EP0946965B1 - Vorrichtung und verfahren zur kathodenzerstäubung - Google Patents

Vorrichtung und verfahren zur kathodenzerstäubung Download PDF

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Publication number
EP0946965B1
EP0946965B1 EP97953900A EP97953900A EP0946965B1 EP 0946965 B1 EP0946965 B1 EP 0946965B1 EP 97953900 A EP97953900 A EP 97953900A EP 97953900 A EP97953900 A EP 97953900A EP 0946965 B1 EP0946965 B1 EP 0946965B1
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EP
European Patent Office
Prior art keywords
target
magnetic field
coils
coating
coil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP97953900A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP0946965A1 (de
Inventor
Eggo Sichmann
Michael MÜCKE
Wolfgang Becker
Klaus TRUCKENMÜLLER
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Singulus Technologies AG
Original Assignee
Singulus Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE1996154000 external-priority patent/DE19654000C1/de
Priority claimed from DE1996154007 external-priority patent/DE19654007A1/de
Priority claimed from DE1996153999 external-priority patent/DE19653999C1/de
Application filed by Singulus Technologies AG filed Critical Singulus Technologies AG
Publication of EP0946965A1 publication Critical patent/EP0946965A1/de
Application granted granted Critical
Publication of EP0946965B1 publication Critical patent/EP0946965B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3458—Electromagnets in particular for cathodic sputtering apparatus

