JP4200550B2 - 露光方法及びリソグラフィシステム - Google Patents

露光方法及びリソグラフィシステム Download PDF

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Publication number
JP4200550B2
JP4200550B2 JP20349798A JP20349798A JP4200550B2 JP 4200550 B2 JP4200550 B2 JP 4200550B2 JP 20349798 A JP20349798 A JP 20349798A JP 20349798 A JP20349798 A JP 20349798A JP 4200550 B2 JP4200550 B2 JP 4200550B2
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JP
Japan
Prior art keywords
exposure
projection
distortion
projection exposure
sensitive substrate
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP20349798A
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English (en)
Japanese (ja)
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JP2000036451A5 (enExample
JP2000036451A (ja
Inventor
正彦 秋月
健二 肥塚
勇樹 石井
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Nikon Corp
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Nikon Corp
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Publication date
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Priority to JP20349798A priority Critical patent/JP4200550B2/ja
Publication of JP2000036451A publication Critical patent/JP2000036451A/ja
Publication of JP2000036451A5 publication Critical patent/JP2000036451A5/ja
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Publication of JP4200550B2 publication Critical patent/JP4200550B2/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70458—Mix-and-match, i.e. multiple exposures of the same area using a similar type of exposure apparatus, e.g. multiple exposures using a UV apparatus

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP20349798A 1998-07-17 1998-07-17 露光方法及びリソグラフィシステム Expired - Fee Related JP4200550B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20349798A JP4200550B2 (ja) 1998-07-17 1998-07-17 露光方法及びリソグラフィシステム

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20349798A JP4200550B2 (ja) 1998-07-17 1998-07-17 露光方法及びリソグラフィシステム

Publications (3)

Publication Number Publication Date
JP2000036451A JP2000036451A (ja) 2000-02-02
JP2000036451A5 JP2000036451A5 (enExample) 2005-10-20
JP4200550B2 true JP4200550B2 (ja) 2008-12-24

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ID=16475144

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Application Number Title Priority Date Filing Date
JP20349798A Expired - Fee Related JP4200550B2 (ja) 1998-07-17 1998-07-17 露光方法及びリソグラフィシステム

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JP (1) JP4200550B2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002222760A (ja) * 2001-01-29 2002-08-09 Canon Inc 露光方法及び露光装置並びにデバイスの製造方法
JP2003084189A (ja) * 2001-09-07 2003-03-19 Canon Inc オートフォーカス検出方法および投影露光装置
US7728953B2 (en) 2004-03-01 2010-06-01 Nikon Corporation Exposure method, exposure system, and substrate processing apparatus
US7126669B2 (en) * 2004-12-27 2006-10-24 Asml Netherlands B.V. Method and system for automated process correction using model parameters, and lithographic apparatus using such method and system
WO2006126569A1 (ja) * 2005-05-25 2006-11-30 Nikon Corporation 露光方法及びリソグラフィシステム
JP4984038B2 (ja) * 2006-07-27 2012-07-25 株式会社ニコン 管理方法
US7352439B2 (en) * 2006-08-02 2008-04-01 Asml Netherlands B.V. Lithography system, control system and device manufacturing method
US7683351B2 (en) * 2006-12-01 2010-03-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8248579B2 (en) 2006-12-01 2012-08-21 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device for correcting overlay errors between overlapping patterns
US8237914B2 (en) 2006-12-01 2012-08-07 Asml Netherlands B.V. Process, apparatus, and device for determining intra-field correction to correct overlay errors between overlapping patterns
JP5554906B2 (ja) * 2008-07-31 2014-07-23 ラピスセミコンダクタ株式会社 露光装置のアライメント方法
JP2014026041A (ja) * 2012-07-25 2014-02-06 Ulvac Japan Ltd 露光装置及び露光方法
JP5945211B2 (ja) * 2012-10-26 2016-07-05 株式会社アルバック 露光装置
JP6198805B2 (ja) * 2015-02-16 2017-09-20 キヤノン株式会社 リソグラフィ装置、リソグラフィ方法、プログラム、リソグラフィシステムおよび物品製造方法
US9927725B2 (en) 2015-02-16 2018-03-27 Canon Kabushiki Kaisha Lithography apparatus, lithography method, program, lithography system, and article manufacturing method

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Publication number Publication date
JP2000036451A (ja) 2000-02-02

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