JP4276773B2 - 電子線又はx線用ネガ型レジスト組成物 - Google Patents
電子線又はx線用ネガ型レジスト組成物 Download PDFInfo
- Publication number
- JP4276773B2 JP4276773B2 JP2000290578A JP2000290578A JP4276773B2 JP 4276773 B2 JP4276773 B2 JP 4276773B2 JP 2000290578 A JP2000290578 A JP 2000290578A JP 2000290578 A JP2000290578 A JP 2000290578A JP 4276773 B2 JP4276773 B2 JP 4276773B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- compound
- resin
- electron beam
- ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 0 *c1cc(C(c(cc2)ccc2-c2ccccc2)c(cc2I)cc(I)c2O)cc(I)c1O Chemical compound *c1cc(C(c(cc2)ccc2-c2ccccc2)c(cc2I)cc(I)c2O)cc(I)c1O 0.000 description 6
- QGJIHXAASSDNCT-UHFFFAOYSA-N Cc(cc1Cc(cc(C)cc2I)c2O)cc(Cc(cc(C)cc2I)c2O)c1O Chemical compound Cc(cc1Cc(cc(C)cc2I)c2O)cc(Cc(cc(C)cc2I)c2O)c1O QGJIHXAASSDNCT-UHFFFAOYSA-N 0.000 description 1
- TWMGONWXQSKRMH-VOTSOKGWSA-N ClC(c1nc(C(Cl)(Cl)Cl)nc(-c2ccc(/C=C/c3ccccc3)cc2)n1)(Cl)Cl Chemical compound ClC(c1nc(C(Cl)(Cl)Cl)nc(-c2ccc(/C=C/c3ccccc3)cc2)n1)(Cl)Cl TWMGONWXQSKRMH-VOTSOKGWSA-N 0.000 description 1
- JWKRKQYJIZLNFB-ZZXKWVIFSA-N ClC(c1nc(C(Cl)(Cl)Cl)nc(/C=C/c(cc2)ccc2Cl)n1)(Cl)Cl Chemical compound ClC(c1nc(C(Cl)(Cl)Cl)nc(/C=C/c(cc2)ccc2Cl)n1)(Cl)Cl JWKRKQYJIZLNFB-ZZXKWVIFSA-N 0.000 description 1
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- Compositions Of Macromolecular Compounds (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000290578A JP4276773B2 (ja) | 2000-09-25 | 2000-09-25 | 電子線又はx線用ネガ型レジスト組成物 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000290578A JP4276773B2 (ja) | 2000-09-25 | 2000-09-25 | 電子線又はx線用ネガ型レジスト組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002099085A JP2002099085A (ja) | 2002-04-05 |
| JP2002099085A5 JP2002099085A5 (enExample) | 2006-01-12 |
| JP4276773B2 true JP4276773B2 (ja) | 2009-06-10 |
Family
ID=18773787
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000290578A Expired - Lifetime JP4276773B2 (ja) | 2000-09-25 | 2000-09-25 | 電子線又はx線用ネガ型レジスト組成物 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4276773B2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4645789B2 (ja) * | 2001-06-18 | 2011-03-09 | Jsr株式会社 | ネガ型感放射線性樹脂組成物 |
| KR100512171B1 (ko) * | 2003-01-24 | 2005-09-02 | 삼성전자주식회사 | 하층 레지스트용 조성물 |
| JP2007056109A (ja) * | 2005-08-23 | 2007-03-08 | Jsr Corp | 感光性絶縁樹脂組成物およびその硬化物 |
| JP2007056108A (ja) * | 2005-08-23 | 2007-03-08 | Jsr Corp | 感光性絶縁樹脂組成物およびその硬化物 |
| JP5380008B2 (ja) * | 2008-06-20 | 2014-01-08 | 本州化学工業株式会社 | テトラキス(ヒドロキシメチルフェノール)類およびそのホルミル化誘導体のテトラキス(ホルミルフェノール)類 |
| JP6267982B2 (ja) | 2014-02-05 | 2018-01-24 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、感活性光線性又は感放射線性膜を備えたマスクブランクス、パターン形成方法、電子デバイスの製造方法、新規化合物、及び、新規化合物の製造方法 |
| JP6313604B2 (ja) | 2014-02-05 | 2018-04-18 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、感活性光線性又は感放射線性膜を備えたマスクブランクス、パターン形成方法、及び電子デバイスの製造方法 |
| JP6402245B2 (ja) | 2015-04-07 | 2018-10-10 | 富士フイルム株式会社 | ネガ型感活性光線性又は感放射線性樹脂組成物、ネガ型感活性光線性又は感放射線性膜、パターン形成方法、及び、電子デバイスの製造方法 |
-
2000
- 2000-09-25 JP JP2000290578A patent/JP4276773B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002099085A (ja) | 2002-04-05 |
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