JP4129041B2 - 熱伝導性の複合物品 - Google Patents
熱伝導性の複合物品 Download PDFInfo
- Publication number
- JP4129041B2 JP4129041B2 JP2007223937A JP2007223937A JP4129041B2 JP 4129041 B2 JP4129041 B2 JP 4129041B2 JP 2007223937 A JP2007223937 A JP 2007223937A JP 2007223937 A JP2007223937 A JP 2007223937A JP 4129041 B2 JP4129041 B2 JP 4129041B2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- thermally conductive
- composite article
- particles
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002131 composite material Substances 0.000 title claims description 29
- 239000000463 material Substances 0.000 claims description 79
- 229910052751 metal Inorganic materials 0.000 claims description 54
- 239000002184 metal Substances 0.000 claims description 54
- 239000002245 particle Substances 0.000 claims description 46
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 42
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 42
- 239000000843 powder Substances 0.000 claims description 17
- -1 polytetrafluoroethylene Polymers 0.000 claims description 16
- 229920000642 polymer Polymers 0.000 claims description 15
- 229920002379 silicone rubber Polymers 0.000 claims description 13
- 239000011324 bead Substances 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 9
- 239000000835 fiber Substances 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 8
- 229920001296 polysiloxane Polymers 0.000 claims description 8
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 7
- 239000013536 elastomeric material Substances 0.000 claims description 7
- 229910052582 BN Inorganic materials 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 4
- 239000006260 foam Substances 0.000 claims description 4
- 239000010445 mica Substances 0.000 claims description 4
- 229910052618 mica group Inorganic materials 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 239000004005 microsphere Substances 0.000 description 23
- 239000002243 precursor Substances 0.000 description 16
- 239000006185 dispersion Substances 0.000 description 12
- 229920001577 copolymer Polymers 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 239000000047 product Substances 0.000 description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 8
- 239000011162 core material Substances 0.000 description 8
- 239000000945 filler Substances 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
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- 239000011347 resin Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000012530 fluid Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910052500 inorganic mineral Inorganic materials 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000000314 lubricant Substances 0.000 description 5
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- 239000004332 silver Substances 0.000 description 5
- 235000015096 spirit Nutrition 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 229920001187 thermosetting polymer Polymers 0.000 description 5
- 239000004604 Blowing Agent Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- QWTDNUCVQCZILF-UHFFFAOYSA-N isopentane Chemical compound CCC(C)C QWTDNUCVQCZILF-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 3
- 229920001971 elastomer Polymers 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 239000008188 pellet Substances 0.000 description 3
- 239000004945 silicone rubber Substances 0.000 description 3
- OEPOKWHJYJXUGD-UHFFFAOYSA-N 2-(3-phenylmethoxyphenyl)-1,3-thiazole-4-carbaldehyde Chemical compound O=CC1=CSC(C=2C=C(OCC=3C=CC=CC=3)C=CC=2)=N1 OEPOKWHJYJXUGD-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- 229920006169 Perfluoroelastomer Polymers 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
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- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- AFABGHUZZDYHJO-UHFFFAOYSA-N dimethyl butane Natural products CCCC(C)C AFABGHUZZDYHJO-UHFFFAOYSA-N 0.000 description 2
