JP4193905B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4193905B2 JP4193905B2 JP2007073141A JP2007073141A JP4193905B2 JP 4193905 B2 JP4193905 B2 JP 4193905B2 JP 2007073141 A JP2007073141 A JP 2007073141A JP 2007073141 A JP2007073141 A JP 2007073141A JP 4193905 B2 JP4193905 B2 JP 4193905B2
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- semiconductor device
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- light emitting
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Classifications
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Description
この種の半導体装置では、小型化に伴い、半導体素子を樹脂材料で封止する際の樹脂ずれを防止するために、樹脂ずれ確認用のマーク等が利用されている(例えば、特許文献1)。
れた電極と、該電極に接続された半導体素子と、前記半導体素子を被覆する封止部材とを備えた半導体装置を製造する方法であって、
前記基板上におけるx軸方向およびy軸方向に複数の半導体素子を載置する第一の工程
と、
前記x軸方向にマークを形成する第二の工程と、
前記マークに基づいて、複数の半導体素子に対してx軸方向に封止材料を供給して複数
の半導体素子を連続して被覆する第三の工程と、
前記封止部材および前記基板をy軸方向にダイシングすることにより、前記封止部材お
よび前記基板の切断面を面一に形成して、それらの切断面を互いに対向するように一対形
成する第四の工程と、
を有することを特徴とする。
この半導体装置の製造方法においては、前記マークに基づいて、前記基板を前記x軸方
向にダイシングする工程を有することが好ましい。
また、前記マークは、x軸方向に複数列形成され、前記半導体素子および前記封止部材
は、一対のマークの列間に配置されていてもよい。
さらに、前記第二の工程の後に、前記第一の工程がなされることが好ましい。
また、前記マークは、前記x軸方向に延長する延伸部を一部に含むか、前記x軸方向お
よび前記y軸方向それぞれに延長する延伸部を一部に含む多角形であってもよい。
さらに、半導体素子搭載面上において、前記導体配線の正電極及び負電極が前記x軸方
向に並置された基板を形成する工程と、
前記半導体素子の電極と、前記基板の電極とを導電性ワイヤにて接続するワイヤボンデ
ィング工程とを有し、そのワイヤボンディング工程において、前記x軸方向と前記導電性
ワイヤの延長方向とを略一致させることが好ましい。
また、本明細書は特許請求の範囲に示される部材を、実施の形態の部材に特定するものではない。実施の形態に記載されている構成部品の寸法、材質、形状、その相対的配置等は、特に特定的な記載がない限りは、本発明の範囲をそれのみに限定する趣旨ではなく、単なる説明例にすぎない。なお、各図面が示す部材の大きさや位置関係等は、説明を明確にするため誇張していることがある。さらに以下の説明において、同一の名称、符号については同一もしくは同質の部材を示しており、詳細な説明を適宜省略する。さらに、本発明の半導体装置を構成する各要素は、複数の要素を同一の部材で構成して一の部材で複数の要素を兼用する態様としてもよいし、逆に一の部材の機能を複数の部材で分担して実現することもできる。
(1)導体配線が施された基板の主面上における、x軸方向(以下、「x方向」と呼ぶことがある。)または、そのx軸方向に垂直なY軸方向(以下、「y方向」と呼ぶことがある。)のうち、少なくともx軸方向にマークを形成する工程と、
(2)基板の主面上における、少なくともx軸方向に複数の半導体素子を配列させる工程と、
(3)x軸方向のマークに沿って、そのマークの少なくとも一部を封止材料から露出させながら、上記X軸方向に配列された複数の半導体素子を含む基板上に封止材料を連続して供給する工程と、
(4)複数の半導体素子の上に連続して配置された封止材料を硬化させることにより、上記半導体素子を被覆する封止部材を形成する工程と、
(5)y軸方向に、上記半導体素子のうち少なくとも一つを挟むように、複数のダイシングラインを設け、上記封止部材の表面から上記基板の裏面まで連続してダイシングすることにより、上記封止部材および上記基板の切断面を略面一に形成する工程と、
(6)上記切断面を、向かい合う一対の側面とする半導体装置について、上記マークの位置と上記封止部材の下端部の位置とを比較して、封止部材の所定位置からのずれを判定する工程。
本形態の半導体装置の製造方法は、基板と、基板上に形成された正及び負電極と、正及び負電極に接続された発光素子と、発光素子を被覆する封止部材とを含み、互いに対向する1組の側面において、封止部材と基板との端面が略面一の半導体装置を製造する方法である。まず、発光素子を載置するための基板について説明する。
