JP4192482B2 - シリコンウェーハの製造方法 - Google Patents

シリコンウェーハの製造方法 Download PDF

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Publication number
JP4192482B2
JP4192482B2 JP2002080868A JP2002080868A JP4192482B2 JP 4192482 B2 JP4192482 B2 JP 4192482B2 JP 2002080868 A JP2002080868 A JP 2002080868A JP 2002080868 A JP2002080868 A JP 2002080868A JP 4192482 B2 JP4192482 B2 JP 4192482B2
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JP
Japan
Prior art keywords
wafer
engineering
etching
polishing
back surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002080868A
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English (en)
Japanese (ja)
Other versions
JP2003282491A5 (enExample
JP2003282491A (ja
Inventor
栄 古屋田
和成 高石
徹 谷口
一夫 藤巻
明弘 工藤
雅史 則本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Priority to JP2002080868A priority Critical patent/JP4192482B2/ja
Publication of JP2003282491A publication Critical patent/JP2003282491A/ja
Priority to US10/957,030 priority patent/US7226864B2/en
Priority to US10/957,026 priority patent/US7456106B2/en
Publication of JP2003282491A5 publication Critical patent/JP2003282491A5/ja
Application granted granted Critical
Publication of JP4192482B2 publication Critical patent/JP4192482B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/10—Etching in solutions or melts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2002080868A 2002-03-22 2002-03-22 シリコンウェーハの製造方法 Expired - Fee Related JP4192482B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002080868A JP4192482B2 (ja) 2002-03-22 2002-03-22 シリコンウェーハの製造方法
US10/957,030 US7226864B2 (en) 2002-03-22 2004-10-01 Method for producing a silicon wafer
US10/957,026 US7456106B2 (en) 2002-03-22 2004-10-01 Method for producing a silicon wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002080868A JP4192482B2 (ja) 2002-03-22 2002-03-22 シリコンウェーハの製造方法

Publications (3)

Publication Number Publication Date
JP2003282491A JP2003282491A (ja) 2003-10-03
JP2003282491A5 JP2003282491A5 (enExample) 2005-10-20
JP4192482B2 true JP4192482B2 (ja) 2008-12-10

Family

ID=29229722

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002080868A Expired - Fee Related JP4192482B2 (ja) 2002-03-22 2002-03-22 シリコンウェーハの製造方法

Country Status (2)

