JP4256114B2 - 磁気ランダムアクセスメモリ - Google Patents

磁気ランダムアクセスメモリ Download PDF

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Publication number
JP4256114B2
JP4256114B2 JP2002153037A JP2002153037A JP4256114B2 JP 4256114 B2 JP4256114 B2 JP 4256114B2 JP 2002153037 A JP2002153037 A JP 2002153037A JP 2002153037 A JP2002153037 A JP 2002153037A JP 4256114 B2 JP4256114 B2 JP 4256114B2
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JP2002153037A
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Japanese (ja)
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JP2003249629A (ja
JP2003249629A5 (enExample
Inventor
佳久 岩田
知輝 東
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Toshiba Corp
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Toshiba Corp
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JP2002153037A 2001-12-21 2002-05-27 磁気ランダムアクセスメモリ Expired - Fee Related JP4256114B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002153037A JP4256114B2 (ja) 2001-12-21 2002-05-27 磁気ランダムアクセスメモリ

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001390518 2001-12-21
JP2001-390518 2001-12-21
JP2002153037A JP4256114B2 (ja) 2001-12-21 2002-05-27 磁気ランダムアクセスメモリ

Publications (3)

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JP2003249629A JP2003249629A (ja) 2003-09-05
JP2003249629A5 JP2003249629A5 (enExample) 2005-10-06
JP4256114B2 true JP4256114B2 (ja) 2009-04-22

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JP2002153037A Expired - Fee Related JP4256114B2 (ja) 2001-12-21 2002-05-27 磁気ランダムアクセスメモリ

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4819316B2 (ja) 2004-02-23 2011-11-24 ルネサスエレクトロニクス株式会社 半導体装置
JP2006031795A (ja) 2004-07-14 2006-02-02 Renesas Technology Corp 不揮発性半導体記憶装置
JP3913258B2 (ja) 2005-06-30 2007-05-09 シャープ株式会社 半導体記憶装置
JP2009054788A (ja) * 2007-08-27 2009-03-12 Renesas Technology Corp 半導体装置
US8315079B2 (en) * 2010-10-07 2012-11-20 Crossbar, Inc. Circuit for concurrent read operation and method therefor
US9824738B2 (en) 2016-03-11 2017-11-21 Toshiba Memory Corporation Semiconductor storage device
CN111192614B (zh) * 2019-12-30 2023-11-07 上海集成电路研发中心有限公司 一种存储器阵列结构

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JP2003249629A (ja) 2003-09-05

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