JP4274504B2 - 半導体薄膜構造体 - Google Patents

半導体薄膜構造体 Download PDF

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Publication number
JP4274504B2
JP4274504B2 JP26470699A JP26470699A JP4274504B2 JP 4274504 B2 JP4274504 B2 JP 4274504B2 JP 26470699 A JP26470699 A JP 26470699A JP 26470699 A JP26470699 A JP 26470699A JP 4274504 B2 JP4274504 B2 JP 4274504B2
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Japan
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film
substrate
plane
semiconductor
lattice constant
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Expired - Fee Related
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JP26470699A
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Japanese (ja)
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JP2001093837A (ja
JP2001093837A5 (enExample
Inventor
誠一 宮澤
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Canon Inc
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Canon Inc
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Priority to JP26470699A priority Critical patent/JP4274504B2/ja
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  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Recrystallisation Techniques (AREA)
JP26470699A 1999-09-20 1999-09-20 半導体薄膜構造体 Expired - Fee Related JP4274504B2 (ja)

Priority Applications (1)

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JP26470699A JP4274504B2 (ja) 1999-09-20 1999-09-20 半導体薄膜構造体

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Application Number Priority Date Filing Date Title
JP26470699A JP4274504B2 (ja) 1999-09-20 1999-09-20 半導体薄膜構造体

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JP2001093837A JP2001093837A (ja) 2001-04-06
JP2001093837A5 JP2001093837A5 (enExample) 2006-11-02
JP4274504B2 true JP4274504B2 (ja) 2009-06-10

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JP26470699A Expired - Fee Related JP4274504B2 (ja) 1999-09-20 1999-09-20 半導体薄膜構造体

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Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3587081B2 (ja) 1999-05-10 2004-11-10 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体発光素子
JP3555500B2 (ja) 1999-05-21 2004-08-18 豊田合成株式会社 Ｉｉｉ族窒化物半導体及びその製造方法
US6580098B1 (en) 1999-07-27 2003-06-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
JP3427047B2 (ja) * 1999-09-24 2003-07-14 三洋電機株式会社 窒化物系半導体素子、窒化物系半導体の形成方法および窒化物系半導体素子の製造方法
JP4432180B2 (ja) 1999-12-24 2010-03-17 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法、ｉｉｉ族窒化物系化合物半導体素子及びｉｉｉ族窒化物系化合物半導体
JP2001185493A (ja) 1999-12-24 2001-07-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体の製造方法及びｉｉｉ族窒化物系化合物半導体素子
JP2001267242A (ja) 2000-03-14 2001-09-28 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体及びその製造方法
WO2001069663A1 (fr) 2000-03-14 2001-09-20 Toyoda Gosei Co., Ltd. Procede de production de semiconducteur a base de compose de nitrure iii et element en semiconducteur a base de compose de nitrure iii
TW518767B (en) * 2000-03-31 2003-01-21 Toyoda Gosei Kk Production method of III nitride compound semiconductor and III nitride compound semiconductor element
JP2001313259A (ja) 2000-04-28 2001-11-09 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体基板の製造方法及び半導体素子
US7619261B2 (en) 2000-08-07 2009-11-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
JP3556916B2 (ja) * 2000-09-18 2004-08-25 三菱電線工業株式会社 半導体基材の製造方法
EP1367150B1 (en) 2001-02-14 2009-08-19 Toyoda Gosei Co., Ltd. Production method for semiconductor crystal and semiconductor luminous element
JP2002280314A (ja) 2001-03-22 2002-09-27 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体の製造方法、及びそれに基づくｉｉｉ族窒化物系化合物半導体素子
JP3690326B2 (ja) 2001-10-12 2005-08-31 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法
WO2003054937A1 (en) * 2001-12-20 2003-07-03 Matsushita Electric Industrial Co., Ltd. Method for making nitride semiconductor substrate and method for making nitride semiconductor device
JP2010532916A (ja) * 2007-07-12 2010-10-14 ラティス パワー （チアンシ） コーポレイション 区割りされた基板に作成された半導体デバイスに対する高品質境界を取得するための方法
JP5204046B2 (ja) * 2009-06-25 2013-06-05 シャープ株式会社 窒化物半導体ウェハ、窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP2015521365A (ja) * 2012-04-13 2015-07-27 タンデム スン アーベー エピタキシャル成長に基づく半導体メソッドデバイスの製造方法
CN113314398B (zh) * 2021-05-25 2024-02-06 中国科学院苏州纳米技术与纳米仿生研究所 在GaP/Si衬底上外延生长InGaAs薄膜的方法及InGaAs薄膜

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