JP4143131B2 - カソードスパッタリング装置および方法 - Google Patents

カソードスパッタリング装置および方法 Download PDF

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Publication number
JP4143131B2
JP4143131B2 JP52839398A JP52839398A JP4143131B2 JP 4143131 B2 JP4143131 B2 JP 4143131B2 JP 52839398 A JP52839398 A JP 52839398A JP 52839398 A JP52839398 A JP 52839398A JP 4143131 B2 JP4143131 B2 JP 4143131B2
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JP
Japan
Prior art keywords
target
magnetic field
yoke plate
substrate
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP52839398A
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English (en)
Japanese (ja)
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JP2001507078A5 (enExample
JP2001507078A (ja
Inventor
ジッヒマン，エゴ
ミュッケ，ミヒャエル
ベッカー，ヴォルフガング
トルッケンミュラー，クラウス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Singulus Technologies AG
Original Assignee
Singulus Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE1996154000 external-priority patent/DE19654000C1/de
Priority claimed from DE1996154007 external-priority patent/DE19654007A1/de
Priority claimed from DE1996153999 external-priority patent/DE19653999C1/de
Application filed by Singulus Technologies AG filed Critical Singulus Technologies AG
Publication of JP2001507078A publication Critical patent/JP2001507078A/ja
Publication of JP2001507078A5 publication Critical patent/JP2001507078A5/ja
Application granted granted Critical
Publication of JP4143131B2 publication Critical patent/JP4143131B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3458—Electromagnets in particular for cathodic sputtering apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP52839398A 1996-12-21 1997-12-22 カソードスパッタリング装置および方法 Expired - Fee Related JP4143131B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
DE1996154000 DE19654000C1 (de) 1996-12-21 1996-12-21 Vorrichtung zur Kathodenzerstäubung
DE1996154007 DE19654007A1 (de) 1996-12-21 1996-12-21 Vorrichtung zur Kathodenzerstäubung
DE19654007.0 1996-12-21
DE1996153999 DE19653999C1 (de) 1996-12-21 1996-12-21 Vorrichtung zur Kathodenzerstäubung
DE19653999.4 1996-12-21
DE19654000.3 1996-12-21
PCT/EP1997/007225 WO1998028777A1 (de) 1996-12-21 1997-12-22 Vorrichtung und verfahren zur kathodenzerstäubung

Publications (3)

Publication Number Publication Date
JP2001507078A JP2001507078A (ja) 2001-05-29
JP2001507078A5 JP2001507078A5 (enExample) 2005-07-14
JP4143131B2 true JP4143131B2 (ja) 2008-09-03

Family

ID=27216979

Family Applications (2)

Application Number Title Priority Date Filing Date
JP52839598A Expired - Fee Related JP4422801B2 (ja) 1996-12-21 1997-12-22 カソードスパッタリング装置
JP52839398A Expired - Fee Related JP4143131B2 (ja) 1996-12-21 1997-12-22 カソードスパッタリング装置および方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP52839598A Expired - Fee Related JP4422801B2 (ja) 1996-12-21 1997-12-22 カソードスパッタリング装置

Country Status (5)

Country Link
US (2) US6338781B1 (enExample)
EP (2) EP0946965B1 (enExample)
JP (2) JP4422801B2 (enExample)
DE (2) DE59712307D1 (enExample)
WO (3) WO1998028777A1 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100421087B1 (ko) * 2001-12-31 2004-03-04 주식회사 엠피시스템 주차차량 자동 이송장치 및 방법
JP4470429B2 (ja) * 2002-09-30 2010-06-02 日本ビクター株式会社 マグネトロンスパッタリング装置
US7297247B2 (en) * 2003-05-06 2007-11-20 Applied Materials, Inc. Electroformed sputtering target
US7910218B2 (en) 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
US7670436B2 (en) 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US7762114B2 (en) * 2005-09-09 2010-07-27 Applied Materials, Inc. Flow-formed chamber component having a textured surface
US9127362B2 (en) * 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US20070125646A1 (en) * 2005-11-25 2007-06-07 Applied Materials, Inc. Sputtering target for titanium sputtering chamber
US20070283884A1 (en) * 2006-05-30 2007-12-13 Applied Materials, Inc. Ring assembly for substrate processing chamber
US7981262B2 (en) * 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US8968536B2 (en) * 2007-06-18 2015-03-03 Applied Materials, Inc. Sputtering target having increased life and sputtering uniformity
US20090084317A1 (en) * 2007-09-28 2009-04-02 Applied Materials, Inc. Atomic layer deposition chamber and components
US7901552B2 (en) * 2007-10-05 2011-03-08 Applied Materials, Inc. Sputtering target with grooves and intersecting channels
US20090314631A1 (en) * 2008-06-18 2009-12-24 Angstrom Sciences, Inc. Magnetron With Electromagnets And Permanent Magnets
CN101447274B (zh) * 2008-09-26 2011-05-11 东莞宏威数码机械有限公司 磁路机构和具有该机构的磁控溅射阴极及制造方法
ES2374775B1 (es) * 2009-04-03 2013-01-03 Universidad De Castilla La Mancha Unidad de pulverización catódica de blancos circulares.
DE102010020737A1 (de) * 2010-05-17 2011-11-17 Oerlikon Trading Ag, Trübbach Target für Funkenverdampfung mit räumlicher Begrenzung der Ausbreitung des Funkens
US8445862B2 (en) * 2010-12-14 2013-05-21 Hermes Microvision, Inc. Apparatus of plural charged particle beams with multi-axis magnetic lens
US8294095B2 (en) * 2010-12-14 2012-10-23 Hermes Microvision, Inc. Apparatus of plural charged particle beams with multi-axis magnetic lens
US9051638B2 (en) * 2013-03-01 2015-06-09 Poole Ventura, Inc. In-situ sputtering apparatus
WO2014143078A1 (en) * 2013-03-15 2014-09-18 Poole Ventura, Inc. In-situ sputtering apparatus
TWI527924B (zh) * 2014-02-12 2016-04-01 兆陽真空動力股份有限公司 電磁控濺鍍陰極
CN106702336B (zh) * 2015-11-16 2019-02-19 北京北方华创微电子装备有限公司 磁控管的安装机构及磁控溅射设备
WO2018175689A1 (en) * 2017-03-22 2018-09-27 Applied Plasma Equipment Magnetron sputtering source for insulating target materials
DE112019000682B4 (de) 2018-02-06 2023-06-29 Canon Anelva Corporation Substratbearbeitungsvorrichtung und Substratbearbeitungsverfahren

