JP4245446B2 - 半導体素子の製造方法 - Google Patents
半導体素子の製造方法 Download PDFInfo
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- JP4245446B2 JP4245446B2 JP2003329516A JP2003329516A JP4245446B2 JP 4245446 B2 JP4245446 B2 JP 4245446B2 JP 2003329516 A JP2003329516 A JP 2003329516A JP 2003329516 A JP2003329516 A JP 2003329516A JP 4245446 B2 JP4245446 B2 JP 4245446B2
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- Japan
- Prior art keywords
- insulating film
- forming
- wiring
- manufacturing
- planarization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Description
2 半導体基板
3 配線下絶縁膜
4 下層配線
5 下地絶縁膜
6 埋込み絶縁膜
7a 厚い平坦化絶縁膜
7b 平坦化絶縁膜
8 上層絶縁膜
9 コンタクトホール
10 上層配線
21 供給プレート
22 供給口
23 容器
24 有機シリカ液
25 内部ヒータ
26 熱プレート
41 従来の半導体素子
42 半導体基板
43 配線下絶縁膜
44 下層配線
45 下地絶縁膜
46 埋込み絶縁膜
47 平坦化絶縁膜
48 上層絶縁膜
49コンタクトホール
50 上層配線
Claims (2)
- 下層配線上に下層絶縁膜を形成する工程と、前記下層絶縁膜上に平坦化絶縁膜を形成する工程と、前記前記下層絶縁膜の一部と平坦化絶縁膜をエッチバックする工程と、前記下層絶縁膜と前記平坦化膜上に上層絶縁膜を形成する工程と、前記下層絶縁膜及び上層絶縁膜にコンタクトホールを形成する工程と、前記コンタクトホールを介して前記下層配線に接続する上層配線を形成する工程を備える半導体素子の製造方法であって、前記下層絶縁膜上に前記平坦化絶縁膜を形成する際に、複数の供給口を有する供給プレートから前記平坦化絶縁膜の材料を前記下層絶縁膜上に回転塗布した後、熱プレートにより上部から加圧しながら乾燥させることを特徴とする半導体素子の製造方法。
- 下層配線上に下層絶縁膜を形成する工程と、前記下層絶縁膜上に平坦化絶縁膜を形成する工程と、前記下層絶縁膜と前記平坦化絶縁膜にコンタクトホールを形成する工程と、前記コンタクトホールを介して前記下層配線に接続する上層配線を形成する工程を備える半導体素子の製造方法であって、前記下層絶縁膜上に前記平坦化絶縁膜を形成する際に、複数の供給口を有する供給プレートから前記平坦化絶縁膜の材料を前記下層絶縁膜上に回転塗布した後、熱プレートにより上部から加圧しながら乾燥させることを特徴とする半導体素子の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2003329516A JP4245446B2 (ja) | 2003-09-22 | 2003-09-22 | 半導体素子の製造方法 |
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JP2003329516A JP4245446B2 (ja) | 2003-09-22 | 2003-09-22 | 半導体素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005101036A JP2005101036A (ja) | 2005-04-14 |
JP4245446B2 true JP4245446B2 (ja) | 2009-03-25 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2003329516A Expired - Fee Related JP4245446B2 (ja) | 2003-09-22 | 2003-09-22 | 半導体素子の製造方法 |
Country Status (1)
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JP (1) | JP4245446B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6930251B2 (ja) * | 2017-07-03 | 2021-09-01 | 東京エレクトロン株式会社 | 塗布膜形成方法、塗布膜形成装置及び記憶媒体 |
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2003
- 2003-09-22 JP JP2003329516A patent/JP4245446B2/ja not_active Expired - Fee Related
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JP2005101036A (ja) | 2005-04-14 |
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