AU2003225151A1 - Three input sense amplifier and method of operation - Google Patents

Three input sense amplifier and method of operation

Info

Publication number
AU2003225151A1
AU2003225151A1 AU2003225151A AU2003225151A AU2003225151A1 AU 2003225151 A1 AU2003225151 A1 AU 2003225151A1 AU 2003225151 A AU2003225151 A AU 2003225151A AU 2003225151 A AU2003225151 A AU 2003225151A AU 2003225151 A1 AU2003225151 A1 AU 2003225151A1
Authority
AU
Australia
Prior art keywords
sense amplifier
input sense
input
amplifier
sense
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003225151A
Other languages
English (en)
Inventor
Thomas W. Andre
Bradley J. Garni
Joseph J. Nahas
Chitra K. Subramanian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2003225151A1 publication Critical patent/AU2003225151A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/063—Current sense amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
AU2003225151A 2002-06-28 2003-04-24 Three input sense amplifier and method of operation Abandoned AU2003225151A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/186,363 2002-06-28
US10/186,363 US6580298B1 (en) 2002-06-28 2002-06-28 Three input sense amplifier and method of operation
PCT/US2003/012801 WO2004003918A1 (en) 2002-06-28 2003-04-24 Three input sense amplifier and method of operation

Publications (1)

Publication Number Publication Date
AU2003225151A1 true AU2003225151A1 (en) 2004-01-19

Family

ID=22684645

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003225151A Abandoned AU2003225151A1 (en) 2002-06-28 2003-04-24 Three input sense amplifier and method of operation

Country Status (6)

Country Link
US (1) US6580298B1 (https=)
JP (1) JP4227097B2 (https=)
KR (1) KR100901933B1 (https=)
AU (1) AU2003225151A1 (https=)
TW (1) TWI301278B (https=)
WO (1) WO2004003918A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4071531B2 (ja) * 2002-04-23 2008-04-02 株式会社ルネサステクノロジ 薄膜磁性体記憶装置
US8537606B2 (en) 2011-01-21 2013-09-17 Qualcomm Incorporated Read sensing circuit and method with equalization timing
US8331166B2 (en) 2011-02-28 2012-12-11 Infineon Techn. AG Method and system for reading from memory cells in a memory device
US9460785B2 (en) * 2014-03-06 2016-10-04 Kabushiki Kaisha Toshiba Semiconductor storage device
CN105741874B (zh) * 2014-12-08 2019-10-25 中芯国际集成电路制造(上海)有限公司 用于快闪存储器的双位线读出电路和读出方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58125282A (ja) * 1982-01-20 1983-07-26 Hitachi Ltd Ｒｏｍ装置用センスアンプ
JPS59218696A (ja) * 1983-05-26 1984-12-08 Toshiba Corp 半導体メモリ
US4713797A (en) 1985-11-25 1987-12-15 Motorola Inc. Current mirror sense amplifier for a non-volatile memory
US4791324A (en) * 1987-04-10 1988-12-13 Motorola, Inc. CMOS differential-amplifier sense amplifier
US5289414A (en) * 1991-09-27 1994-02-22 Matsushita Electric Industrial Co., Ltd. Comparator
EP0631144A1 (en) * 1993-06-24 1994-12-28 Koninklijke Philips Electronics N.V. High voltage differential sensor having a capacitive attenuator
US5488322A (en) * 1994-08-29 1996-01-30 Kaplinsky; Cecil H. Digital interface circuit with dual switching points for increased speed
JP3558844B2 (ja) * 1997-11-28 2004-08-25 シャープ株式会社 センスアンプ回路
US6191989B1 (en) 2000-03-07 2001-02-20 International Business Machines Corporation Current sensing amplifier
US6269040B1 (en) 2000-06-26 2001-07-31 International Business Machines Corporation Interconnection network for connecting memory cells to sense amplifiers
US6407588B1 (en) * 2000-08-28 2002-06-18 Micron Technology, Inc. High speed low power input buffer

Also Published As

Publication number Publication date
JP2005531874A (ja) 2005-10-20
KR100901933B1 (ko) 2009-06-10
KR20050024399A (ko) 2005-03-10
WO2004003918A1 (en) 2004-01-08
JP4227097B2 (ja) 2009-02-18
TW200402069A (en) 2004-02-01
US6580298B1 (en) 2003-06-17
TWI301278B (en) 2008-09-21

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase