JP4210166B2 - グレートーンマスクの製造方法 - Google Patents

グレートーンマスクの製造方法 Download PDF

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Publication number
JP4210166B2
JP4210166B2 JP2003188242A JP2003188242A JP4210166B2 JP 4210166 B2 JP4210166 B2 JP 4210166B2 JP 2003188242 A JP2003188242 A JP 2003188242A JP 2003188242 A JP2003188242 A JP 2003188242A JP 4210166 B2 JP4210166 B2 JP 4210166B2
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JP
Japan
Prior art keywords
film
semi
light
resist
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2003188242A
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English (en)
Japanese (ja)
Other versions
JP2005024730A (ja
Inventor
和久 井村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to JP2003188242A priority Critical patent/JP4210166B2/ja
Priority to TW093118769A priority patent/TWI247965B/zh
Priority to KR1020040050389A priority patent/KR100733480B1/ko
Priority to CNB2004100625381A priority patent/CN1284044C/zh
Publication of JP2005024730A publication Critical patent/JP2005024730A/ja
Priority to KR1020060126296A priority patent/KR100960746B1/ko
Application granted granted Critical
Publication of JP4210166B2 publication Critical patent/JP4210166B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
JP2003188242A 2003-06-30 2003-06-30 グレートーンマスクの製造方法 Expired - Lifetime JP4210166B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2003188242A JP4210166B2 (ja) 2003-06-30 2003-06-30 グレートーンマスクの製造方法
TW093118769A TWI247965B (en) 2003-06-30 2004-06-28 Method for manufacturing gray tone mask
KR1020040050389A KR100733480B1 (ko) 2003-06-30 2004-06-30 그레이 톤 마스크의 제조 방법
CNB2004100625381A CN1284044C (zh) 2003-06-30 2004-06-30 灰调掩模的制造方法
KR1020060126296A KR100960746B1 (ko) 2003-06-30 2006-12-12 그레이 톤 마스크의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003188242A JP4210166B2 (ja) 2003-06-30 2003-06-30 グレートーンマスクの製造方法

Publications (2)

Publication Number Publication Date
JP2005024730A JP2005024730A (ja) 2005-01-27
JP4210166B2 true JP4210166B2 (ja) 2009-01-14

Family

ID=34186842

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003188242A Expired - Lifetime JP4210166B2 (ja) 2003-06-30 2003-06-30 グレートーンマスクの製造方法

Country Status (4)

