JP4292600B2 - ＧａＮ系半導体発光素子およびその製造方法 - Google Patents

ＧａＮ系半導体発光素子およびその製造方法 Download PDF

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Publication number
JP4292600B2
JP4292600B2 JP25801498A JP25801498A JP4292600B2 JP 4292600 B2 JP4292600 B2 JP 4292600B2 JP 25801498 A JP25801498 A JP 25801498A JP 25801498 A JP25801498 A JP 25801498A JP 4292600 B2 JP4292600 B2 JP 4292600B2
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light emitting
layer
doped
gan
rare earth
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Expired - Fee Related
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JP25801498A
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Japanese (ja)
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JP2000091703A5 (enExample
JP2000091703A (ja
Inventor
克洋 秋本
隆浩 丸山
進一 森島
孝夫 宮嶋
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Sony Corp
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Sony Corp
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Priority to JP25801498A priority Critical patent/JP4292600B2/ja
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Publication of JP2000091703A5 publication Critical patent/JP2000091703A5/ja
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JP25801498A 1998-09-11 1998-09-11 ＧａＮ系半導体発光素子およびその製造方法 Expired - Fee Related JP4292600B2 (ja)

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JP25801498A JP4292600B2 (ja) 1998-09-11 1998-09-11 ＧａＮ系半導体発光素子およびその製造方法

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JP25801498A JP4292600B2 (ja) 1998-09-11 1998-09-11 ＧａＮ系半導体発光素子およびその製造方法

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JP2000091703A JP2000091703A (ja) 2000-03-31
JP2000091703A5 JP2000091703A5 (enExample) 2005-10-20
JP4292600B2 true JP4292600B2 (ja) 2009-07-08

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JP25801498A Expired - Fee Related JP4292600B2 (ja) 1998-09-11 1998-09-11 ＧａＮ系半導体発光素子およびその製造方法

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Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001339102A (ja) * 2000-05-29 2001-12-07 Toyota Central Res & Dev Lab Inc 窒化物系化合物半導体発光素子
DE10055710A1 (de) * 2000-11-10 2002-05-23 Horst P Strunk Herstellungsverfahren für ein optoelektronisches Halbleiterbauelement auf der Basis von seltenerddotiertem, amorphem III-N-Halbleitermaterial
JP4063520B2 (ja) 2000-11-30 2008-03-19 日本碍子株式会社 半導体発光素子
JP3872327B2 (ja) 2000-12-04 2007-01-24 日本碍子株式会社 半導体発光素子
JP3888668B2 (ja) 2000-12-28 2007-03-07 日本碍子株式会社 半導体発光素子
JP2002208730A (ja) * 2001-01-09 2002-07-26 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
KR20010044594A (ko) * 2001-03-09 2001-06-05 김상식 광통신용 희토류 반도체 소자
JP2002289927A (ja) * 2001-03-27 2002-10-04 Ngk Insulators Ltd 発光素子
JP3791765B2 (ja) * 2001-06-08 2006-06-28 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
JP2005268770A (ja) 2004-02-19 2005-09-29 Matsushita Electric Ind Co Ltd 白色発光素子及び白色光源
JP2005268775A (ja) * 2004-02-19 2005-09-29 Matsushita Electric Ind Co Ltd 半導体発光素子及びその製造方法
US7569863B2 (en) * 2004-02-19 2009-08-04 Panasonic Corporation Semiconductor light emitting device
GB2431930B8 (en) * 2004-08-31 2010-03-10 Sumitomo Chemical Co Fluorescent nitrides comprising AI, Ga or In
FR2904730A1 (fr) * 2006-10-04 2008-02-08 Commissariat Energie Atomique Procede pour la realisation de diodes electroluminescentes a partir de semi-conducteurs nitrures.
WO2008144337A1 (en) * 2007-05-16 2008-11-27 Osram Sylvania Inc. Light emitting diode based on multiple double-heterostructures (quantum wells) with rare earth doped active regions
KR101383489B1 (ko) * 2009-05-07 2014-04-08 오사카 유니버시티 적색 발광 반도체 소자 및 적색 발광 반도체 소자의 제조방법
JP5943407B2 (ja) * 2011-03-07 2016-07-05 国立大学法人豊橋技術科学大学 窒化物半導体発光素子及びその製造方法
WO2014030516A1 (ja) * 2012-08-23 2014-02-27 国立大学法人大阪大学 窒化物半導体素子用基板とその製造方法、および赤色発光半導体素子とその製造方法
FR3119709B1 (fr) * 2021-02-09 2023-10-20 Commissariat Energie Atomique Diode electroluminescente comprenant des regions emissives incluant des ions de terres rares
JP7754519B2 (ja) * 2021-02-25 2025-10-15 康文 藤原 希土類添加窒化物半導体素子とその製造方法、半導体ｌｅｄ、半導体レーザー
CN116705947B (zh) * 2023-07-27 2023-10-17 江西兆驰半导体有限公司 基于硅衬底的led外延片及其制备方法、led

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