Definitions

  • the invention relates to a device and method for magnetron sputtering for the production of layers on a substrate by means of a sputtering in a vacuum chamber sputtering cathode, preferably with respect to the center axis of the sputtering cathode shoes, a target and at least one concentric or annular having arranged magnets.
  • the magnet which is arranged in a ring shape, generates a counter-magnetic field which influences the course of the magnetic field lines. This gives the course of the magnetic field lines an approximately parallel or lenticular or convex course.
  • a magnetron sputtering cathode having a variable magnetic field during coating is known.
  • the magnetic field determines the area of the target from which material is removed.
  • an arrangement of a plurality of magnets is provided behind the sputtering cathode, which are selectively turned on or off to generate a magnetic field parallel to the target surface or not.
  • superposition leads to a movement of the magnetic field radially outwards or over certain areas of the target. Since previously predetermined magnetic fields are switched on or off, the magnetic field in the region of the target surface is changed discontinuously.
  • US-A-3 956 093 relates to a method and apparatus for magnetron sputtering having a sputtering cathode, pole pieces, a target and a magnetic field in the area of the target surface arranged in a vacuum chamber, which is generated by superposing a static with a variable magnetic field.
  • the variable magnetic field is generated by coils arranged in a plane with the target.
  • US-A-5 182 001 discloses a process for coating substrates by magnetron sputtering.
  • the method provides a variable magnetic field in the area of the target surface by superposition of a static magnetic field with a variable magnetic field generated by a coil.
  • the static magnetic field generating permanent magnets have poles which are provided on the one hand outside the outer edge of the target and on the other hand within the inner edge of the target.
  • a magnetic coil for generating the variable magnetic field is provided, which extends in a vertical direction beyond the surface of the target.
  • the invention has for its object to provide an improved device and an improved method for sputtering, the target yield is improved and at the same time a high uniformity in the layer thickness is achieved.
  • the cathode, the target, the yoke and the magnet arrangement can be used e.g. an annular, rectangular, elliptical, or other shape when the substrate is e.g. circular, rectangular, elliptical or otherwise shaped.
  • At least one further part which generates a continuously variable magnetic field is provided in the region of the target. Due to the advantageous arrangement of the magnet next to the variable magnetic field generating part is obtained even with different sized substrate, a uniform layer thickness, the deviations of the layer thickness can be between ⁇ 2% to 3%.
  • the sputtering trench forms depending on the set Magnetic field. In this arrangement of the magnet in conjunction with the variable magnetic field generating part of the main magnetic field is formed so that over the entire process time a targeted influence on the erosion pit can be ensured.
  • annularly arranged magnet in conjunction with the variable magnetic field generating part or at least one coil, a continuous change of the magnetic field, in particular in the region of the target surface is achieved.
  • the magnetic flux lines run from the center to the outside or from the outside to the inside and take a lens shape, so that you can achieve the broadest possible erosion trench. If, after a relatively long process time, a concave erosion trench is obtained, then it is advantageous for the magnetic field lines to be approximately parallel with respect to the target surface.
  • a shield plate prevents entry of the magnetic field lines in the yoke.
  • these coils can also be controlled time-dependent, so that one hand, the lifetime of a target and on the other hand over a cycle time, the magnetic field can vary.
  • the thus empirically determined control curve for example for a gold target, can then be used again and again for the coating process.
  • the control process for the coating process can also be monitored by means of a program.
  • Essential to the invention is that the use of magnetic coils, the magnetic field in the target space is influenced and varied specifically, so that the plasma radially from the inside can move to the outside. This achieves that the erosion trench can be radially shifted or changed over the target, with the possibility of creating a very wide erosion trench by continuously varying the magnetic field, or two erosion trenches side by side, by stepping the magnetic field in stages and switches.
  • At least one annularly arranged magnet is provided in the region of the yoke plate or in the region of the outer circumference of the yoke plate.
  • the second magnetic coil is provided in the region of the outer periphery of the target.
  • the two magnetic coils are provided slightly above the upper limit or the back of the target.
  • the two magnetic coils are arranged on the same transverse plane.
  • the two magnetic coils are arranged on the same transverse plane between a first or second yoke plate and the back of the target.
  • annularly arranged magnet between the lower and first yoke plate and the upper and second yoke plate is provided.
  • the two magnetic coils and the annularly arranged magnet are arranged concentrically to the central axis of the sputtering cathode.
  • the annularly arranged magnet has an outer diameter which is approximately equal to, smaller or larger than the outer diameter of the first coil.
  • the second annularly arranged coil has a smaller outer diameter than the first coil.
  • the arrangement according to the invention ensures that the ring-shaped magnet has an N / S polarity pointing in the direction of the substrate.
  • a shielding part is provided between the two coils.
  • An additional possibility according to a development of the drive device according to the invention is that the shielding part is provided between one of the yoke plates and the target.
