JP4289755B2 - 露光量制御方法、デバイス製造方法および露光装置 - Google Patents

露光量制御方法、デバイス製造方法および露光装置 Download PDF

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Publication number
JP4289755B2
JP4289755B2 JP2000047359A JP2000047359A JP4289755B2 JP 4289755 B2 JP4289755 B2 JP 4289755B2 JP 2000047359 A JP2000047359 A JP 2000047359A JP 2000047359 A JP2000047359 A JP 2000047359A JP 4289755 B2 JP4289755 B2 JP 4289755B2
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Japan
Prior art keywords
illuminance
substrate
exposure
light
exposure amount
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JP2000047359A
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Japanese (ja)
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JP2001237169A (ja
JP2001237169A5 (enExample
Inventor
堅一郎 森
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Canon Inc
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Canon Inc
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Priority to JP2000047359A priority Critical patent/JP4289755B2/ja
Priority to US09/790,866 priority patent/US6803991B2/en
Publication of JP2001237169A publication Critical patent/JP2001237169A/ja
Publication of JP2001237169A5 publication Critical patent/JP2001237169A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2000047359A 2000-02-24 2000-02-24 露光量制御方法、デバイス製造方法および露光装置 Expired - Fee Related JP4289755B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000047359A JP4289755B2 (ja) 2000-02-24 2000-02-24 露光量制御方法、デバイス製造方法および露光装置
US09/790,866 US6803991B2 (en) 2000-02-24 2001-02-23 Exposure amount control method in exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000047359A JP4289755B2 (ja) 2000-02-24 2000-02-24 露光量制御方法、デバイス製造方法および露光装置

Publications (3)

Publication Number Publication Date
JP2001237169A JP2001237169A (ja) 2001-08-31
JP2001237169A5 JP2001237169A5 (enExample) 2007-04-12
JP4289755B2 true JP4289755B2 (ja) 2009-07-01

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JP2000047359A Expired - Fee Related JP4289755B2 (ja) 2000-02-24 2000-02-24 露光量制御方法、デバイス製造方法および露光装置