基板は、この種の発光装置を製造するために一般に用いられる基板であれば特に限定されないが、通常、絶縁性の基板の表面に正及び負電極が形成されたものが用いられる。
また、本発明の製造方法においては、基板に対して、xy方向に複数の発光素子を搭載する工程を含む。
このマークは、例えば、ライン方向にそった印刷等(以下「ライン印刷」と記すことがある)の公知の方法によって又は公知の方法に準じて、x方向に所定の間隔で形成することが好ましい。また、基板上に発光素子をxy方向に搭載する場合には、x方向のライン印刷を、y方向に複数平行に形成することが好ましい。マークに用いる材料は特に限定されず、例えば、当該分野で通常用いられるインク、上述した電極材料、タングステン等の高融点金属等のペースト等によって形成することができる。
このマークは、基板の形成と同時、基板に電極を形成する前、基板に発光素子を搭載する前又は後等、後述する封止樹脂のライン印刷工程の前のいずれの段階に形成してもよい。
また、本発明の製造方法においては、基板上のマークに基づいて、複数の発光素子に対してx方向にライン印刷法により封止部材を被覆する。
なお、封止部材は、発光素子、正及び負電極、ワイヤ全体を被覆するような形状に形成することが好ましい。
ダイシングは、ダイシングブレード等を用いて、公知の方法により行うことができる。
さらに、本発明の製造方法においては、基板をy方向にダイシングする。このダイシングは、x方向のダイシングと同様に行うことができる。
なお、これらのダイシングは、いずれを先に行ってもよい。また、マーク同士の間隔を利用して、適切な位置でダイシングを行うこともできる。
実施の形態1
この実施の形態1で形成される発光装置は、図1に示したように、上面が平坦な略直方体形状の絶縁性の基板1上に、負電極2、正電極3が所定の間隔をあけて形成されている。また、負電極2と正電極3との間には、発光素子4を載置するための載置領域が配置され、x方向に、負電極2、載置領域5及び正電極3がこの順に配置されている。負電極2と正電極3とは、絶縁性の基板1の裏面に形成された実装用電極(図示せず)とスルーホール(図示せず)を介して接続されている。正負一対の電極を半導体面側に備えた発光素子4は、載置領域5上に実装されており、発光素子4の負電極が絶縁性の基板1上の負電極2と、発光素子4の正電極が絶縁性の基板1上の正電極3と、各々ワイヤ6によって接続されている。ワイヤ6は、いずれも、略x方向に延長するように接続されている。
また、封止部材7は、その一対の側面において、基板1の端面とほぼ面一に裁断されている。
さらに、基板1のマーク8の外側には、ダイシングずれ確認用マーク9a、9bが形成されている。なお、これらのうち、いずれか一方を、極性判別マークとして利用することもできる。このマーク9a、9bの形状は特に限定されることなく、例えば、発光装置10のy方向の端部近傍において、任意の数、任意の形状で形成することができる。
また、負電極2及び正電極3は、これら負電極2及び正電極3から、スルーホール又は基板の内部配線を経由して、裏面に形成された各電極まで電気的に接続されている。
通常、複数の発光装置を一括して製造できるように、封止部材を形成するまでは、複数の発光装置が集合したパッケージアッセンブリを用いる。
このパッケージアッセンブリにおいては、図2に示すように、大面積の絶縁性の基板1上に、各発光素子4の載置領域5がxy方向に、マトリックス状に配置されている。また、各発光素子8の載置領域を両側から挟むように、x方向に、各々の発光素子4に対応する負電極2及び正電極3が形成されている。絶縁性の基板1は、例えば、総厚さが0.1mm〜0.2mmのセラミックの積層体からなり、各層において厚さ方向に貫通する複数のスルーホール(図示せず)が連結するように形成されている。負電極2及び正電極3は、このスルーホールを介して、絶縁性の基板1の裏面に形成された実装用電極とつながっている。また、載置領域5も同様に裏面でその一部を露出している。
この際、封止部材7は、発光素子4、負電極2及び正電極3、ワイヤ6のすべてを完全に被覆するように形成することが好ましい。
続いて、基板1を、x方向とy方向との2方向からダイシングし、所定幅及び所定長さの発光装置を切り出すことによって、発光装置が完成する。
さらに、ワイヤボンディングのワイヤ6がx方向に延長しており、ライン印刷法をx方向に行うことにより、スキージによるワイヤへの負担を極力低減することができ、ワイヤ6の短絡等を防止して、信頼性の高い発光装置を歩留まりよく、製造することができる。
この実施の形態2では、マークを、図3に示したように、対角線上の2つの角の近傍に形成するとともに、その形状を、x方向の長さが100μm、y方向の長さが100μmの四角形とした以外は、実質的に実施の形態1と同様である。
2 負電極
3 正電極
4 発光素子
5 載置領域
6 ワイヤ
7 封止部材
8、18 マーク
9a、9b ダイシングずれ確認用マーク
10 発光装置
Claims (7)
- 導体配線が施された基板と、その基板に配置された半導体素子と、その半導体素子の電極と前記導体配線の電極とを接続する導電性ワイヤと、前記半導体素子を被覆する封止部材と、を備えた半導体装置を製造する方法であって、