  • the shielding part is provided between one of the yoke plates and / or an insulator and the target.
  • the distance between the two yoke plates corresponds approximately to the height of the annularly arranged magnet.
  • the two yoke plates have different sized outer diameter or are arranged in the form of a step.
  • sensors are provided which determine the layer thickness on the substrate, the shape of the target surface and / or the magnetic field.
  • the current applied to the coils is variable as a function of the time and / or of the sensor signals.
  • the current applied to the coil current or the power supply to the coil via a control curve or via a predetermined program is controllable and the power lines for this purpose are connected via a power divider with a computer in operative connection.
  • the sputtering energy can be adjusted location-dependent and time-dependent on the target, and so a high uniformity of the layer and the target utilization can be achieved.
  • the coating can be monitored and controlled during the process.
  • the sputtering cathode designated 2 can be inserted into a chamber wall 1 of the cathode sputtering apparatus.
  • the cathode consists of a disc-shaped, ferromagnetic, first lower yoke 21 '(I) and a spaced apart, the second and upper yoke 21 (II).
  • the first yoke 21 ' has a diameter which is larger than the diameter of the second yoke 21.
  • the two yokes 21, 21 ' are arranged in the form of a staircase rotationally symmetrical to a longitudinal central axis 44 of the sputtering cathode 2 and each have a sufficiently large distance, so that in this space an annularly arranged magnet 9 also rotationally symmetrical to the longitudinal central axis 44 can be arranged.
  • This annularly arranged magnet 9 has an N / S polarity with respect to a target 8.
  • the yokes 21, 21 ', the magnet 9 and the pole piece 14 on the yoke 21' can be rotated about the longitudinal central axis 44 by means of a drive device 89.
  • the smaller in the outer diameter or inner yoke plate 21 is connected to a cold finger 74 and the larger diameter in the outer yoke plate 21 'with a pole piece 14 directly or indirectly.
  • variable magnetic field generating part or one or more magnetic coils 76, 77 are provided.
  • the two magnetic coils 76, 77 shown in FIG. 1 lie on a same transverse plane below the lower, horizontally extending plane of the yoke plate 21 '. In the region of the outer circumference 55 of the target 8, the first magnetic coil 76 and in the region of the inner circumference 54 of the target 8 or in the region of the cold finger or cooling head 74, the second magnetic coil 77 may be provided. The two magnetic coils 76, 77 are provided slightly above an upper boundary 57 or the rear side 40 of the target 8.
  • annularly arranged magnet 9 between the upper and second yoke plate 21 and the lower or first yoke plate 21' is provided and the two Magnet coils 76, 77 and the annularly arranged magnet 9 are arranged concentrically to the central axis 44 of the sputtering cathode 2.
  • the sputtering cathode 2 also has a cooling plate 7. Between the yoke 21 'and the cooling plate 7, an insulator 6 is clamped and secured by means of bolts 91.
  • the target 8 to be atomized is arranged and fastened by means of screws 5 in this.
  • On the back of the cooling plate 7 are one or two annular grooves 86 for receiving an inner and an outer magnetic coil 76, 77, which are arranged concentrically to the central axis 44 of the target 8.
  • the yoke or the insulator 6 and the cooling plate 7 are secured by screws 91 and the cold finger 74.
  • the screw 91 and a screw 73 is isolated in an advantageous manner by the insulator 6 against the yoke.
  • a power supply which serves to generate the magnetic field.
  • the magnet 9 is coupled to the yoke 21 and / or 21 'and the pole piece 14 for guiding the magnetic flux and thus forms the complete Magnetfeldeinschluß.
  • the lower end of the pole piece 14 forms a flange 88, to which the outer mask or an anode 4 is connected.
  • the height of the pole piece 14 and / or the height of the anode 4 is variable.
  • the substrate 27 At the lower end of the anode 4 is the substrate 27, which includes the target space 84 together with the anode 4 and the target surface 41.
  • a bore 67 which extends through the entire device and serves to receive a hollow screw 20 and the cooling finger 74.
  • the cooling finger 74 may be connected to a cooling line, not shown in the drawing.
  • the second yoke 21 At the upper end of the hollow screw 20 connects in the axial direction without contact, the second yoke 21 with a yoke plate.
  • the second yoke 21 (II) is fixed by means of a flange 22, while, the first yoke 21 '(I) is connected to the pole piece 14 and can be secured by means of screws 73, 73' ,
  • a central mask or a central anode 26 is detachably connected at the end face or at the lower end of a threaded portion 90 of the cooling finger 74.
  • the central anode 26 extends to into the central depression of the target 8, which is provided on the front side of the target, and forms with its lower end with the outer anode 4 or outer mask an annular surface for the masking of the substrate 27.
  • the distance between the ring-shaped magnet 9 and the central axis 44 is variable depending on the embodiment. In any case, the annular magnet 9 is located between the central axis 44 and the pole piece 14. As shown in Fig. 1, a shielding member 75 may be provided between the two coils 75, 77. Further, it is possible that the shielding member 75 is provided between one of the yoke plates 21, 21 'and the target 8.
  • the shielding member 75 is an iron core for the coils 76, 77 and amplifies their magnetic field, and at the same time it shields the target space 84 against short-circuit field lines of the magnet 9, so that one can make a field change with relatively small currents by means of the coils.
  • the shielding part 75 may be provided between one of the yoke plates 21, 21 'and / or the insulator 6 and the target 8.
  • the magnet 9 serves to generate the magnetron magnetic field.
  • the field lines 71 of the cathode or of the sputtering magnetron have a convex course over the target surface 41 as field lines 42 and a flattened or approximately parallel course to the target rear side 40 as field lines 42 '.
