JP4278481B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP4278481B2 JP4278481B2 JP2003362961A JP2003362961A JP4278481B2 JP 4278481 B2 JP4278481 B2 JP 4278481B2 JP 2003362961 A JP2003362961 A JP 2003362961A JP 2003362961 A JP2003362961 A JP 2003362961A JP 4278481 B2 JP4278481 B2 JP 4278481B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- hole
- semiconductor device
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 56
- 238000004519 manufacturing process Methods 0.000 title claims description 35
- 239000010949 copper Substances 0.000 claims description 115
- 238000009792 diffusion process Methods 0.000 claims description 61
- 230000002265 prevention Effects 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 30
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 26
- 229910052802 copper Inorganic materials 0.000 claims description 26
- 238000004544 sputter deposition Methods 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 18
- 230000004888 barrier function Effects 0.000 claims description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims 1
- 239000011229 interlayer Substances 0.000 description 42
- 239000011800 void material Substances 0.000 description 6
- 239000010410 layer Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910021594 Copper(II) fluoride Inorganic materials 0.000 description 1
- -1 Phospho Tetra Ethyl Ortho Silicate Chemical class 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- GWFAVIIMQDUCRA-UHFFFAOYSA-L copper(ii) fluoride Chemical compound [F-].[F-].[Cu+2] GWFAVIIMQDUCRA-UHFFFAOYSA-L 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003362961A JP4278481B2 (ja) | 2003-10-23 | 2003-10-23 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003362961A JP4278481B2 (ja) | 2003-10-23 | 2003-10-23 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005129677A JP2005129677A (ja) | 2005-05-19 |
| JP2005129677A5 JP2005129677A5 (enExample) | 2006-11-30 |
| JP4278481B2 true JP4278481B2 (ja) | 2009-06-17 |
Family
ID=34642416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003362961A Expired - Fee Related JP4278481B2 (ja) | 2003-10-23 | 2003-10-23 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4278481B2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8432037B2 (en) | 2004-06-10 | 2013-04-30 | Renesas Electronics Corporation | Semiconductor device with a line and method of fabrication thereof |
| JP4832807B2 (ja) * | 2004-06-10 | 2011-12-07 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP4786680B2 (ja) * | 2004-06-10 | 2011-10-05 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US20090078580A1 (en) * | 2005-12-02 | 2009-03-26 | Ulvac, Inc. | Method for Forming Cu Film |
| US7488679B2 (en) * | 2006-07-31 | 2009-02-10 | International Business Machines Corporation | Interconnect structure and process of making the same |
| KR20250150667A (ko) * | 2010-02-26 | 2025-10-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
-
2003
- 2003-10-23 JP JP2003362961A patent/JP4278481B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005129677A (ja) | 2005-05-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4832807B2 (ja) | 半導体装置 | |
| TW201843772A (zh) | 多金屬接觸結構 | |
| US20090169760A1 (en) | Copper metallization utilizing reflow on noble metal liners | |
| KR20020068746A (ko) | 콘택 플러그를 구비하는 반도체 소자 및 그의 제조 방법 | |
| US6645863B2 (en) | Method of manufacturing semiconductor device and semiconductor device | |
| JP4278481B2 (ja) | 半導体装置の製造方法 | |
| US6737356B1 (en) | Method of fabricating a semiconductor work object | |
| CN110571189B (zh) | 导电插塞及其形成方法、集成电路 | |
| KR100653997B1 (ko) | 낮은 저항을 갖는 반도체소자의 금속배선 및 그 제조 방법 | |
| KR101090372B1 (ko) | 반도체 소자의 금속 배선 형성방법 | |
| JPH09162281A (ja) | 平坦化多層配線およびその製造方法 | |
| JP5125743B2 (ja) | 半導体装置の製造方法 | |
| JP3521200B2 (ja) | 配線構造およびその形成方法 | |
| US7341940B2 (en) | Method for forming metal wirings of semiconductor device | |
| KR100720526B1 (ko) | 반도체소자의 금속배선 형성방법 | |
| JP2009117633A (ja) | 半導体装置の製造方法 | |
| JP2007180313A (ja) | 半導体装置および半導体装置の製造方法 | |
| TWI705162B (zh) | 阻擋層的去除方法和半導體結構的形成方法 | |
| KR20000005933A (ko) | 집적회로디바이스의접촉부제조방법 | |
| JP2003218201A (ja) | 半導体装置およびその製造方法 | |
| JP2001176872A (ja) | 半導体装置の製造方法 | |
| JPS6113375B2 (enExample) | ||
| KR20080047541A (ko) | 반도체 장치 상에 캐핑 레이어를 형성하는 방법 | |
| KR100720402B1 (ko) | 듀얼 다마센 공정을 이용한 금속 배선 형성 방법 | |
| KR100652300B1 (ko) | 다마신을 이용한 반도체 소자의 금속 배선 제조 방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20061016 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20061016 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20081014 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20081016 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20081120 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20081216 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090210 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20090303 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20090310 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120319 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120319 Year of fee payment: 3 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120319 Year of fee payment: 3 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130319 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130319 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140319 Year of fee payment: 5 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |