JP2005531874A5 - - Google Patents

Download PDF

Info

Publication number
JP2005531874A5
JP2005531874A5 JP2004517520A JP2004517520A JP2005531874A5 JP 2005531874 A5 JP2005531874 A5 JP 2005531874A5 JP 2004517520 A JP2004517520 A JP 2004517520A JP 2004517520 A JP2004517520 A JP 2004517520A JP 2005531874 A5 JP2005531874 A5 JP 2005531874A5
Authority
JP
Japan
Prior art keywords
transistor
current electrode
coupled
differential
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004517520A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005531874A (ja
JP4227097B2 (ja
Filing date
Publication date
Priority claimed from US10/186,363 external-priority patent/US6580298B1/en
Application filed filed Critical
Publication of JP2005531874A publication Critical patent/JP2005531874A/ja
Publication of JP2005531874A5 publication Critical patent/JP2005531874A5/ja
Application granted granted Critical
Publication of JP4227097B2 publication Critical patent/JP4227097B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2004517520A 2002-06-28 2003-04-24 ３入力感度増幅器及び動作方法 Expired - Fee Related JP4227097B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/186,363 US6580298B1 (en) 2002-06-28 2002-06-28 Three input sense amplifier and method of operation
PCT/US2003/012801 WO2004003918A1 (en) 2002-06-28 2003-04-24 Three input sense amplifier and method of operation

Publications (3)

Publication Number Publication Date
JP2005531874A JP2005531874A (ja) 2005-10-20
JP2005531874A5 true JP2005531874A5 (https=) 2006-04-27
JP4227097B2 JP4227097B2 (ja) 2009-02-18

Family

ID=22684645

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004517520A Expired - Fee Related JP4227097B2 (ja) 2002-06-28 2003-04-24 ３入力感度増幅器及び動作方法

Country Status (6)

Country Link
US (1) US6580298B1 (https=)
JP (1) JP4227097B2 (https=)
KR (1) KR100901933B1 (https=)
AU (1) AU2003225151A1 (https=)
TW (1) TWI301278B (https=)
WO (1) WO2004003918A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4071531B2 (ja) * 2002-04-23 2008-04-02 株式会社ルネサステクノロジ 薄膜磁性体記憶装置
US8537606B2 (en) 2011-01-21 2013-09-17 Qualcomm Incorporated Read sensing circuit and method with equalization timing
US8331166B2 (en) 2011-02-28 2012-12-11 Infineon Techn. AG Method and system for reading from memory cells in a memory device
US9460785B2 (en) * 2014-03-06 2016-10-04 Kabushiki Kaisha Toshiba Semiconductor storage device
CN105741874B (zh) * 2014-12-08 2019-10-25 中芯国际集成电路制造(上海)有限公司 用于快闪存储器的双位线读出电路和读出方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58125282A (ja) * 1982-01-20 1983-07-26 Hitachi Ltd Ｒｏｍ装置用センスアンプ
JPS59218696A (ja) * 1983-05-26 1984-12-08 Toshiba Corp 半導体メモリ
US4713797A (en) 1985-11-25 1987-12-15 Motorola Inc. Current mirror sense amplifier for a non-volatile memory
US4791324A (en) * 1987-04-10 1988-12-13 Motorola, Inc. CMOS differential-amplifier sense amplifier
US5289414A (en) * 1991-09-27 1994-02-22 Matsushita Electric Industrial Co., Ltd. Comparator
EP0631144A1 (en) * 1993-06-24 1994-12-28 Koninklijke Philips Electronics N.V. High voltage differential sensor having a capacitive attenuator
US5488322A (en) * 1994-08-29 1996-01-30 Kaplinsky; Cecil H. Digital interface circuit with dual switching points for increased speed
JP3558844B2 (ja) * 1997-11-28 2004-08-25 シャープ株式会社 センスアンプ回路
US6191989B1 (en) 2000-03-07 2001-02-20 International Business Machines Corporation Current sensing amplifier
US6269040B1 (en) 2000-06-26 2001-07-31 International Business Machines Corporation Interconnection network for connecting memory cells to sense amplifiers
US6407588B1 (en) * 2000-08-28 2002-06-18 Micron Technology, Inc. High speed low power input buffer

Similar Documents

Publication Publication Date Title
KR101257340B1 (ko) 비-휘발성 상태 보유 래치들
JP2006505082A5 (https=)
JP2000306382A5 (https=)
US7889585B2 (en) Balancing a signal margin of a resistance based memory circuit
TW200514348A (en) Differential amplifier and bit-line sense amplifier adopting the same
JP2003178574A5 (https=)
TW200701228A (en) Voltage supply circuit and semiconductor memory
JP2005267837A5 (https=)
JP2009537933A5 (https=)
JP2000030450A5 (https=)
JPH11203866A5 (https=)
JP2006500725A5 (https=)
JP2005531874A5 (https=)
TW200511309A (en) Memory device and method of amplifying voltage levels of bit line and complementary bit line
ATE360918T1 (de) Geschützte leistungsschaltungen
TWI270073B (en) Memory device
CN1129909C (zh) 读出放大器
JP2007164922A5 (https=)
US6700415B2 (en) Sense amplifier with configurable voltage swing control
JP2009545835A5 (https=)
CN1154113C (zh) 电流传感放大器
DE602004017664D1 (de) Statische Direktzugriffspeicherzelle (SRAM) und Speichereinheit die diese enthält mit extrem niedrigem Leistungsverbrauch
JP3609260B2 (ja) 半導体装置の増幅回路
CN101783162B (zh) 具自动增益控制的读出放大器
US8339839B2 (en) SRAM cell for single sided write