  • shielding part 75 This is also effected in an advantageous manner by the shielding part 75.
  • a non-ferromagnetic metal target e.g. a gold or aluminum target.
  • the ring-shaped magnet 9 can be made up of numerous individual magnets arranged in a ring. As is apparent from Fig. 1, the outer, annularly arranged magnet has a greater distance to the Tarruckückseite 40 than the two magnetic coils 76 and 77th
  • At least one further magnet may be provided in the vicinity of the magnet 9 in addition to the first ring-shaped magnet 9 to increase the absolute field strength.
  • the magnetic coils 76, 77 shown in FIG. 3 serve to vary the main magnetic field and can be polarized as desired.
  • the current I applied to the coils 76, 77 is variable as a function of time.
  • the current I applied to the coils 76, 77 or the current supply to the coils can be controlled via a control curve or via a predetermined program in a computer 82, and the power lines 78, 79 are connected via a current divider 80 to a computer 82 in active connection.
  • the required control curve can be determined empirically.
  • a respective target e.g. a gold or Al target
  • an optimal for the power supply control curve are determined.
  • the layer thickness on the substrate, the shape of the target surface and / or the magnetic fields can be monitored by sensors and the power supply to the coils 76, 77 can be controlled accordingly.
  • the yoke is not formed in one piece, but was divided and consists of two separate parts, ie an upper and a lower yoke plate 21, 21 ', which consist of two rotationally symmetric discs and spaced from each other can, so that at least one magnet 9 can be provided between them.
  • FIGS. 4 and 5 show further embodiments of the sputtering apparatus for the production of layers on a substrate 27, in which the spools 76, 77 or the yoke plates 21, 21 'and the pole piece 14 are also designed differently than in FIG can be arranged.
  • the yoke plates 21, 21 ' are also step-like, wherein the upper yoke plate of FIG. 4 with its inner edge to the hollow screw 20 and the outer edge via the annular magnet 9 arranged on the inner edge of the lower, stepwise offset , first yoke plate 21 'is connected.
  • the outer edge of the first yoke plate 21 ' is connected to the pole piece 14.
  • the first coil 76 which is larger in diameter than the second coil 77, is located above the lower yoke plate 21 'between the outer edge of the upper yoke plate 21 and the outer edge of the lower yoke plate 21', while the second smaller diameter coil 77 is located below the upper yoke plate 21 between the inner edge of the lower yoke plate 21 'and the hollow screw 20.
  • the remaining arrangement of this device corresponds to the arrangement of the device according to FIG. 1.
  • the coils 76, 77 are further away from the target 8 than the coils of the examples according to Figures 1, 5 and 6.
  • the coils of FIG. 4 must therefore be made larger and be charged with more current than the.
  • the yoke plates 21, 21 ' are also divided, and these are also formed as annular yoke plates 21, 21' with different large diameter, both yoke plates are arranged on a horizontal plane with respect to the footprint of the device, which intersects the central axis 44 at a right angle.
  • the annular magnet 9 lies between the two yoke plates 21, 21 '.
  • the two coils 76, 77 arranged in a ring surround the shielding part 75 and are located in the target space 84 according to FIG. 5.
  • the yoke 21, 21 ' is radially divided with respect to the center line 44.
  • the magnet 9 can be arranged so that the magnetic flux can be selectively distributed to the hollow screw 20 and the pole piece 14. In this way, one can obtain a homogeneous, horizontal magnetic field in the target space 84th This magnetic field is then also influenced by the coils 76, 77, as already explained. As is apparent from Fig. 5, the radius R 9 between the center line 44 and the magnet 9 is variable or adjustable so that an optimal magnetic field 42 can adjust.
  • the embodiment according to FIG. 6 differs from the exemplary embodiment according to FIG. 5 in that a second shielding part 75 'with two annular coils 76', 77 'in the same arrangement as in FIG. 5 is located outside of the target space 84 .
  • the additional shield plate 75 in the target space 84 or outside the target space 84 with the two coils 76, 77 and 76 ', 77' serves to influence the magnetic field specifically and even more optimally. As a result, the lens shape of the flux lines (see magnetic field 42) is influenced.
  • the inclusion of the electrons which serve to ionize the useful gas atoms in the atomization chamber, for example the argon atoms, is effected on the target 8.
  • the magnetic field stops the electrons above the target 8, which thus can not flow to the anode. This allows the electrons to participate in the ionization several times. This additionally ensures that a uniform layer thickness is achieved on the surface of the substrate 27.
  • the current is varied depending on the target surface.
  • the plasma can be displaced radially above the target surface 41. That is, the plasma is shifted either left or right with respect to the surface of the target 8.
  • the surface layer of the substrate 27 can be selectively sputtered or built up.
  • a stepped configuration of the yoke plates 21, 21 ' allows a very simple, inexpensive construction of the cathode as a whole and also the use of a simple, annularly arranged magnet, which is e.g. can be designed as a cuboid magnet and not as a ring magnet and can be set in a simple manner between the yoke plates 21, 21 '. Ring magnets are more expensive and therefore more expensive than block magnets.
  • the individual coils can be influenced to varying degrees and, depending on the exemplary embodiment, can be coupled or not coupled.
  • the coils 76, 77 according to FIGS. 1 and 3 to 6 may be e.g. be connected in series.
  • the magnetic field in the target space can be influenced and varied in a targeted manner, so that the plasma is radial can move from the inside out.
  • the layer thickness uniformity can thus be achieved by adding (superposing) a time-varying magnetic field in the region of the cathode (target).
