JP4282514B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4282514B2
JP4282514B2 JP2004071294A JP2004071294A JP4282514B2 JP 4282514 B2 JP4282514 B2 JP 4282514B2 JP 2004071294 A JP2004071294 A JP 2004071294A JP 2004071294 A JP2004071294 A JP 2004071294A JP 4282514 B2 JP4282514 B2 JP 4282514B2
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JP
Japan
Prior art keywords
wiring layer
groove
semiconductor device
via hole
manufacturing
Prior art date
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Expired - Fee Related
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JP2004071294A
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English (en)
Japanese (ja)
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JP2005260079A5 (enExample
JP2005260079A (ja
Inventor
工次郎 亀山
彰 鈴木
芳央 岡山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP2004071294A priority Critical patent/JP4282514B2/ja
Publication of JP2005260079A publication Critical patent/JP2005260079A/ja
Publication of JP2005260079A5 publication Critical patent/JP2005260079A5/ja
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Publication of JP4282514B2 publication Critical patent/JP4282514B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H10W20/023—
    • H10W20/0234—
    • H10W20/0242—
    • H10W20/20—
    • H10W20/2125—
    • H10W70/65—
    • H10W72/20—
    • H10W72/244—
    • H10W72/29—
    • H10W72/90—
    • H10W72/922—
    • H10W72/9413—

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2004071294A 2004-03-12 2004-03-12 半導体装置の製造方法 Expired - Fee Related JP4282514B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004071294A JP4282514B2 (ja) 2004-03-12 2004-03-12 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004071294A JP4282514B2 (ja) 2004-03-12 2004-03-12 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2005260079A JP2005260079A (ja) 2005-09-22
JP2005260079A5 JP2005260079A5 (enExample) 2007-04-19
JP4282514B2 true JP4282514B2 (ja) 2009-06-24

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ID=35085497

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JP2004071294A Expired - Fee Related JP4282514B2 (ja) 2004-03-12 2004-03-12 半導体装置の製造方法

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JP (1) JP4282514B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101697573B1 (ko) * 2010-11-29 2017-01-19 삼성전자 주식회사 반도체 장치, 그 제조 방법, 및 상기 반도체 장치를 포함하는 반도체 패키지
FR2970118B1 (fr) * 2010-12-30 2013-12-13 St Microelectronics Crolles 2 Puce de circuits integres et procede de fabrication.
FR2970119B1 (fr) * 2010-12-30 2013-12-13 St Microelectronics Crolles 2 Sas Puce de circuits integres et procede de fabrication.
TWI459485B (zh) 2011-01-17 2014-11-01 精材科技股份有限公司 晶片封裝體的形成方法
SE538058C2 (sv) * 2012-03-30 2016-02-23 Silex Microsystems Ab Metod att tillhandahålla ett viahål och en routing-struktur
CN116344478B (zh) * 2021-12-24 2025-02-25 长鑫存储技术有限公司 一种半导体结构及半导体结构的制备方法
CN115084082B (zh) * 2022-07-19 2022-11-22 甬矽电子(宁波)股份有限公司 扇出型封装结构和扇出型封装方法

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Publication number Publication date
JP2005260079A (ja) 2005-09-22

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