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- 239000000806 elastomer Substances 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 229920001973 fluoroelastomer Polymers 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- NNPPMTNAJDCUHE-UHFFFAOYSA-N isobutane Chemical compound CC(C)C NNPPMTNAJDCUHE-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- CRSOQBOWXPBRES-UHFFFAOYSA-N neopentane Chemical compound CC(C)(C)C CRSOQBOWXPBRES-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- ISRGONDNXBCDBM-UHFFFAOYSA-N 2-chlorostyrene Chemical compound ClC1=CC=CC=C1C=C ISRGONDNXBCDBM-UHFFFAOYSA-N 0.000 description 1
- 239000004131 EU approved raising agent Substances 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229920000103 Expandable microsphere Polymers 0.000 description 1
- GYCMBHHDWRMZGG-UHFFFAOYSA-N Methylacrylonitrile Chemical compound CC(=C)C#N GYCMBHHDWRMZGG-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
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- 238000005520 cutting process Methods 0.000 description 1
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- 238000007580 dry-mixing Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- SUPCQIBBMFXVTL-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate Chemical compound CCOC(=O)C(C)=C SUPCQIBBMFXVTL-UHFFFAOYSA-N 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000004088 foaming agent Substances 0.000 description 1
- 235000010855 food raising agent Nutrition 0.000 description 1
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- 239000011256 inorganic filler Substances 0.000 description 1
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- 239000011810 insulating material Substances 0.000 description 1
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- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
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- 229920006395 saturated elastomer Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
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- 239000000758 substrate Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical compound FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C08K9/02—Ingredients treated with inorganic substances
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2300/00—Characterised by the use of unspecified polymers
- C08J2300/22—Thermoplastic resins
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2327/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Derivatives of such polymers
- C08J2327/02—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Derivatives of such polymers not modified by chemical after-treatment
- C08J2327/12—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
- C08J2327/18—Homopolymers or copolymers of tetrafluoroethylene
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2483/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L27/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers
- C08L27/02—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment
- C08L27/12—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
- C08L27/18—Homopolymers or copolymers or tetrafluoroethene
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/901—Printed circuit
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249971—Preformed hollow element-containing
- Y10T428/249972—Resin or rubber element
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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- Y10T428/249991—Synthetic resin or natural rubbers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T428/256—Heavy metal or aluminum or compound thereof
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- Y10T428/257—Iron oxide or aluminum oxide
