JP4227097B2 - ３入力感度増幅器及び動作方法 - Google Patents

３入力感度増幅器及び動作方法 Download PDF

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Publication number
JP4227097B2
JP4227097B2 JP2004517520A JP2004517520A JP4227097B2 JP 4227097 B2 JP4227097 B2 JP 4227097B2 JP 2004517520 A JP2004517520 A JP 2004517520A JP 2004517520 A JP2004517520 A JP 2004517520A JP 4227097 B2 JP4227097 B2 JP 4227097B2
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JP
Japan
Prior art keywords
transistor
current electrode
output
current
coupled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004517520A
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English (en)
Japanese (ja)
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JP2005531874A (ja
JP2005531874A5 (https=
Inventor
ケイ． サブラマニアン、チトラ
ジェイ． ガーニ、ブラッドリー
ジェイ． ナハス、ジョセフ
ダブリュ． アンドレ、トーマス
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NXP USA Inc
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NXP USA Inc
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Publication date
Application filed by NXP USA Inc filed Critical NXP USA Inc
Publication of JP2005531874A publication Critical patent/JP2005531874A/ja
Publication of JP2005531874A5 publication Critical patent/JP2005531874A5/ja
Application granted granted Critical
Publication of JP4227097B2 publication Critical patent/JP4227097B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/063—Current sense amplifiers

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
JP2004517520A 2002-06-28 2003-04-24 ３入力感度増幅器及び動作方法 Expired - Fee Related JP4227097B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/186,363 US6580298B1 (en) 2002-06-28 2002-06-28 Three input sense amplifier and method of operation
PCT/US2003/012801 WO2004003918A1 (en) 2002-06-28 2003-04-24 Three input sense amplifier and method of operation

Publications (3)

Publication Number Publication Date
JP2005531874A JP2005531874A (ja) 2005-10-20
JP2005531874A5 JP2005531874A5 (https=) 2006-04-27
JP4227097B2 true JP4227097B2 (ja) 2009-02-18

Family

ID=22684645

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004517520A Expired - Fee Related JP4227097B2 (ja) 2002-06-28 2003-04-24 ３入力感度増幅器及び動作方法

Country Status (6)

Country Link
US (1) US6580298B1 (https=)
JP (1) JP4227097B2 (https=)
KR (1) KR100901933B1 (https=)
AU (1) AU2003225151A1 (https=)
TW (1) TWI301278B (https=)
WO (1) WO2004003918A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4071531B2 (ja) * 2002-04-23 2008-04-02 株式会社ルネサステクノロジ 薄膜磁性体記憶装置
US8537606B2 (en) 2011-01-21 2013-09-17 Qualcomm Incorporated Read sensing circuit and method with equalization timing
US8331166B2 (en) 2011-02-28 2012-12-11 Infineon Techn. AG Method and system for reading from memory cells in a memory device
US9460785B2 (en) * 2014-03-06 2016-10-04 Kabushiki Kaisha Toshiba Semiconductor storage device
CN105741874B (zh) * 2014-12-08 2019-10-25 中芯国际集成电路制造(上海)有限公司 用于快闪存储器的双位线读出电路和读出方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58125282A (ja) * 1982-01-20 1983-07-26 Hitachi Ltd Ｒｏｍ装置用センスアンプ
JPS59218696A (ja) * 1983-05-26 1984-12-08 Toshiba Corp 半導体メモリ
US4713797A (en) 1985-11-25 1987-12-15 Motorola Inc. Current mirror sense amplifier for a non-volatile memory
US4791324A (en) * 1987-04-10 1988-12-13 Motorola, Inc. CMOS differential-amplifier sense amplifier
US5289414A (en) * 1991-09-27 1994-02-22 Matsushita Electric Industrial Co., Ltd. Comparator
EP0631144A1 (en) * 1993-06-24 1994-12-28 Koninklijke Philips Electronics N.V. High voltage differential sensor having a capacitive attenuator
US5488322A (en) * 1994-08-29 1996-01-30 Kaplinsky; Cecil H. Digital interface circuit with dual switching points for increased speed
JP3558844B2 (ja) * 1997-11-28 2004-08-25 シャープ株式会社 センスアンプ回路
US6191989B1 (en) 2000-03-07 2001-02-20 International Business Machines Corporation Current sensing amplifier
US6269040B1 (en) 2000-06-26 2001-07-31 International Business Machines Corporation Interconnection network for connecting memory cells to sense amplifiers
US6407588B1 (en) * 2000-08-28 2002-06-18 Micron Technology, Inc. High speed low power input buffer

Also Published As

Publication number Publication date
JP2005531874A (ja) 2005-10-20
KR100901933B1 (ko) 2009-06-10
KR20050024399A (ko) 2005-03-10
WO2004003918A1 (en) 2004-01-08
TW200402069A (en) 2004-02-01
US6580298B1 (en) 2003-06-17
AU2003225151A1 (en) 2004-01-19
TWI301278B (en) 2008-09-21

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