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US (1) US6803991B2 (enExample)
JP (1) JP4289755B2 (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000277413A (ja) * 1999-03-24 2000-10-06 Canon Inc 露光量制御方法、露光装置およびデバイス製造方法
TW552805B (en) * 2001-05-17 2003-09-11 Koninkl Philips Electronics Nv Output stabilization for a laser matrix
JP3673731B2 (ja) * 2001-05-22 2005-07-20 キヤノン株式会社 露光装置及び方法
US7095497B2 (en) * 2001-06-27 2006-08-22 Canon Kabushiki Kaisha Beam splitting apparatus, transmittance measurement apparatus, and exposure apparatus
EP1316847A1 (en) * 2001-11-30 2003-06-04 Degraf s.r.l. "Machine for the uv exposure of flexographic plates"
JP2003295459A (ja) * 2002-04-02 2003-10-15 Nikon Corp 露光装置及び露光方法
US20040021831A1 (en) * 2002-07-31 2004-02-05 Canon Kabushiki Kaisha, Tokyo, Japan Projection type image display apparatus and image display system
JP2005109304A (ja) 2003-10-01 2005-04-21 Canon Inc 照明光学系及び露光装置
US20050117861A1 (en) * 2003-12-02 2005-06-02 Jung-Yen Hsu Structure of a diffusing film and prism film in LCD screen
US7061586B2 (en) * 2004-03-02 2006-06-13 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP2006043029A (ja) * 2004-08-03 2006-02-16 Matsushita Electric Ind Co Ltd 生体判別装置およびそれを用いた認証装置ならびに生体判別方法
US7583362B2 (en) * 2004-11-23 2009-09-01 Infineon Technologies Ag Stray light feedback for dose control in semiconductor lithography systems
JP4765313B2 (ja) * 2004-12-27 2011-09-07 株式会社ニコン 露光装置
US7428039B2 (en) * 2005-11-17 2008-09-23 Coherent, Inc. Method and apparatus for providing uniform illumination of a mask in laser projection systems
WO2007094470A1 (ja) * 2006-02-16 2007-08-23 Nikon Corporation 露光装置、露光方法及びデバイス製造方法
JP2008016516A (ja) 2006-07-03 2008-01-24 Canon Inc 露光装置
JP2008047673A (ja) * 2006-08-14 2008-02-28 Canon Inc 露光装置及びデバイス製造方法
JP4816367B2 (ja) 2006-09-27 2011-11-16 ウシオ電機株式会社 光照射器およびインクジェットプリンタ
DE102007025340B4 (de) * 2007-05-31 2019-12-05 Globalfoundries Inc. Immersionslithograpieprozess unter Anwendung einer variablen Abtastgeschwindigkeit und Lithographiesystem
JP2009034831A (ja) * 2007-07-31 2009-02-19 Ushio Inc 光照射器及びこの光照射器を使用したプリンタ
JP2009206373A (ja) * 2008-02-28 2009-09-10 Canon Inc 露光装置及びデバイス製造方法
JP2009302399A (ja) * 2008-06-16 2009-12-24 Canon Inc 露光装置およびデバイス製造方法
NL2003204A1 (nl) * 2008-08-14 2010-02-16 Asml Netherlands Bv Lithographic apparatus and method.
DE102008042463B3 (de) * 2008-09-30 2010-04-22 Carl Zeiss Smt Ag Optische Messvorrichtung für eine Projektionsbelichtungsanlage
JP5134732B2 (ja) * 2008-10-31 2013-01-30 カール・ツァイス・エスエムティー・ゲーエムベーハー Ｅｕｖマイクロリソグラフィ用の照明光学系
JP2010114266A (ja) * 2008-11-06 2010-05-20 Canon Inc 露光装置およびその制御方法、ならびにデバイス製造方法
JPWO2012137842A1 (ja) * 2011-04-04 2014-07-28 株式会社ニコン 照明装置、露光装置、デバイス製造方法、導光光学素子及び導光光学素子の製造方法
JP6116457B2 (ja) * 2013-09-26 2017-04-19 株式会社Ｓｃｒｅｅｎホールディングス 描画装置
CN107966882B (zh) * 2017-08-10 2020-10-16 上海微电子装备（集团）股份有限公司 曝光设备和曝光方法
CN115128907A (zh) * 2021-03-25 2022-09-30 上海微电子装备（集团）股份有限公司 曝光剂量控制系统及曝光系统
CN115236940A (zh) * 2021-04-22 2022-10-25 上海微电子装备（集团）股份有限公司 曝光系统以及光刻设备
KR20250045750A (ko) * 2023-09-26 2025-04-02 삼성전자주식회사 레티클 마스킹 장치, 이를 포함하는 기판 처리 장치 및 이를 이용한 기판 처리 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5475491A (en) * 1989-02-10 1995-12-12 Canon Kabushiki Kaisha Exposure apparatus
US5815248A (en) 1993-04-22 1998-09-29 Nikon Corporation Illumination optical apparatus and method having a wavefront splitter and an optical integrator
JP3376690B2 (ja) * 1994-04-28 2003-02-10 株式会社ニコン 露光装置、及び該装置を用いた露光方法
JP3391940B2 (ja) * 1995-06-26 2003-03-31 キヤノン株式会社 照明装置及び露光装置
KR100210569B1 (ko) * 1995-09-29 1999-07-15 미따라이 하지메 노광방법 및 노광장치, 그리고 이를 이용한 디바이스제조방법
JPH1092722A (ja) * 1996-09-18 1998-04-10 Nikon Corp 露光装置
AU6853598A (en) * 1997-04-18 1998-11-13 Nikon Corporation Aligner, exposure method using the aligner, and method of manufacture of circuitdevice
DE19724903A1 (de) 1997-06-12 1998-12-17 Zeiss Carl Fa Lichtintensitätsmeßanordnung
DE69933903T2 (de) * 1998-04-14 2007-05-24 Asml Netherlands B.V. Lithograpischer Projektionsapparat und Verfahren zur Herstellung einer Vorrichtung
EP0950924B1 (en) 1998-04-14 2006-11-08 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
JP2001267239A (ja) * 2000-01-14 2001-09-28 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
TW546699B (en) * 2000-02-25 2003-08-11 Nikon Corp Exposure apparatus and exposure method capable of controlling illumination distribution

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Publication number Publication date
US20010028448A1 (en) 2001-10-11
JP2001237169A (ja) 2001-08-31
US6803991B2 (en) 2004-10-12

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