JP4152574B2 - 薄膜の成膜方法および半導体装置の製造方法 - Google Patents

薄膜の成膜方法および半導体装置の製造方法 Download PDF

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Publication number
JP4152574B2
JP4152574B2 JP2000290558A JP2000290558A JP4152574B2 JP 4152574 B2 JP4152574 B2 JP 4152574B2 JP 2000290558 A JP2000290558 A JP 2000290558A JP 2000290558 A JP2000290558 A JP 2000290558A JP 4152574 B2 JP4152574 B2 JP 4152574B2
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Prior art keywords
film
substrate
thin film
forming
flexible substrate
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Expired - Fee Related
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JP2000290558A
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English (en)
Japanese (ja)
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JP2002100790A5 (enExample
JP2002100790A (ja
Inventor
英昭 二宮
久雄 師岡
義人 山本
和夫 西
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Semiconductor Energy Laboratory Co Ltd
TDK Corp
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Semiconductor Energy Laboratory Co Ltd
TDK Corp
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Priority to JP2000290558A priority Critical patent/JP4152574B2/ja
Priority to US09/931,717 priority patent/US6815259B2/en
Publication of JP2002100790A publication Critical patent/JP2002100790A/ja
Publication of JP2002100790A5 publication Critical patent/JP2002100790A5/ja
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    • H10P72/74—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1698—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Photovoltaic Devices (AREA)
JP2000290558A 2000-09-25 2000-09-25 薄膜の成膜方法および半導体装置の製造方法 Expired - Fee Related JP4152574B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000290558A JP4152574B2 (ja) 2000-09-25 2000-09-25 薄膜の成膜方法および半導体装置の製造方法
US09/931,717 US6815259B2 (en) 2000-09-25 2001-08-20 Method of supporting a flexible substrate and method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000290558A JP4152574B2 (ja) 2000-09-25 2000-09-25 薄膜の成膜方法および半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2002100790A JP2002100790A (ja) 2002-04-05
JP2002100790A5 JP2002100790A5 (enExample) 2005-07-14
JP4152574B2 true JP4152574B2 (ja) 2008-09-17

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JP2000290558A Expired - Fee Related JP4152574B2 (ja) 2000-09-25 2000-09-25 薄膜の成膜方法および半導体装置の製造方法

Country Status (2)

Country Link
US (1) US6815259B2 (enExample)
JP (1) JP4152574B2 (enExample)

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* Cited by examiner, † Cited by third party
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JP3645511B2 (ja) * 2001-10-09 2005-05-11 株式会社ルネサステクノロジ 半導体装置の製造方法
JP3892703B2 (ja) * 2001-10-19 2007-03-14 富士通株式会社 半導体基板用治具及びこれを用いた半導体装置の製造方法
JP4104902B2 (ja) * 2002-05-21 2008-06-18 シャープ株式会社 基板処理装置
US7327022B2 (en) * 2002-12-30 2008-02-05 General Electric Company Assembly, contact and coupling interconnection for optoelectronics
US7130020B2 (en) * 2003-04-30 2006-10-31 Whitney Theodore R Roll printer with decomposed raster scan and X-Y distortion correction
JP2006049800A (ja) * 2004-03-10 2006-02-16 Seiko Epson Corp 薄膜デバイスの供給体、薄膜デバイスの供給体の製造方法、転写方法、半導体装置の製造方法及び電子機器
JP4737942B2 (ja) * 2004-03-24 2011-08-03 Ｔｄｋ株式会社 太陽電池の製造方法
JP4862333B2 (ja) * 2004-09-30 2012-01-25 リコープリンティングシステムズ株式会社 薄膜形成装置および薄膜形成方法
KR101141533B1 (ko) * 2005-06-25 2012-05-04 엘지디스플레이 주식회사 기판 반송방법 및 이를 이용한 플렉서블 디스플레이의제조방법
JP5408848B2 (ja) 2007-07-11 2014-02-05 株式会社ジャパンディスプレイ 半導体装置の製造方法
US7785517B2 (en) * 2007-08-24 2010-08-31 Nexolve Corporation Methods for reducing or eliminating defects in polymer workpieces
WO2009139389A1 (ja) * 2008-05-15 2009-11-19 株式会社アルバック 薄膜太陽電池モジュールの製造方法及び薄膜太陽電池モジュール
US8704083B2 (en) * 2010-02-11 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and fabrication method thereof
JP2012061506A (ja) * 2010-09-17 2012-03-29 Fuji Electric Co Ltd レーザパターニング装置及びレーザパターニング方法
CN102064137A (zh) * 2010-12-06 2011-05-18 日月光半导体制造股份有限公司 具有金属边框的半导体结构
JP6182120B2 (ja) * 2014-08-28 2017-08-16 富士フイルム株式会社 透明導電膜、透明導電膜の製造方法およびタッチパネル
KR102385327B1 (ko) 2015-04-06 2022-04-12 삼성디스플레이 주식회사 플렉서블 표시 장치 및 이의 제조 방법
KR102354135B1 (ko) * 2017-10-12 2022-01-24 현대자동차주식회사 근접센서
CN110719703B (zh) * 2019-10-22 2020-12-08 嘉兴华竹电子有限公司 一种线路板阻焊印刷机
CN111211063B (zh) * 2020-01-13 2023-04-25 安徽工业大学 一种用于测试柔性太阳能电池光电特性的实验装置
CN116638858A (zh) * 2023-04-24 2023-08-25 隆基绿能科技股份有限公司 一种转印基板及激光转印装置

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US4231847A (en) 1978-06-21 1980-11-04 Trw Inc. Electrodeposition of nickel-iron alloys having a low temperature coefficient and articles made therefrom
DE3280455T3 (de) 1981-11-04 2000-07-13 Kanegafuchi Kagaku Kogyo K.K., Osaka Biegsame photovoltaische Vorrichtung.
JPH01198638A (ja) * 1987-08-21 1989-08-10 Ube Ind Ltd ポリイミドフィルムの製造法
JP3262232B2 (ja) * 1990-09-25 2002-03-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2705452B2 (ja) 1992-05-13 1998-01-28 東レ株式会社 ハウス用フィルム被覆枠体の製造方法
WO2004074210A1 (ja) * 1992-07-03 2004-09-02 Masanori Hirano セラミックス－金属複合体およびその製造方法
US5331183A (en) 1992-08-17 1994-07-19 The Regents Of The University Of California Conjugated polymer - acceptor heterojunctions; diodes, photodiodes, and photovoltaic cells
US5538902A (en) 1993-06-29 1996-07-23 Sanyo Electric Co., Ltd. Method of fabricating a photovoltaic device having a three-dimensional shape
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JPH07256918A (ja) * 1994-03-28 1995-10-09 Brother Ind Ltd 記録装置
JP3239657B2 (ja) 1994-12-28 2001-12-17 富士電機株式会社 薄膜太陽電池およびその製造方法
JP3096234B2 (ja) * 1995-10-30 2000-10-10 日東電工株式会社 プローブ構造の製造方法
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JP3467191B2 (ja) * 1998-08-19 2003-11-17 信越化学工業株式会社 ペリクル製造用治具およびこれを用いたペリクルの製造方法

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US6815259B2 (en) 2004-11-09
JP2002100790A (ja) 2002-04-05
US20020037605A1 (en) 2002-03-28

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