  • This variable magnetic field serves to optimize the layer thickness over a coating cycle. For this purpose, an empirically determined current-time function for the control of the magnetic coils is created.
  • the coils 76, 77 provided in the target interior space 84 according to FIGS. 5 and 6 serve primarily to influence the magnetic field in the target space.
  • the additional coils 76 ', 77' and the shield plate 75 ' are provided as shown in FIG.
  • the invention also provides a method for adjusting the layer thickness uniformity, improved target utilization and conditioning of the target surface.
  • the method is based on a location-dependent sputtering energy which can be adjusted on the target so that layer thickness inhomogeneities common in the prior art can be avoided at the edge of the substrate.
  • FIG. 7 shows an arrangement in which an inner plasma ring 93 'and an outer plasma ring 93 "are arranged, for example, by suitable control of the magnet coils 76 and 77 located on the target rear side on the target 8 at two specific positions. have a specific sputtering energy E 'or E " Different rates of deposition of the layer 92 on the substrate 27, whose layer plots are shown in phantom, produce a uniform thickness of the layer 92 in the overlay.
  • the substrate or target may rotate about the central axis 44.
  • the plasma can be arranged at two or more stationary positions above the target (ie, on the side facing the substrate 27).
  • the sputtering power can be regulated depending on the position of the plasma by adjusting the cathode current and cathode voltage.
  • a concentric plasma ring concentric with the center axis 44 can also be guided over the target 8 by changing its radius.
  • FIG. 8 The arrangement according to FIG. 7 is explained in more detail in FIG. 8.
  • the excitation currents of an inner and an outer magnetic coil eg, coils 76 and 77 of Fig. 1
  • the sputtering powers on an inner and outer position of the target and in the lower Graph the resulting sputtering energies on the inner and outer positions of the target.
  • the inner coil is excited during the time t i with the electric current I in, and an inner plasma ring is generated.
  • the sputtering power P is set to the inside of the inner target position by the voltage between cathode and anode, which leads to the time of the sputtering energy E t i to an increase in the inside.
  • the inner coil is deactivated and the outer magnet coil during the time t a energized and generates an outer plasma ring.
  • the sputtering power P is adjusted outside of the outer plasma position by the voltage between the cathode and anode, which over the time t a to a Increase in the sputtering energy E leads outside .
  • the coating cycle is completed.
  • FIGS. 9a and 9b The influence of the location-dependent sputtering energy on the target 8 on the layer thickness is obtained by comparing FIGS. 9a and 9b.
  • the thickness of the layer 92 on the substrate is applied from the inside to the outside in the direction of the radius. Without the method according to the invention, a course of the layer thickness results, as shown in FIG. 9a. With the method according to the invention, the layer thickness can be largely homogenized, as can be seen in FIG. 9b.
  • the method according to the invention of the spatially dependent sputtering energy also has a very favorable effect on the target utilization and the conditioning of the target surface.
  • Fig. 10a shows that at a low sputtering energy at the edge of a target back coating can occur. This undesirable grain-like structures can occur.
  • Fig. 10b is shown that with the inventive migration of the plasma 92 over the target 8, a back coating is avoided at the edge.
  • a back coating 94 on the target can be prevented by setting the sputtering amount in a process cycle at least as large as the amount of backcoating.
  • the reactivity of the sputtering process depends on the power density at the target surface. With the same sputtering power, the power density is higher on a smaller target area than on a larger target area. If the power density is too high, the process becomes metallic, ie only the metallic target is atomized so that reactive sputtering does not occur. The power density must therefore be the corresponding Target surface to be adjusted. This is done according to the invention by suitable control of the magnetic coils and appropriate adjustment of the cathode / anode voltage.
  • the method according to the invention enables a high layer thickness uniformity even with a small target-substrate distance and with thick targets.
  • Fig. 11 shows a control loop with which, according to the invention, by measuring a substrate and its coating, the process parameters for the subsequent coating cycle (s) can be adjusted to control the layer thickness and the layer thickness uniformity.
  • a substrate 27 is fed to a control system 95, which carries out measurements of the layer thickness or the layer thickness distribution.
  • the result is reported to the computer 82, which compares this value with a setpoint, e.g. can be entered by an operator via the input 96.
  • the calculator calculates a slice thickness correction value if there is no match between the measured and set point.
  • the correction value is reported to a control unit 97, which controls the plasma power supply 98 and the magnetic field deflection 99 in order to readjust the layer thickness on the next substrate 27 to be coated in the sputtering system 100.
  • FIG. 12 a shows an example of a measuring arrangement for determining the layer thickness of cylindrically symmetrical substrates.
  • Three or more light-emitting diodes 101 are arranged above the layer 92.
  • Below the substrate 27 there are three or more photosensors 102 associated with the light emitting diodes. From the measured transmission of the light, which is the. Thickness of the layer 92 is inversely proportional to constant substrate thickness, then the layer thickness can be determined.
  • the measurement can also be done in reflection.
  • the inventive method has the advantage that a continuous adaptation of the coating, the target utilization and the target conditioning can be done.

