JP4150491B2 - ポジ型感光性組成物 - Google Patents

ポジ型感光性組成物 Download PDF

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Publication number
JP4150491B2
JP4150491B2 JP2000212946A JP2000212946A JP4150491B2 JP 4150491 B2 JP4150491 B2 JP 4150491B2 JP 2000212946 A JP2000212946 A JP 2000212946A JP 2000212946 A JP2000212946 A JP 2000212946A JP 4150491 B2 JP4150491 B2 JP 4150491B2
Authority
JP
Japan
Prior art keywords
group
acid
photosensitive composition
positive photosensitive
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000212946A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002023353A (ja
JP2002023353A5 (zh
Inventor
邦彦 児玉
利明 青合
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2000212946A priority Critical patent/JP4150491B2/ja
Priority to TW090114950A priority patent/TWI288858B/zh
Priority to KR1020010041877A priority patent/KR100787887B1/ko
Publication of JP2002023353A publication Critical patent/JP2002023353A/ja
Publication of JP2002023353A5 publication Critical patent/JP2002023353A5/ja
Application granted granted Critical
Publication of JP4150491B2 publication Critical patent/JP4150491B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2000212946A 2000-07-13 2000-07-13 ポジ型感光性組成物 Expired - Fee Related JP4150491B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000212946A JP4150491B2 (ja) 2000-07-13 2000-07-13 ポジ型感光性組成物
TW090114950A TWI288858B (en) 2000-07-13 2001-06-20 Positive photosensitive composition
KR1020010041877A KR100787887B1 (ko) 2000-07-13 2001-07-12 포지티브 감광성 조성물

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000212946A JP4150491B2 (ja) 2000-07-13 2000-07-13 ポジ型感光性組成物

Publications (3)

Publication Number Publication Date
JP2002023353A JP2002023353A (ja) 2002-01-23
JP2002023353A5 JP2002023353A5 (zh) 2006-01-12
JP4150491B2 true JP4150491B2 (ja) 2008-09-17

Family

ID=18708780

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000212946A Expired - Fee Related JP4150491B2 (ja) 2000-07-13 2000-07-13 ポジ型感光性組成物

Country Status (3)

Country Link
JP (1) JP4150491B2 (zh)
KR (1) KR100787887B1 (zh)
TW (1) TWI288858B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7521168B2 (en) * 2002-02-13 2009-04-21 Fujifilm Corporation Resist composition for electron beam, EUV or X-ray
JP4639062B2 (ja) 2003-11-21 2011-02-23 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
JP4300131B2 (ja) * 2004-02-16 2009-07-22 富士フイルム株式会社 液浸プロセス用化学増幅型レジスト組成物及びそれを用いたパターン形成方法
JP7406983B2 (ja) * 2019-12-26 2023-12-28 住友化学株式会社 組成物および表示装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69027799T2 (de) * 1989-03-14 1997-01-23 Ibm Chemisch amplifizierter Photolack
JP3342124B2 (ja) * 1992-09-14 2002-11-05 和光純薬工業株式会社 微細パターン形成材料及びパターン形成方法
JPH07140666A (ja) * 1993-06-04 1995-06-02 Internatl Business Mach Corp <Ibm> マイクロリトグラフィックレジスト組成物、酸不安定化合物、マイクロリトグラフィックレリーフ画像形成方法及び酸感知性ポリマー組成物
ATE199985T1 (de) * 1996-02-09 2001-04-15 Wako Pure Chem Ind Ltd Polymer und resistmaterial
US6037107A (en) * 1997-08-28 2000-03-14 Shipley Company, L.L.C. Photoresist compositions
US6037097A (en) * 1998-01-27 2000-03-14 International Business Machines Corporation E-beam application to mask making using new improved KRS resist system
JP3989087B2 (ja) * 1998-05-25 2007-10-10 住友ベークライト株式会社 フォトレジスト用被膜形成材料、フォトレジスト組成物及びパターン形成方法
JP2000047387A (ja) * 1998-07-28 2000-02-18 Fuji Photo Film Co Ltd 遠紫外線露光用ポジ型フォトレジスト組成物
US7704668B1 (en) * 1998-08-04 2010-04-27 Rohm And Haas Electronic Materials Llc Photoresist compositions and methods and articles of manufacture comprising same
KR100281902B1 (ko) * 1998-08-18 2001-03-02 윤종용 백본이 환상 구조를 가지는 감광성 폴리머 및 이를 포함하는 레지스트 조성물
JP3876571B2 (ja) * 1998-08-26 2007-01-31 住友化学株式会社 化学増幅型ポジ型レジスト組成物
US6569971B2 (en) * 1998-08-27 2003-05-27 Hyundai Electronics Industries Co., Ltd. Polymers for photoresist and photoresist compositions using the same
JP3640290B2 (ja) * 1998-10-02 2005-04-20 東京応化工業株式会社 ポジ型ホトレジスト塗布液及びそれを用いた表示素子用基材
JP4007570B2 (ja) * 1998-10-16 2007-11-14 富士フイルム株式会社 ポジ型レジスト組成物
JP4410326B2 (ja) * 1998-10-29 2010-02-03 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法

Also Published As

Publication number Publication date
JP2002023353A (ja) 2002-01-23
KR100787887B1 (ko) 2007-12-27
KR20020006602A (ko) 2002-01-23
TWI288858B (en) 2007-10-21

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