JP4261303B2 - 水酸化され、光酸で切断可能な基を有するフォトレジスト - Google Patents

水酸化され、光酸で切断可能な基を有するフォトレジスト Download PDF

Info

Publication number
JP4261303B2
JP4261303B2 JP2003346258A JP2003346258A JP4261303B2 JP 4261303 B2 JP4261303 B2 JP 4261303B2 JP 2003346258 A JP2003346258 A JP 2003346258A JP 2003346258 A JP2003346258 A JP 2003346258A JP 4261303 B2 JP4261303 B2 JP 4261303B2
Authority
JP
Japan
Prior art keywords
alkyl
photoresist
ether oxygen
substituted
acrylate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003346258A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004280049A5 (enExample
JP2004280049A (ja
Inventor
ブラウン ファーンハム ウィリアム
エル．フェアリング アンドリュー
エル．シャド ザ サード フランク
ウェイミン キゥ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of JP2004280049A publication Critical patent/JP2004280049A/ja
Publication of JP2004280049A5 publication Critical patent/JP2004280049A5/ja
Application granted granted Critical
Publication of JP4261303B2 publication Critical patent/JP4261303B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2003346258A 2002-10-03 2003-10-03 水酸化され、光酸で切断可能な基を有するフォトレジスト Expired - Fee Related JP4261303B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US41585502P 2002-10-03 2002-10-03

Publications (3)

Publication Number Publication Date
JP2004280049A JP2004280049A (ja) 2004-10-07
JP2004280049A5 JP2004280049A5 (enExample) 2006-10-05
JP4261303B2 true JP4261303B2 (ja) 2009-04-30

Family

ID=32043433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003346258A Expired - Fee Related JP4261303B2 (ja) 2002-10-03 2003-10-03 水酸化され、光酸で切断可能な基を有するフォトレジスト

Country Status (5)

Country Link
US (1) US7022457B2 (enExample)
EP (1) EP1411389A1 (enExample)
JP (1) JP4261303B2 (enExample)
KR (1) KR101017801B1 (enExample)
TW (1) TW200417818A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4289937B2 (ja) * 2003-03-28 2009-07-01 東京応化工業株式会社 ホトレジスト組成物及びそれを用いたレジストパターン形成方法
US7132218B2 (en) * 2004-03-23 2006-11-07 Sumitomo Chemical Company, Limited Chemically amplified positive resist composition
JP4628809B2 (ja) * 2005-02-01 2011-02-09 東京応化工業株式会社 ネガ型レジスト組成物およびレジストパターン形成方法
US7358029B2 (en) * 2005-09-29 2008-04-15 International Business Machines Corporation Low activation energy dissolution modification agents for photoresist applications
JP4684139B2 (ja) * 2005-10-17 2011-05-18 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP2010085921A (ja) * 2008-10-02 2010-04-15 Panasonic Corp レジスト材料及びそれを用いたパターン形成方法
JP6774214B2 (ja) * 2015-05-08 2020-10-21 住友化学株式会社 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法
JP7191981B2 (ja) * 2018-12-21 2022-12-19 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び電子デバイスの製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1020463A (ja) * 1996-07-04 1998-01-23 Konica Corp ハロゲン化銀カラー写真感光材料
US6280897B1 (en) 1996-12-24 2001-08-28 Kabushiki Kaisha Toshiba Photosensitive composition, method for forming pattern using the same, and method for manufacturing electronic parts
EP1183571B1 (en) * 1999-05-04 2010-06-02 E.I. Du Pont De Nemours And Company Fluorinated photoresists and processes for microlithography
US6596458B1 (en) * 1999-05-07 2003-07-22 Fuji Photo Film Co., Ltd. Positive-working photoresist composition
KR100535149B1 (ko) * 1999-08-17 2005-12-07 주식회사 하이닉스반도체 신규의 포토레지스트용 공중합체 및 이를 이용한 포토레지스트조성물
JP4838437B2 (ja) * 2000-06-16 2011-12-14 Ｊｓｒ株式会社 感放射線性樹脂組成物
WO2002031596A1 (en) * 2000-10-12 2002-04-18 University Of North Carolina At Chapel Hill Co2-processes photoresists, polymers, and photoactive compounds for microlithography

Also Published As

Publication number Publication date
KR101017801B1 (ko) 2011-02-28
KR20040031635A (ko) 2004-04-13
US7022457B2 (en) 2006-04-04
US20040126697A1 (en) 2004-07-01
EP1411389A1 (en) 2004-04-21
TW200417818A (en) 2004-09-16
JP2004280049A (ja) 2004-10-07

Similar Documents

Publication Publication Date Title
JP4327360B2 (ja) ホトレジスト、ポリマーおよびマイクロリソグラフィの方法
US6872503B2 (en) Copolymers for photoresists and processes therefor
JP4402304B2 (ja) フッ素化ポリマー、フォトレジストおよびミクロリソグラフィーのための方法
EP1730593B1 (en) A process of imaging a deep ultraviolet photoresist with a top coating
US8828641B2 (en) Chemically amplified resist composition and patterning process
US20040023150A1 (en) Photoresists, polymers and processes for microlithography
JP2004500596A (ja) ニトリル／フルオロアルコールポリマー含有フォトレジストおよび関連するミクロリソグラフィのための方法
JP4303202B2 (ja) 弗素化ポリマー、フォトレジストおよびミクロ平版印刷のための方法
US20040166434A1 (en) Photoresist composition for deep ultraviolet lithography
JP2005532413A (ja) エステル基を有するフッ素化ポリマー、およびマイクロリソグラフィー用フォトレジスト
US20030211417A1 (en) Polymers for photoresist compositions for microlithography
JPWO2006011427A1 (ja) 含フッ素化合物、含フッ素ポリマー、レジスト組成物、およびレジスト保護膜組成物
EP1341041A2 (en) Photoresist compositions
JP4261303B2 (ja) 水酸化され、光酸で切断可能な基を有するフォトレジスト
JP4610335B2 (ja) フォトレジストとして有用な縮合４員環状炭素を有する多環式基を有するフッ素化ポリマーおよび微細平版印刷のための方法
JP2003532932A (ja) マイクロリソグラフィのフォトレジスト組成物に用いられるポリマー
EP1551886B1 (en) Fluorinated polymers useful as photoresists, and processes for microlithography
JP2005535780A (ja) フォトレジスト、フルオロポリマーおよび１５７ｎｍ微細平版印刷のための方法
JP2005015651A (ja) 含フッ素ポリマーおよびレジスト組成物

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060817

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060817

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090109

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090205

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120220

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130220

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130220

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140220

Year of fee payment: 5

LAPS Cancellation because of no payment of annual fees