014-01-06 2015-08-13 住友電気工業株式会社 炭化珪素基板用支持部材、炭化珪素成長装置用部材、および炭化珪素エピタキシャル基板の製造方法
JP2015143168A (ja) * 2014-01-31 2015-08-06 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素エピタキシャル基板の製造方法
JP6219238B2 (ja) 2014-06-24 2017-10-25 東洋炭素株式会社 サセプタ及びその製造方法
JP6444641B2 (ja) 2014-07-24 2018-12-26 株式会社ニューフレアテクノロジー 成膜装置、サセプタ、及び成膜方法
JP6532424B2 (ja) * 2016-03-30 2019-06-19 三菱電機株式会社 基板設置部材、ウェハプレート、およびＳｉＣエピタキシャル基板の製造方法
US20210040643A1 (en) * 2017-05-12 2021-02-11 Toyo Tanso Co., Ltd. Susceptor, method for producing epitaxial substrate, and epitaxial substrate
WO2020255698A1 (ja) * 2019-06-19 2020-12-24 住友電気工業株式会社 炭化珪素エピタキシャル基板
WO2022013906A1 (ja) * 2020-07-13 2022-01-20 三菱電機株式会社 ＳｉＣエピタキシャル基板の製造装置及び製造方法
JP7780638B2 (ja) * 2022-05-30 2025-12-04 株式会社ニューフレアテクノロジー ホルダ及び気相成長装置

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Publication number Publication date
JP2006060195A (ja) 2006-03-02

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