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T428/258—Alkali metal or alkaline earth metal or compound thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T428/3154—Of fluorinated addition polymer from unsaturated monomers
- Y10T428/31544—Addition polymer is perhalogenated
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- Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
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Description
膨張後のサンプルを、ASTMのF36−88にしたがって100psiにて圧縮%を測定した。
前駆体材料の密度は、1インチ×6インチの型板を用いてサンプルを正確に1インチ×6インチに切断することにより得られた。次いでそのサンプルを0.01グラムの最小単位で秤量し、次のようにして密度を計算した。
ここで、M=最小単位0.01グラムでのサンプルの質量
V=体積(長さ×幅×厚さ)
である。
膨張%=(初期密度−最終密度)×100/初期密度
サンプルを2.25インチ平方に切断する。試験装置は2つの銅ブロックからなる。上のブロックは加熱され断熱される。下のブロックは循環水によって冷却される。試験装置は、試験装置に加えられるべき一定圧力を許容するフレームの中に据わる。試験装置は、ASTM5470−93の「薄い熱伝導性固体電気絶縁材料の熱伝導性の標準試験法」に記載の装置と同様に設計された。
ここで、k=熱伝導率 W/m・℃
Q=パワー W
t=サンプルの厚さ m
A=サンプルの面積 m2
ΔT=サンプルを貫く温度降下 ℃
である。
145.6gの窒化ホウ素(アドバンストセラミックス社から入手したタイプHCJ−48)と5.2gのEXPANCELタイプ091DUマイクロスフェアーを、1643gの脱イオン水の中でスラリーにした。次いでこのスラリーを206.7gのPTFE分散系(E.I.duPont de Nemours & Company社から入手したタイプTE3636)と共に凝固させた。次いでこの凝塊を90℃で16時間乾燥させ、−10℃で24時間冷凍し、次いで1/4インチのメッシュの金属スクリーンを通して手で篩にかけた。得られた粉末を1ポンドの凝塊あたり0.35ポンドの潤滑剤のレベルで潤滑した。潤滑剤は、75重量%のシリコーンエラストマー(ダウコーニング社から入手のSylgard(登録商標)タイプ1−4105)と25重量%のミネラルスピリットを含む混合物からなった。得られた材料を室温(約72°F)で24時間放置し、次いで直径1インチのペレットに予備成形し、厚さ約44ミル×幅2インチのテープに押出した。次いでこのテープを7ミルの厚さまで圧延した。次いでこの押出物のサンプルを100℃で5分間硬化させた。図3の横断面の顕微鏡写真を参照されたい。この工程は、シリコーンを硬化させてミネラルスピリットを除去するのに必要である。ここで、100℃はEXPANCELを活性化させるのに十分高くはない。このことは、押出物(又は膨張前)の特性を測定可能な材料を残存させる。次いで下記のデータが得られた。
密度=1.38g/cc
100psiでの圧縮%=0
ショアーA硬度=60
10psiでの熱伝導率=0.83W/m・℃
100psiでの熱伝導率=1.53W/m・℃
密度=0.53g/cc ⇒62%の膨張
100psiでの圧縮%=31.3%
ショアーA硬度=18
10psiでの熱伝導率=0.63W/m・℃
100psiでの熱伝導率=2.04W/m・℃
4.98ポンドの窒化アルミニウム(ART社から入手したタイプA500FXWR)と87gのEXPANCELタイプ091DUマイクロスフェアーを、10ガロンの容器内でイソプロピルアルコールと脱イオン水の中でスラリーにした。次いでこのスラリーを、固形分22.5%の6.12ポンドのPTFE分散系(E.I.duPont de Nemours & Company社から入手したタイプTE3636)と共に凝固させた。得られた凝塊を95℃で24時間乾燥させた。次いでこの凝塊を−10℃で24時間冷凍し、1/4インチのメッシュの金属スクリーンを通して手で篩にかけた。次いで得られた粉末を1ポンドの凝塊あたり0.25ポンドの潤滑剤のレベルで潤滑した。使用した潤滑剤は、75重量%のシリコーンエラストマー(ダウコーニング社から入手のSylgard(登録商標)タイプ1−4105)と25重量%のミネラルスピリットの混合物からなった。次いでこの材料を再度−10℃で4時間冷凍し、再度同じ1/4インチのメッシュスクリーンを通して篩にかけた。得られた粉末を室温(約72°F)で24時間放置し、次いで直径2.5インチのペレットに予備成形した。次いでこのペレットを、厚さ約150ミル×幅4インチのテープに押出した。次いでこのテープを103ミルに圧延し、150℃で5分間加熱した。このプロセスは、十分に浸透した硬化シリコーンエラストマーを含む多孔質PTFE複合体を生成した。得られた複合体は下記の特性を有した。
密度=0.91g/cc
100psiでの圧縮%=32.3%
ショアーA硬度=34
100psiでの熱抵抗=0.775℃/W
100psiでの熱伝導率=2.1W/m・℃
19.34ポンドの銀フレーク(テクニック社から入手したSILFLAKE450)、3.91ポンドの銀コーティングされたアルミニウム粉末(ノバメットスペシャルティプロダクツ社から入手)、及び0.374ポンドのEXPANCELタイプ091DUマイクロスフェアーを54.7リットルの脱イオン水と17.43リットルのイソプロピルアルコールと共にスラリーにした。次いでこのスラリーを固形分29.7%の17.33ポンドのPTFE分散系(E.I.duPont de Nemours & Company社から入手したタイプTE3636)と共に凝固させた。次いで得られた凝塊を90℃で22時間乾燥させ、−10℃で24時間冷凍し、次いで1/4インチのメッシュのスクリーンを通して手で篩にかけて粉末状にした。次いでこの材料を1ポンドの凝塊あたり0.20ポンドの潤滑剤のレベルで潤滑した。例2と同様にしてテープを作成し、但し、テープを7ミルの厚さに圧延した。このテープのサンプルを130℃に4分間加熱し、膨張と硬化を起こさせた。下記の特性が測定された。
密度=1.02g/cc
ショアーA硬度=21
100psiでの圧縮%=36.1%
100psiでの電気抵抗率=0.008Ω・cm
100psiでの熱伝導率=2.18W/m・℃
12 ヒートシンク
14 集積回路
22 境界材
24 ヒートシンク
26 電子部品
Claims (7)
- 熱伝導性粒子、及び非電気伝導性でエネルギーにより膨張可能な中空ポリマー粒子を含み、ポリテトラフルオロエチレンのマトリックスを有し、かつ電子部品とヒートシンクの間の熱境界材として用いられることを特徴とする熱伝導性で非電気伝導性の複合物品。
- 熱伝導性粒子が、金属、金属酸化物、金属粉末、金属ビーズ、金属繊維、金属コーティングされた繊維、金属フレーク、金属コーティングされた金属、金属コーティングされたセラミック、金属コーティングされたガラス気泡体、金属コーティングされたガラスビーズ、金属コーティングされたマイカフレーク、窒化ホウ素、窒化アルミニウム、ダイヤモンド粉末、及び炭化ケイ素から本質的になる群より選択された請求項1に記載の複合物品。
- 不連続な状態で複合物品の中に配置されたシリコーンエラストマー材料をさらに含む請求項1に記載の複合物品。
- 熱伝導性粒子、非電気伝導性でエネルギーにより膨張可能な中空ポリマー粒子、及び不連続な状態で複合物品の中に配置されたエラストマー材料を含み、ポリテトラフルオロエチレンのマトリックスを有し、かつ電子部品とヒートシンクの間の熱境界材として用いられることを特徴とする熱伝導性で非電気伝導性の複合物品。
- 熱伝導性粒子が、金属、金属ビーズ、金属粉末、金属繊維、金属コーティングされた繊維、金属フレーク、金属コーティングされた金属、金属コーティングされたセラミック、金属コーティングされたガラス気泡体、金属コーティングされたガラスビーズ、金属コーティングされたマイカフレーク、及び非電気伝導性で熱伝導性の材料から本質的になる群より選択された請求項4に記載の複合物品。
- 35未満のショアーA硬度を有する請求項4に記載の複合物品。