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3956093A (en) * 1974-12-16 1976-05-11 Airco, Inc. Planar magnetron sputtering method and apparatus
US4336119A (en) * 1981-01-29 1982-06-22 Ppg Industries, Inc. Method of and apparatus for control of reactive sputtering deposition
JPS60166774A (ja) * 1984-02-09 1985-08-30 Matsushita Electric Ind Co Ltd 空気調和機
JPS61231168A (ja) * 1985-04-03 1986-10-15 Sharp Corp スパツタリング用タ−ゲツト
US4971674A (en) * 1986-08-06 1990-11-20 Ube Industries, Ltd. Magnetron sputtering method and apparatus
JPS63317664A (ja) * 1987-06-19 1988-12-26 Asahi Chem Ind Co Ltd スパツタリングカソ−ド
US4865708A (en) * 1988-11-14 1989-09-12 Vac-Tec Systems, Inc. Magnetron sputtering cathode
EP0440377B1 (en) * 1990-01-29 1998-03-18 Varian Associates, Inc. Collimated deposition apparatus and method
US5182001A (en) 1990-06-13 1993-01-26 Leybold Aktiengesellschaft Process for coating substrates by means of a magnetron cathode
DE4100291C1 (enExample) * 1991-01-08 1991-10-02 Leybold Ag, 6450 Hanau, De
US5262030A (en) 1992-01-15 1993-11-16 Alum Rock Technology Magnetron sputtering cathode with electrically variable source size and location for coating multiple substrates
DE9217937U1 (de) 1992-01-29 1993-04-01 Leybold AG, 6450 Hanau Vorrichtung zur Kathodenzerstäubung
US5744011A (en) * 1993-03-18 1998-04-28 Kabushiki Kaisha Toshiba Sputtering apparatus and sputtering method
DE4315023C2 (de) 1993-05-06 1997-05-28 Leybold Ag Vorrichtung zur Kathodenzerstäubung
DE4329155A1 (de) 1993-08-30 1995-03-02 Bloesch W Ag Magnetfeldkathode
US5415754A (en) * 1993-10-22 1995-05-16 Sierra Applied Sciences, Inc. Method and apparatus for sputtering magnetic target materials
DE19623359A1 (de) * 1995-08-17 1997-02-20 Leybold Ag Vorrichtung zum Beschichten eines Substrats
US5772861A (en) * 1995-10-16 1998-06-30 Viratec Thin Films, Inc. System for evaluating thin film coatings
US5863399A (en) * 1996-04-13 1999-01-26 Singulus Technologies Gmbh Device for cathode sputtering
DE19654000C1 (de) * 1996-12-21 1997-10-30 Singulus Technologies Gmbh Vorrichtung zur Kathodenzerstäubung
US5876576A (en) * 1997-10-27 1999-03-02 Applied Materials, Inc. Apparatus for sputtering magnetic target materials

Also Published As

Publication number Publication date
US6344114B1 (en) 2002-02-05
EP0946965A1 (de) 1999-10-06
WO1998028777A1 (de) 1998-07-02
WO1998028779A1 (de) 1998-07-02
EP0946965B1 (de) 2006-05-17
JP4422801B2 (ja) 2010-02-24
EP0946966A1 (de) 1999-10-06
US6338781B1 (en) 2002-01-15
WO1998028778A1 (de) 1998-07-02
JP2001507079A (ja) 2001-05-29
DE59712307D1 (de) 2005-06-16
EP0946966B1 (de) 2005-05-11
DE59712656D1 (de) 2006-06-22
JP2001507078A (ja) 2001-05-29

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