JP4212501B2 - 薄膜の形成方法 - Google Patents
薄膜の形成方法 Download PDFInfo
- Publication number
- JP4212501B2 JP4212501B2 JP2004088753A JP2004088753A JP4212501B2 JP 4212501 B2 JP4212501 B2 JP 4212501B2 JP 2004088753 A JP2004088753 A JP 2004088753A JP 2004088753 A JP2004088753 A JP 2004088753A JP 4212501 B2 JP4212501 B2 JP 4212501B2
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- Japan
- Prior art keywords
- catalyst body
- substrate
- filament
- thin film
- film formation
- Prior art date
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
Description
51 ステンレス基板
52 ポリイミド層
53 裏面電極
54 一導電型非単結晶半導体層
55 実質的に真性な非単結晶半導体層
56 他導電型非単結晶半導体層
57 表面透明電極
58 集電電極
Claims (1)
- 繰り返し形成された線状部分及びコイル状部分を有する触媒体を、前記コイル状部分から基板までの距離が前記線状部分から基板までの距離よりも遠くなり、且つ前記コイル状部分が基板と平行方向になるように反応室内に配置し、
前記触媒体を高温に加熱し、加熱された触媒体に対し原料となるガスを供給し、ガス分子が前記触媒体の表面にて分解されることにより生成される活性種によって前記基板上に薄膜を形成することを特徴とする薄膜の形成方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2004088753A JP4212501B2 (ja) | 2004-03-25 | 2004-03-25 | 薄膜の形成方法 |
Applications Claiming Priority (1)
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JP2004088753A JP4212501B2 (ja) | 2004-03-25 | 2004-03-25 | 薄膜の形成方法 |
Publications (2)
Publication Number | Publication Date |
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JP2005277133A JP2005277133A (ja) | 2005-10-06 |
JP4212501B2 true JP4212501B2 (ja) | 2009-01-21 |
Family
ID=35176453
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004088753A Expired - Fee Related JP4212501B2 (ja) | 2004-03-25 | 2004-03-25 | 薄膜の形成方法 |
Country Status (1)
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JP (1) | JP4212501B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008303078A (ja) * | 2007-06-05 | 2008-12-18 | Japan Atomic Energy Agency | シリコン薄膜または同位体濃縮シリコン薄膜の製造方法 |
WO2013168747A1 (ja) * | 2012-05-09 | 2013-11-14 | 麒麟麦酒株式会社 | 複合発熱体並びにそれを用いた薄膜を備える成形体の製造方法及び発熱体cvd装置 |
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2004
- 2004-03-25 JP JP2004088753A patent/JP4212501B2/ja not_active Expired - Fee Related
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JP2005277133A (ja) | 2005-10-06 |
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