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
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  • Metallurgy (AREA)
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  • Physical Vapour Deposition (AREA)
EP97953900A 1996-12-21 1997-12-22 Vorrichtung und verfahren zur kathodenzerstäubung Expired - Lifetime EP0946965B1 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
DE19654000 1996-12-21
DE19653999 1996-12-21
DE1996154000 DE19654000C1 (de) 1996-12-21 1996-12-21 Vorrichtung zur Kathodenzerstäubung
DE1996154007 DE19654007A1 (de) 1996-12-21 1996-12-21 Vorrichtung zur Kathodenzerstäubung
DE1996153999 DE19653999C1 (de) 1996-12-21 1996-12-21 Vorrichtung zur Kathodenzerstäubung
DE19654007 1996-12-21
PCT/EP1997/007225 WO1998028777A1 (de) 1996-12-21 1997-12-22 Vorrichtung und verfahren zur kathodenzerstäubung

Publications (2)

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EP0946965A1 EP0946965A1 (de) 1999-10-06
EP0946965B1 true EP0946965B1 (de) 2006-05-17

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EP97953901A Expired - Lifetime EP0946966B1 (de) 1996-12-21 1997-12-22 Vorrichtung zur kathodenzerstäubung
EP97953900A Expired - Lifetime EP0946965B1 (de) 1996-12-21 1997-12-22 Vorrichtung und verfahren zur kathodenzerstäubung

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US (2) US6338781B1 (enExample)
EP (2) EP0946966B1 (enExample)
JP (2) JP4422801B2 (enExample)
DE (2) DE59712656D1 (enExample)
WO (3) WO1998028778A1 (enExample)

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KR100421087B1 (ko) * 2001-12-31 2004-03-04 주식회사 엠피시스템 주차차량 자동 이송장치 및 방법
JP4470429B2 (ja) * 2002-09-30 2010-06-02 日本ビクター株式会社 マグネトロンスパッタリング装置
US7297247B2 (en) * 2003-05-06 2007-11-20 Applied Materials, Inc. Electroformed sputtering target
US7910218B2 (en) 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
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JP4422801B2 (ja) 2010-02-24
WO1998028777A1 (de) 1998-07-02
JP2001507078A (ja) 2001-05-29
DE59712307D1 (de) 2005-06-16
US6344114B1 (en) 2002-02-05
EP0946966B1 (de) 2005-05-11
US6338781B1 (en) 2002-01-15
EP0946966A1 (de) 1999-10-06
EP0946965A1 (de) 1999-10-06
WO1998028779A1 (de) 1998-07-02
WO1998028778A1 (de) 1998-07-02
JP4143131B2 (ja) 2008-09-03
JP2001507079A (ja) 2001-05-29
DE59712656D1 (de) 2006-06-22

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