JP4260334B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4260334B2
JP4260334B2 JP2000090797A JP2000090797A JP4260334B2 JP 4260334 B2 JP4260334 B2 JP 4260334B2 JP 2000090797 A JP2000090797 A JP 2000090797A JP 2000090797 A JP2000090797 A JP 2000090797A JP 4260334 B2 JP4260334 B2 JP 4260334B2
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Prior art keywords
film
insulating film
tft
contact hole
region
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Expired - Fee Related
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JP2000090797A
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Japanese (ja)
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JP2000349300A (ja
JP2000349300A5 (enExample
Inventor
英臣 須沢
義弘 楠山
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000090797A priority Critical patent/JP4260334B2/ja
Publication of JP2000349300A publication Critical patent/JP2000349300A/ja
Publication of JP2000349300A5 publication Critical patent/JP2000349300A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Liquid Crystal (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2000090797A 1999-03-29 2000-03-29 半導体装置の作製方法 Expired - Fee Related JP4260334B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000090797A JP4260334B2 (ja) 1999-03-29 2000-03-29 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP8701799 1999-03-29
JP11-87017 1999-03-29
JP2000090797A JP4260334B2 (ja) 1999-03-29 2000-03-29 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2000349300A JP2000349300A (ja) 2000-12-15
JP2000349300A5 JP2000349300A5 (enExample) 2005-09-08
JP4260334B2 true JP4260334B2 (ja) 2009-04-30

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JP2000090797A Expired - Fee Related JP4260334B2 (ja) 1999-03-29 2000-03-29 半導体装置の作製方法

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JP (1) JP4260334B2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014053369A (ja) * 2012-09-05 2014-03-20 Toshiba Corp 半導体装置およびその製造方法
JP2019096848A (ja) * 2017-11-28 2019-06-20 パナソニックＩｐマネジメント株式会社 半導体装置およびその製造方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4674994B2 (ja) * 2000-05-29 2011-04-20 株式会社半導体エネルギー研究所 電気光学装置の作製方法
KR100803177B1 (ko) * 2001-05-14 2008-02-14 삼성전자주식회사 액정표시장치용 박막 트랜지스터 및 그 제조방법
JP2005085884A (ja) 2003-09-05 2005-03-31 Rohm Co Ltd 半導体装置およびその製造方法
JP5891846B2 (ja) * 2012-02-24 2016-03-23 富士通セミコンダクター株式会社 半導体装置の製造方法
CN105470197B (zh) * 2016-01-28 2018-03-06 武汉华星光电技术有限公司 低温多晶硅阵列基板的制作方法
JP7061941B2 (ja) * 2018-08-06 2022-05-02 東京エレクトロン株式会社 エッチング方法及び半導体デバイスの製造方法
CN210110300U (zh) * 2019-08-16 2020-02-21 北京京东方技术开发有限公司 像素驱动电路、阵列基板和显示装置
CN111679454B (zh) * 2020-06-19 2023-07-07 联合微电子中心有限责任公司 半导体器件的制备方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014053369A (ja) * 2012-09-05 2014-03-20 Toshiba Corp 半導体装置およびその製造方法
JP2019096848A (ja) * 2017-11-28 2019-06-20 パナソニックＩｐマネジメント株式会社 半導体装置およびその製造方法
JP7054797B2 (ja) 2017-11-28 2022-04-15 パナソニックＩｐマネジメント株式会社 半導体装置およびその製造方法

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Publication number Publication date
JP2000349300A (ja) 2000-12-15

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