JP4168443B2 - 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの製造方法 - Google Patents

感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの製造方法 Download PDF

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Publication number
JP4168443B2
JP4168443B2 JP2003282830A JP2003282830A JP4168443B2 JP 4168443 B2 JP4168443 B2 JP 4168443B2 JP 2003282830 A JP2003282830 A JP 2003282830A JP 2003282830 A JP2003282830 A JP 2003282830A JP 4168443 B2 JP4168443 B2 JP 4168443B2
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weight
radiation
resin composition
sensitive resin
microlens
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Japanese (ja)
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JP2005049691A (ja
Inventor
秀樹 西村
貴樹 蓑輪
英司 高本
公康 佐野
通則 西川
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JSR Corp
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JSR Corp
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Priority to JP2003282830A priority Critical patent/JP4168443B2/ja
Priority to TW093122766A priority patent/TW200504463A/zh
Priority to KR1020040059735A priority patent/KR100776121B1/ko
Publication of JP2005049691A publication Critical patent/JP2005049691A/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Epoxy Resins (AREA)
JP2003282830A 2003-07-30 2003-07-30 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの製造方法 Expired - Lifetime JP4168443B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003282830A JP4168443B2 (ja) 2003-07-30 2003-07-30 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの製造方法
TW093122766A TW200504463A (en) 2003-07-30 2004-07-29 Radiation-sensitive resin composition, interlayer insulating film and microlens and manufacturing method thereof
KR1020040059735A KR100776121B1 (ko) 2003-07-30 2004-07-29 감방사선성 수지 조성물, 층간 절연막 및 마이크로렌즈,및 이들의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003282830A JP4168443B2 (ja) 2003-07-30 2003-07-30 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの製造方法

Publications (2)

Publication Number Publication Date
JP2005049691A JP2005049691A (ja) 2005-02-24
JP4168443B2 true JP4168443B2 (ja) 2008-10-22

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JP2003282830A Expired - Lifetime JP4168443B2 (ja) 2003-07-30 2003-07-30 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの製造方法

Country Status (3)

Country Link
JP (1) JP4168443B2 (ko)
KR (1) KR100776121B1 (ko)
TW (1) TW200504463A (ko)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2420890A1 (en) 2010-08-20 2012-02-22 Fujifilm Corporation Positive photosensitive resin composition, method for forming cured film, cured film, organic el display device and liquid crystal display device
EP2447773A1 (en) 2010-11-02 2012-05-02 Fujifilm Corporation Photosensitive resin composition, method for producing pattern, MEMS structure, method for producing the structure, method for dry etching, method for wet etching, MEMS shutter device, and image display apparatus
EP2498133A2 (en) 2011-03-11 2012-09-12 Fujifilm Corporation Resin pattern, method for producing the pattern, method for producing MEMS structure, method for manufacturing semiconductor device, and method for producing plated pattern
WO2015064602A1 (ja) 2013-10-31 2015-05-07 富士フイルム株式会社 積層体、有機半導体製造用キットおよび有機半導体製造用レジスト組成物
WO2016124493A1 (en) 2015-02-02 2016-08-11 Basf Se Latent acids and their use

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101206780B1 (ko) * 2005-03-03 2012-11-30 주식회사 동진쎄미켐 감광성 수지 조성물
JP4713262B2 (ja) * 2005-07-22 2011-06-29 昭和電工株式会社 感光性の樹脂組成物
JP5003081B2 (ja) * 2005-09-28 2012-08-15 東レ株式会社 感光性シロキサン組成物、それから形成された硬化膜、および硬化膜を有する素子
JP5764863B2 (ja) * 2005-10-28 2015-08-19 東レ株式会社 固体撮像素子
WO2007119947A1 (en) * 2006-04-13 2007-10-25 Kolon Industries, Inc Method of manufacturing metal electrode
KR100908694B1 (ko) * 2006-08-07 2009-07-22 도쿄 오카 고교 가부시키가이샤 층간절연막용 감광성 수지조성물 및 층간절연막의 형성방법
JP4905700B2 (ja) 2007-05-16 2012-03-28 Ｊｓｒ株式会社 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズならびにそれらの形成方法
WO2009028360A1 (ja) * 2007-08-24 2009-03-05 Toray Industries, Inc. 感光性組成物、それから形成された硬化膜、および硬化膜を有する素子
EP2239301B1 (en) 2008-01-28 2016-04-27 Toray Industries, Inc. Siloxane resin compositions
JP5240459B2 (ja) * 2008-02-19 2013-07-17 Ｊｓｒ株式会社 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズならびにそれらの形成方法
JP5437027B2 (ja) * 2009-03-31 2014-03-12 東京応化工業株式会社 感光性樹脂組成物及び液晶パネル
KR101193185B1 (ko) 2009-12-29 2012-10-19 삼성디스플레이 주식회사 패턴 형성 방법 및 유기 발광 소자의 제조방법
WO2013118680A1 (ja) * 2012-02-07 2013-08-15 日立化成株式会社 感光性樹脂組成物、パターン硬化膜の製造方法及び電子部品
TWI494339B (zh) 2012-10-23 2015-08-01 Ind Tech Res Inst 部分酯化環氧樹脂及應用其製成之環氧樹脂組成物及其製法
JP6218393B2 (ja) * 2013-02-28 2017-10-25 東京応化工業株式会社 層間絶縁膜用感光性樹脂組成物
JP6284671B2 (ja) * 2017-05-02 2018-02-28 東京応化工業株式会社 層間絶縁膜用感光性樹脂組成物

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2933145B2 (ja) * 1991-05-23 1999-08-09 日本化薬株式会社 カラ−フイルタ−保護膜用紫外線硬化性樹脂組成物及びその硬化物
JPH075301A (ja) * 1993-06-15 1995-01-10 Tosoh Corp マイクロレンズ形成用感光性組成物
JP3965868B2 (ja) 2000-06-12 2007-08-29 Ｊｓｒ株式会社 層間絶縁膜およびマイクロレンズ

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2420890A1 (en) 2010-08-20 2012-02-22 Fujifilm Corporation Positive photosensitive resin composition, method for forming cured film, cured film, organic el display device and liquid crystal display device
EP2447773A1 (en) 2010-11-02 2012-05-02 Fujifilm Corporation Photosensitive resin composition, method for producing pattern, MEMS structure, method for producing the structure, method for dry etching, method for wet etching, MEMS shutter device, and image display apparatus
EP2498133A2 (en) 2011-03-11 2012-09-12 Fujifilm Corporation Resin pattern, method for producing the pattern, method for producing MEMS structure, method for manufacturing semiconductor device, and method for producing plated pattern
WO2015064602A1 (ja) 2013-10-31 2015-05-07 富士フイルム株式会社 積層体、有機半導体製造用キットおよび有機半導体製造用レジスト組成物
WO2016124493A1 (en) 2015-02-02 2016-08-11 Basf Se Latent acids and their use
US9994538B2 (en) 2015-02-02 2018-06-12 Basf Se Latent acids and their use

Also Published As

Publication number Publication date
TW200504463A (en) 2005-02-01
TWI318329B (ko) 2009-12-11
KR20050014716A (ko) 2005-02-07
JP2005049691A (ja) 2005-02-24
KR100776121B1 (ko) 2007-11-16

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