- エラストマー材料がシリコーンエラストマー材料である請求項4に記載の複合物品。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/671,560 US5738936A (en) | 1996-06-27 | 1996-06-27 | Thermally conductive polytetrafluoroethylene article |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9184626A Division JPH1060206A (ja) | 1996-06-27 | 1997-06-26 | 熱伝導性のポリテトラフルオロエチレン物品 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008045132A JP2008045132A (ja) | 2008-02-28 |
JP4129041B2 true JP4129041B2 (ja) | 2008-07-30 |
Family
ID=24695001
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9184626A Withdrawn JPH1060206A (ja) | 1996-06-27 | 1997-06-26 | 熱伝導性のポリテトラフルオロエチレン物品 |
JP2007223937A Expired - Lifetime JP4129041B2 (ja) | 1996-06-27 | 2007-08-30 | 熱伝導性の複合物品 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9184626A Withdrawn JPH1060206A (ja) | 1996-06-27 | 1997-06-26 | 熱伝導性のポリテトラフルオロエチレン物品 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5738936A (ja) |
EP (2) | EP0816423B1 (ja) |
JP (2) | JPH1060206A (ja) |
KR (1) | KR100517421B1 (ja) |
DE (1) | DE69739082D1 (ja) |
Families Citing this family (100)
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US5945217A (en) * | 1997-10-14 | 1999-08-31 | Gore Enterprise Holdings, Inc. | Thermally conductive polytrafluoroethylene article |
US6498390B1 (en) * | 1998-09-16 | 2002-12-24 | Intel Corporation | Integrated circuit package that includes a thermally conductive tape which attaches a thermal element to a plastic housing |
DE19924289A1 (de) * | 1999-05-27 | 2000-12-07 | Siemens Ag | Elektronisches Schaltungsmodul mit flexibler Zwischenschicht zwischen elektronischen Bauelementen und einem Kühlkörper |
US6947293B2 (en) * | 1999-07-15 | 2005-09-20 | Incep Technologies | Method and apparatus for providing power to a microprocessor with integrated thermal and EMI management |
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US20030156400A1 (en) * | 1999-07-15 | 2003-08-21 | Dibene Joseph Ted | Method and apparatus for providing power to a microprocessor with intergrated thermal and EMI management |
US6801431B2 (en) * | 1999-07-15 | 2004-10-05 | Incep Technologies, Inc. | Integrated power delivery and cooling system for high power microprocessors |
US6847529B2 (en) * | 1999-07-15 | 2005-01-25 | Incep Technologies, Inc. | Ultra-low impedance power interconnection system for electronic packages |
US20030214800A1 (en) * | 1999-07-15 | 2003-11-20 | Dibene Joseph Ted | System and method for processor power delivery and thermal management |
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US7027304B2 (en) * | 2001-02-15 | 2006-04-11 | Integral Technologies, Inc. | Low cost thermal management device or heat sink manufactured from conductive loaded resin-based materials |
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WO2002088234A1 (en) * | 2001-04-30 | 2002-11-07 | Saint-Gobain Ceramics And Plastics , Inc. | Polymer processing aid and method for processing polymers |
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-
1996
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1997
- 1997-06-25 EP EP97304490A patent/EP0816423B1/en not_active Expired - Lifetime
- 1997-06-25 EP EP06025013.1A patent/EP1792938B8/en not_active Expired - Lifetime
- 1997-06-25 DE DE69739082T patent/DE69739082D1/de not_active Expired - Lifetime
- 1997-06-26 JP JP9184626A patent/JPH1060206A/ja not_active Withdrawn
- 1997-06-27 KR KR1019970027956A patent/KR100517421B1/ko not_active IP Right Cessation
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JPH1060206A (ja) | 1998-03-03 |
EP0816423B1 (en) | 2008-11-05 |
US5738936A (en) | 1998-04-14 |
EP1792938B8 (en) | 2015-01-28 |
EP1792938B1 (en) | 2014-08-13 |
KR100517421B1 (ko) | 2006-03-14 |
EP0816423A1 (en) | 1998-01-07 |
EP1792938A2 (en) | 2007-06-06 |
JP2008045132A (ja) | 2008-02-28 |
KR980002120A (ko) | 1998-03-30 |
DE69739082D1 (de) | 2008-12-18 |
EP1792938A3 (en) | 2010-09-29 |
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