JP4286097B2 - 半導体レーザ素子および半導体レーザ装置 - Google Patents
半導体レーザ素子および半導体レーザ装置 Download PDFInfo
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- JP4286097B2 JP4286097B2 JP2003336765A JP2003336765A JP4286097B2 JP 4286097 B2 JP4286097 B2 JP 4286097B2 JP 2003336765 A JP2003336765 A JP 2003336765A JP 2003336765 A JP2003336765 A JP 2003336765A JP 4286097 B2 JP4286097 B2 JP 4286097B2
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003336765A JP4286097B2 (ja) | 2003-09-29 | 2003-09-29 | 半導体レーザ素子および半導体レーザ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003336765A JP4286097B2 (ja) | 2003-09-29 | 2003-09-29 | 半導体レーザ素子および半導体レーザ装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008285969A Division JP4883536B2 (ja) | 2008-11-06 | 2008-11-06 | 半導体レーザ素子および半導体レーザ装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005108917A JP2005108917A (ja) | 2005-04-21 |
| JP2005108917A5 JP2005108917A5 (enExample) | 2005-10-27 |
| JP4286097B2 true JP4286097B2 (ja) | 2009-06-24 |
Family
ID=34532769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003336765A Expired - Fee Related JP4286097B2 (ja) | 2003-09-29 | 2003-09-29 | 半導体レーザ素子および半導体レーザ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4286097B2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4726572B2 (ja) * | 2005-08-09 | 2011-07-20 | 三洋電機株式会社 | 半導体レーザ装置 |
| US7655953B2 (en) | 2004-08-31 | 2010-02-02 | Sanyo Electric Co., Ltd. | Semiconductor laser apparatus |
| JP2007042944A (ja) * | 2005-08-04 | 2007-02-15 | Rohm Co Ltd | 窒化物半導体素子の製法 |
| JP5098166B2 (ja) * | 2005-12-12 | 2012-12-12 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子及びその製造方法 |
| JP5082504B2 (ja) * | 2006-03-31 | 2012-11-28 | 日亜化学工業株式会社 | 発光素子及び発光素子の製造方法 |
| JP2011009610A (ja) * | 2009-06-29 | 2011-01-13 | Sharp Corp | 窒化物半導体レーザ素子及びウェハ |
| US8564010B2 (en) | 2011-08-04 | 2013-10-22 | Toshiba Techno Center Inc. | Distributed current blocking structures for light emitting diodes |
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2003
- 2003-09-29 JP JP2003336765A patent/JP4286097B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005108917A (ja) | 2005-04-21 |
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