Country Link
JP (1) JP4210166B2 (zh)
KR (2) KR100733480B1 (zh)
CN (1) CN1284044C (zh)
TW (1) TWI247965B (zh)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4614696B2 (ja) 2004-06-24 2011-01-19 Ｈｏｙａ株式会社 グレートーンマスクの製造方法
JP4693451B2 (ja) * 2005-03-22 2011-06-01 Ｈｏｙａ株式会社 グレートーンマスクの製造方法及び薄膜トランジスタ基板の製造方法
KR100922800B1 (ko) 2005-05-27 2009-10-21 엘지디스플레이 주식회사 하프톤 마스크와 그 제조방법 및 이를 이용한 표시장치의 제조방법
KR100800301B1 (ko) * 2005-07-05 2008-02-01 주식회사 에스앤에스텍 그레이톤 블랭크마스크 및 포토마스크 제조방법
WO2007010866A1 (ja) * 2005-07-15 2007-01-25 Ulvac Coating Corporation グレートーンマスク用ブランクス、及びそれを用いたグレートーンマスク及びその製造方法
TW200712756A (en) * 2005-07-15 2007-04-01 Ulvac Coating Corp Blanks for gray tone mask, gray tone mask using said blanks, and process for producing said blanks
JP5110821B2 (ja) * 2005-08-12 2012-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4695964B2 (ja) * 2005-11-09 2011-06-08 アルバック成膜株式会社 グレートーンマスク及びその製造方法
TWI269935B (en) 2005-12-30 2007-01-01 Quanta Display Inc Mask and fabrication method thereof and application thereof
CN1808267B (zh) * 2006-02-13 2010-12-01 友达光电股份有限公司 掩膜及其制造方法及其应用
KR100822296B1 (ko) * 2006-04-10 2008-04-15 엘지마이크론 주식회사 다단 구조를 가지는 하프톤 마스크 및 그 제조 방법
KR100802448B1 (ko) * 2006-04-12 2008-02-13 엘지마이크론 주식회사 에칭 스토퍼층을 구비한 하프톤 마스크 및 그 제조 방법
JP2008064903A (ja) * 2006-09-06 2008-03-21 National Institute Of Advanced Industrial & Technology 三次元構造物作製装置、センサー作製装置、及び三次元構造物作製方法
JP5015537B2 (ja) * 2006-09-26 2012-08-29 Ｈｏｙａ株式会社 フォトマスクの製造方法及びパターンの転写方法
US20080182179A1 (en) * 2007-01-25 2008-07-31 Allied Integrated Patterning Corp. Gray tone mask and method for manufacturing the same
JP5429590B2 (ja) * 2007-07-10 2014-02-26 Ｎｌｔテクノロジー株式会社 ハーフトーンマスク
TWI431408B (zh) * 2007-07-23 2014-03-21 Hoya Corp 光罩資訊之取得方法、光罩之品質顯示方法、顯示裝置之製造方法以及光罩製品
JP2009086384A (ja) * 2007-09-29 2009-04-23 Hoya Corp フォトマスク及びフォトマスクの製造方法、並びにパターン転写方法
JP4968011B2 (ja) * 2007-11-19 2012-07-04 セイコーエプソン株式会社 半導体装置
JP2009128558A (ja) 2007-11-22 2009-06-11 Hoya Corp フォトマスク及びフォトマスクの製造方法、並びにパターン転写方法
JP2009258693A (ja) 2008-03-27 2009-11-05 Hoya Corp 多階調フォトマスク及びそれを用いたパターン転写方法
JP2009237419A (ja) * 2008-03-28 2009-10-15 Hoya Corp 多階調フォトマスク及びその製造方法、並びにパターン転写方法
TW201030451A (en) * 2008-09-30 2010-08-16 Hoya Corp Multi-tone photomask and method of manufacturing the same
CN101382732B (zh) * 2008-10-20 2011-09-07 友达光电股份有限公司 制作图案化材料层的方法
JP5274393B2 (ja) * 2009-06-30 2013-08-28 アルバック成膜株式会社 ハーフトーンマスクの製造方法
JP2012008546A (ja) * 2010-05-24 2012-01-12 Hoya Corp 多階調フォトマスクの製造方法、及びパターン転写方法
JP2012008545A (ja) * 2010-05-24 2012-01-12 Hoya Corp 多階調フォトマスクの製造方法、及びパターン転写方法
JP6266919B2 (ja) * 2013-08-19 2018-01-24 Hoya株式会社 転写用マスクの製造方法
US11561470B2 (en) * 2017-03-29 2023-01-24 Toray Industries, Inc. Negative photosensitive resin composition, cured film, element provided with cured film, organic EL display provided with cured film, and method for producing same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100484517B1 (ko) * 2000-12-19 2005-04-20 호야 가부시키가이샤 그레이톤 마스크 및 그 제조 방법

Also Published As

Publication number Publication date
KR20070003741A (ko) 2007-01-05
TW200506506A (en) 2005-02-16
KR20050002661A (ko) 2005-01-10
CN1577084A (zh) 2005-02-09
KR100960746B1 (ko) 2010-06-01
JP2005024730A (ja) 2005-01-27
CN1284044C (zh) 2006-11-08
KR100733480B1 (ko) 2007-06-28
TWI247965B (en) 2006-01-21

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