TWI301278B - Three input sense amplifier and method of operation - Google Patents
Three input sense amplifier and method of operation Download PDFInfo
- Publication number
- TWI301278B TWI301278B TW092117435A TW92117435A TWI301278B TW I301278 B TWI301278 B TW I301278B TW 092117435 A TW092117435 A TW 092117435A TW 92117435 A TW92117435 A TW 92117435A TW I301278 B TWI301278 B TW I301278B
- Authority
- TW
- Taiwan
- Prior art keywords
- transistor
- current
- output
- current electrode
- electrode
- Prior art date
Links
- 238000000034 method Methods 0.000 title description 8
- 230000008859 change Effects 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 230000004044 response Effects 0.000 claims 1
- 239000004020 conductor Substances 0.000 description 106
- 230000008901 benefit Effects 0.000 description 9
- 239000013078 crystal Substances 0.000 description 9
- 230000003071 parasitic effect Effects 0.000 description 6
- 238000003491 array Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000012925 reference material Substances 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 241000238366 Cephalopoda Species 0.000 description 1
- 206010011469 Crying Diseases 0.000 description 1
- 101100236208 Homo sapiens LTB4R gene Proteins 0.000 description 1
- 102100033374 Leukotriene B4 receptor 1 Human genes 0.000 description 1
- 241000282376 Panthera tigris Species 0.000 description 1
- 101100437750 Schizosaccharomyces pombe (strain 972 / ATCC 24843) blt1 gene Proteins 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002688 persistence Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000013643 reference control Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1655—Bit-line or column circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/06—Sense amplifier related aspects
- G11C2207/063—Current sense amplifiers
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/186,363 US6580298B1 (en) | 2002-06-28 | 2002-06-28 | Three input sense amplifier and method of operation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200402069A TW200402069A (en) | 2004-02-01 |
| TWI301278B true TWI301278B (en) | 2008-09-21 |
Family
ID=22684645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092117435A TWI301278B (en) | 2002-06-28 | 2003-06-26 | Three input sense amplifier and method of operation |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6580298B1 (https=) |
| JP (1) | JP4227097B2 (https=) |
| KR (1) | KR100901933B1 (https=) |
| AU (1) | AU2003225151A1 (https=) |
| TW (1) | TWI301278B (https=) |
| WO (1) | WO2004003918A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4071531B2 (ja) * | 2002-04-23 | 2008-04-02 | 株式会社ルネサステクノロジ | 薄膜磁性体記憶装置 |
| US8537606B2 (en) | 2011-01-21 | 2013-09-17 | Qualcomm Incorporated | Read sensing circuit and method with equalization timing |
| US8331166B2 (en) | 2011-02-28 | 2012-12-11 | Infineon Techn. AG | Method and system for reading from memory cells in a memory device |
| US9460785B2 (en) * | 2014-03-06 | 2016-10-04 | Kabushiki Kaisha Toshiba | Semiconductor storage device |
| CN105741874B (zh) * | 2014-12-08 | 2019-10-25 | 中芯国际集成电路制造(上海)有限公司 | 用于快闪存储器的双位线读出电路和读出方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58125282A (ja) * | 1982-01-20 | 1983-07-26 | Hitachi Ltd | Ｒｏｍ装置用センスアンプ |
| JPS59218696A (ja) * | 1983-05-26 | 1984-12-08 | Toshiba Corp | 半導体メモリ |
| US4713797A (en) | 1985-11-25 | 1987-12-15 | Motorola Inc. | Current mirror sense amplifier for a non-volatile memory |
| US4791324A (en) * | 1987-04-10 | 1988-12-13 | Motorola, Inc. | CMOS differential-amplifier sense amplifier |
| US5289414A (en) * | 1991-09-27 | 1994-02-22 | Matsushita Electric Industrial Co., Ltd. | Comparator |
| EP0631144A1 (en) * | 1993-06-24 | 1994-12-28 | Koninklijke Philips Electronics N.V. | High voltage differential sensor having a capacitive attenuator |
| US5488322A (en) * | 1994-08-29 | 1996-01-30 | Kaplinsky; Cecil H. | Digital interface circuit with dual switching points for increased speed |
| JP3558844B2 (ja) * | 1997-11-28 | 2004-08-25 | シャープ株式会社 | センスアンプ回路 |
| US6191989B1 (en) | 2000-03-07 | 2001-02-20 | International Business Machines Corporation | Current sensing amplifier |
| US6269040B1 (en) | 2000-06-26 | 2001-07-31 | International Business Machines Corporation | Interconnection network for connecting memory cells to sense amplifiers |
| US6407588B1 (en) * | 2000-08-28 | 2002-06-18 | Micron Technology, Inc. | High speed low power input buffer |
-
2002
- 2002-06-28 US US10/186,363 patent/US6580298B1/en not_active Expired - Lifetime
-
2003
- 2003-04-24 WO PCT/US2003/012801 patent/WO2004003918A1/en not_active Ceased
- 2003-04-24 KR KR1020047021250A patent/KR100901933B1/ko not_active Expired - Fee Related
- 2003-04-24 AU AU2003225151A patent/AU2003225151A1/en not_active Abandoned
- 2003-04-24 JP JP2004517520A patent/JP4227097B2/ja not_active Expired - Fee Related
- 2003-06-26 TW TW092117435A patent/TWI301278B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005531874A (ja) | 2005-10-20 |
| KR100901933B1 (ko) | 2009-06-10 |
| KR20050024399A (ko) | 2005-03-10 |
| WO2004003918A1 (en) | 2004-01-08 |
| JP4227097B2 (ja) | 2009-02-18 |
| TW200402069A (en) | 2004-02-01 |
| US6580298B1 (en) | 2003-06-17 |
| AU2003225151A1 (en) | 2004-01-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |