JP4223218B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP4223218B2 JP4223218B2 JP2002038053A JP2002038053A JP4223218B2 JP 4223218 B2 JP4223218 B2 JP 4223218B2 JP 2002038053 A JP2002038053 A JP 2002038053A JP 2002038053 A JP2002038053 A JP 2002038053A JP 4223218 B2 JP4223218 B2 JP 4223218B2
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- Prior art keywords
- film
- anode
- insulating film
- bank
- organic compound
- Prior art date
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Images
Landscapes
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
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| JP2002038053A JP4223218B2 (ja) | 2001-02-19 | 2002-02-15 | 発光装置 |
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| JP2002334790A JP2002334790A (ja) | 2002-11-22 |
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| JP2003332058A (ja) | 2002-03-05 | 2003-11-21 | Sanyo Electric Co Ltd | エレクトロルミネッセンスパネルおよびその製造方法 |
| CN100466285C (zh) | 2002-09-11 | 2009-03-04 | 株式会社半导体能源研究所 | 发光装置及其制造方法 |
| US7452257B2 (en) * | 2002-12-27 | 2008-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a display device |
| JP4265230B2 (ja) * | 2003-01-30 | 2009-05-20 | セイコーエプソン株式会社 | 電気光学表示装置及びその製造方法並びに電子機器 |
| CA2419704A1 (en) * | 2003-02-24 | 2004-08-24 | Ignis Innovation Inc. | Method of manufacturing a pixel with organic light-emitting diode |
| US7314785B2 (en) | 2003-10-24 | 2008-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| JP4785339B2 (ja) * | 2003-10-24 | 2011-10-05 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| JP4704006B2 (ja) * | 2003-10-24 | 2011-06-15 | 株式会社半導体エネルギー研究所 | 表示装置及びその作製方法、並びに電子機器 |
| US7619258B2 (en) * | 2004-03-16 | 2009-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| JP4776949B2 (ja) * | 2004-03-16 | 2011-09-21 | 株式会社半導体エネルギー研究所 | 発光装置 |
| JP4809627B2 (ja) * | 2004-05-21 | 2011-11-09 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
| US7785947B2 (en) * | 2005-04-28 | 2010-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device comprising the step of forming nitride/oxide by high-density plasma |
| EP2544250B1 (en) | 2010-03-01 | 2020-01-08 | Sharp Kabushiki Kaisha | Process for production of nitride semiconductor element, nitride semiconductor light-emitting element, and light-emitting device |
| US9142598B2 (en) | 2011-06-24 | 2015-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting panel, light-emitting device using the light-emitting panel, and method for manufacturing the light-emitting panel |
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| JP2682188B2 (ja) * | 1990-03-09 | 1997-11-26 | 富士電機株式会社 | 電子写真用感光体の製造方法 |
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| JPH04257826A (ja) * | 1991-02-13 | 1992-09-14 | Sharp Corp | アクティブマトリクス基板の製造方法 |
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| JP3067949B2 (ja) * | 1994-06-15 | 2000-07-24 | シャープ株式会社 | 電子装置および液晶表示装置 |
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| JPH08288090A (ja) * | 1995-04-12 | 1996-11-01 | Hitachi Chem Co Ltd | 液晶基板の帯電防止方法 |
| JP3497283B2 (ja) * | 1995-06-19 | 2004-02-16 | 松下電器産業株式会社 | 有機薄膜ｅｌ素子 |
| JPH09199278A (ja) * | 1996-01-18 | 1997-07-31 | Toray Ind Inc | 発光素子 |
| EP1012892A1 (fr) * | 1997-07-31 | 2000-06-28 | Ecole Polytechnique Féderale de Lausanne (EPFL) | Dispositif electroluminescent |
| KR100660383B1 (ko) * | 1998-03-17 | 2006-12-21 | 세이코 엡슨 가부시키가이샤 | 유기이엘장치의 제조방법 |
| JPH11337973A (ja) * | 1998-05-28 | 1999-12-10 | Sharp Corp | アクティブマトリクス基板の製造方法 |
| JP2000077191A (ja) * | 1998-08-31 | 2000-03-14 | Sanyo Electric Co Ltd | 表示装置 |
| JP2000106279A (ja) * | 1998-09-28 | 2000-04-11 | Matsushita Electric Ind Co Ltd | 有機薄膜ｅｌ素子 |
| JP3850005B2 (ja) * | 1999-03-03 | 2006-11-29 | パイオニア株式会社 | スイッチング素子及び有機エレクトロルミネッセンス素子表示装置 |
| JP4423701B2 (ja) * | 1999-06-07 | 2010-03-03 | Ｔｄｋ株式会社 | 有機ｅｌ表示装置 |
| JP4627822B2 (ja) * | 1999-06-23 | 2011-02-09 | 株式会社半導体エネルギー研究所 | 表示装置 |
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