Country Link
US (2) US7456106B2 (enExample)
JP (1) JP4192482B2 (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4192482B2 (ja) * 2002-03-22 2008-12-10 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法
JP4273943B2 (ja) * 2003-12-01 2009-06-03 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法
JP2005175106A (ja) * 2003-12-10 2005-06-30 Sumitomo Mitsubishi Silicon Corp シリコンウェーハの加工方法
JP4442446B2 (ja) * 2005-01-27 2010-03-31 信越半導体株式会社 選択エッチング方法
JP4517867B2 (ja) * 2005-01-31 2010-08-04 株式会社Sumco シリコンウェーハ表面形状制御用エッチング液及び該エッチング液を用いたシリコンウェーハの製造方法
JP2008166805A (ja) * 2006-12-29 2008-07-17 Siltron Inc 高平坦度シリコンウェハーの製造方法
US8128830B2 (en) * 2009-09-17 2012-03-06 Hitachi Global Storage Technologies Netherlands, B.V. Labeling an imprint lithography template
US8377825B2 (en) * 2009-10-30 2013-02-19 Corning Incorporated Semiconductor wafer re-use using chemical mechanical polishing
US8562849B2 (en) * 2009-11-30 2013-10-22 Corning Incorporated Methods and apparatus for edge chamfering of semiconductor wafers using chemical mechanical polishing
DE112011100688T5 (de) * 2010-02-26 2013-02-28 Sumco Corporation Verfahren zum Herstellen eines Halbleiterwafers
US8696405B2 (en) 2010-03-12 2014-04-15 Wayne O. Duescher Pivot-balanced floating platen lapping machine
US8740668B2 (en) 2010-03-12 2014-06-03 Wayne O. Duescher Three-point spindle-supported floating abrasive platen
US8758088B2 (en) 2011-10-06 2014-06-24 Wayne O. Duescher Floating abrading platen configuration
US8602842B2 (en) 2010-03-12 2013-12-10 Wayne O. Duescher Three-point fixed-spindle floating-platen abrasive system
US8647171B2 (en) 2010-03-12 2014-02-11 Wayne O. Duescher Fixed-spindle floating-platen workpiece loader apparatus
US8647170B2 (en) 2011-10-06 2014-02-11 Wayne O. Duescher Laser alignment apparatus for rotary spindles
US8641476B2 (en) 2011-10-06 2014-02-04 Wayne O. Duescher Coplanar alignment apparatus for rotary spindles
US8647172B2 (en) 2010-03-12 2014-02-11 Wayne O. Duescher Wafer pads for fixed-spindle floating-platen lapping
US8500515B2 (en) 2010-03-12 2013-08-06 Wayne O. Duescher Fixed-spindle and floating-platen abrasive system using spherical mounts
US8337280B2 (en) 2010-09-14 2012-12-25 Duescher Wayne O High speed platen abrading wire-driven rotary workholder
US8430717B2 (en) 2010-10-12 2013-04-30 Wayne O. Duescher Dynamic action abrasive lapping workholder
JP6091193B2 (ja) * 2011-12-27 2017-03-08 芝浦メカトロニクス株式会社 基板の処理装置及び処理方法
CN102832224B (zh) * 2012-09-10 2015-04-15 豪威科技(上海)有限公司 晶圆减薄方法
US9199354B2 (en) 2012-10-29 2015-12-01 Wayne O. Duescher Flexible diaphragm post-type floating and rigid abrading workholder
US9604339B2 (en) 2012-10-29 2017-03-28 Wayne O. Duescher Vacuum-grooved membrane wafer polishing workholder
US9233452B2 (en) 2012-10-29 2016-01-12 Wayne O. Duescher Vacuum-grooved membrane abrasive polishing wafer workholder
US8998678B2 (en) 2012-10-29 2015-04-07 Wayne O. Duescher Spider arm driven flexible chamber abrading workholder
US9011207B2 (en) 2012-10-29 2015-04-21 Wayne O. Duescher Flexible diaphragm combination floating and rigid abrading workholder
US9039488B2 (en) 2012-10-29 2015-05-26 Wayne O. Duescher Pin driven flexible chamber abrading workholder
US8998677B2 (en) 2012-10-29 2015-04-07 Wayne O. Duescher Bellows driven floatation-type abrading workholder
US8845394B2 (en) 2012-10-29 2014-09-30 Wayne O. Duescher Bellows driven air floatation abrading workholder
US9893116B2 (en) * 2014-09-16 2018-02-13 Toshiba Memory Corporation Manufacturing method of electronic device and manufacturing method of semiconductor device
US10926378B2 (en) 2017-07-08 2021-02-23 Wayne O. Duescher Abrasive coated disk islands using magnetic font sheet
US20200009701A1 (en) * 2018-07-09 2020-01-09 Arizona Board Of Regents On Behalf Of The University Of Arizona Polishing protocol for zirconium diboride based ceramics to be implemented into optical systems
CN110561200A (zh) * 2019-08-02 2019-12-13 菲特晶(南京)电子有限公司 一种石英晶片加工工艺
US11691241B1 (en) * 2019-08-05 2023-07-04 Keltech Engineering, Inc. Abrasive lapping head with floating and rigid workpiece carrier
CN115714082A (zh) * 2022-10-31 2023-02-24 浙江丽水中欣晶圆半导体科技有限公司 提高硅片平坦度降低硅材料消耗的工艺

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4885056A (en) * 1988-09-02 1989-12-05 Motorola Inc. Method of reducing defects on semiconductor wafers
JPH09270400A (ja) * 1996-01-31 1997-10-14 Shin Etsu Handotai Co Ltd 半導体ウェーハの製造方法
JP3620554B2 (ja) * 1996-03-25 2005-02-16 信越半導体株式会社 半導体ウェーハ製造方法
JP4066202B2 (ja) * 1996-10-04 2008-03-26 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体ウェハの製造方法
JPH10135164A (ja) * 1996-10-29 1998-05-22 Komatsu Electron Metals Co Ltd 半導体ウェハの製造方法
JP3358549B2 (ja) * 1998-07-08 2002-12-24 信越半導体株式会社 半導体ウエーハの製造方法ならびにウエーハチャック
JP3329288B2 (ja) * 1998-11-26 2002-09-30 信越半導体株式会社 半導体ウエーハおよびその製造方法
WO2001006564A1 (fr) * 1999-07-15 2001-01-25 Shin-Etsu Handotai Co., Ltd. Procede de production d'une plaquette encollee et plaquette encollee
US7332437B2 (en) * 2000-06-29 2008-02-19 Shin-Etsu Handotai Co., Ltd. Method for processing semiconductor wafer and semiconductor wafer
KR100832942B1 (ko) * 2000-10-26 2008-05-27 신에츠 한도타이 가부시키가이샤 웨이퍼의 제조방법 및 연마장치 및 웨이퍼
JP4192482B2 (ja) * 2002-03-22 2008-12-10 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法

Also Published As

Publication number Publication date
US20050148181A1 (en) 2005-07-07
US7226864B2 (en) 2007-06-05
JP2003282491A (ja) 2003-10-03
US7456106B2 (en) 2008-11-25
US20050112893A1 (en) 2005-05-26

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