JP4157857B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4157857B2
JP4157857B2 JP2004165303A JP2004165303A JP4157857B2 JP 4157857 B2 JP4157857 B2 JP 4157857B2 JP 2004165303 A JP2004165303 A JP 2004165303A JP 2004165303 A JP2004165303 A JP 2004165303A JP 4157857 B2 JP4157857 B2 JP 4157857B2
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Japan
Prior art keywords
layer
substrate
sapphire substrate
semiconductor
pyrolysis
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Expired - Fee Related
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JP2004165303A
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Japanese (ja)
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JP2005033186A (ja
JP2005033186A5 (enExample
Inventor
裕 廣瀬
毅 田中
大助 上田
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP2004165303A priority Critical patent/JP4157857B2/ja
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JP2004165303A 2003-06-16 2004-06-03 半導体装置の製造方法 Expired - Fee Related JP4157857B2 (ja)

Priority Applications (1)

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JP2004165303A JP4157857B2 (ja) 2003-06-16 2004-06-03 半導体装置の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003170301 2003-06-16
JP2004165303A JP4157857B2 (ja) 2003-06-16 2004-06-03 半導体装置の製造方法

Publications (3)

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JP2005033186A JP2005033186A (ja) 2005-02-03
JP2005033186A5 JP2005033186A5 (enExample) 2005-08-18
JP4157857B2 true JP4157857B2 (ja) 2008-10-01

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JP2004165303A Expired - Fee Related JP4157857B2 (ja) 2003-06-16 2004-06-03 半導体装置の製造方法

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007332012A (ja) * 2006-06-19 2007-12-27 Hitachi Cable Ltd 半導体ウェハの製造方法

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JP2005033186A (ja) 2005-02-03

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