前記基板上におけるx軸方向および該x軸方向に直交するy軸方向に複数の半導体素子を配置する第一の工程と、
前記x軸方向に延長し、互いに分離した複数のマークを形成する第二の工程と、 前記マークに沿って、そのマークの少なくとも一部を封止材料から露出させながら、x軸方向に連ねて供給する封止材料により複数の半導体素子を連続して被覆した後、その封止材料を硬化させることにより封止部材を形成する第三の工程と、
前記封止部材および前記基板をy軸方向にダイシングすることにより、前記封止部材および前記基板の切断面を面一に形成して、それらの切断面を互いに対向するように一対形成する第四の工程と、を有することを特徴とする半導体装置の製造方法。 - x方向に隣り合った半導体素子間に位置する2つのマーク間をダイシング位置として、前記基板を前記y軸方向にダイシングする工程を有する請求項1に記載の半導体装置の製造方法。
- 前記マークは、x軸方向に複数列形成され、前記半導体素子および前記封止部材は、一対のマークの列間に配置される請求項1または2に記載の半導体装置の製造方法。
- 前記第二の工程の後に、前記第一の工程がなされる請求項1から3のいずれか1つに記載の半導体装置の製造方法。
- 前記マークは、前記x軸方向に延長する延伸部を一部に含む請求項1から4のいずれか1つに記載の半導体装置の製造方法。
- 前記マークは、前記x軸方向および前記y軸方向それぞれに延長する延伸部を一部に含む多角形である請求項1から5のいずれか1つに記載の半導体装置の製造方法。
- さらに、半導体素子搭載面上において、前記導体配線の正電極及び負電極が前記x軸方向に並置された基板を形成する工程と、
前記半導体素子の電極と、前記基板の電極とを導電性ワイヤにて接続するワイヤボンディング工程において、前記x軸方向と前記導電性ワイヤの延長方向とを略一致させる請求項1から6のいずれか1つに記載の半導体装置の製造方法。
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JP5223726B2 (ja) * | 2009-02-27 | 2013-06-26 | 日亜化学工業株式会社 | 発光装置 |
US8316593B2 (en) * | 2009-03-18 | 2012-11-27 | Garland Industries, Inc. | Solar roofing system |
KR101537795B1 (ko) * | 2009-03-31 | 2015-07-22 | 서울반도체 주식회사 | Led 패키지 제조 방법 및 그 led 패키지 |
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KR20130100724A (ko) * | 2012-03-02 | 2013-09-11 | 닛토덴코 가부시키가이샤 | 발광 장치 집합체 및 조명 장치 |
JP2014022501A (ja) * | 2012-07-17 | 2014-02-03 | Nitto Denko Corp | 発光装置集合体および照明装置 |
JP5941787B2 (ja) * | 2012-08-09 | 2016-06-29 | 日立オートモティブシステムズ株式会社 | パワーモジュールおよびパワーモジュールの製造方法 |
JP6679306B2 (ja) * | 2015-12-28 | 2020-04-15 | シャープ株式会社 | 発光素子の製造方法 |
JP6500885B2 (ja) * | 2016-12-20 | 2019-04-17 | 日亜化学工業株式会社 | 発光装置の製造方法 |
CN108346720A (zh) * | 2018-01-23 | 2018-07-31 | 浙江东晶博蓝特光电有限公司 | 一种用于发光器件封装的制备方法 |
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JPH07211843A (ja) | 1994-01-17 | 1995-08-11 | Fujitsu Ltd | 半導体装置及びその製造方法 |
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JP3751464B2 (ja) | 1999-03-24 | 2006-03-01 | ローム株式会社 | チップ型発光装置 |
JP2000353825A (ja) | 1999-06-09 | 2000-12-19 | Sony Corp | Ledモジュール実装用基台の製造方法 |
JP2001223285A (ja) | 2000-02-09 | 2001-08-17 | Rohm Co Ltd | チップ型半導体装置及びその製造方法 |
JP2004363171A (ja) | 2003-06-02 | 2004-12-24 | Seiko Epson Corp | 配線基板及びその製造方法、チップモジュール、電気光学装置及びその製造方法、並びに電子機器 |
JP5123466B2 (ja) | 2005-02-18 | 2013-01-23 | 日亜化学工業株式会社 | 発光装置 |
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